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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Allegro MicroSystems, LLC |
IC GATE DRVR HIGH-SIDE 16TSSOP |
в производстве | High-Side | 3-Phase | 3 | N-Channel MOSFET | 4.5 V ~ 50 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-TSSOP (0.173", 4.40mm Width) Exposed Pad | 16-TSSOP-EP |
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Texas Instruments |
IC DUAL PERIPHERAL DRIVER 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL PERIPHERAL DRIVER 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL PERIPHERAL DRIVER 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC INVERTING FET DRVR SOT-23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC MOSFET DRIVR DUAL HS 4A 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 25 V | - | 4A, 9A | Non-Inverting | - | 77ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Texas Instruments |
IC PERIPHERAL DRVR DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 600V 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
5-AMP DUAL LOW-SIDE MOSFET DRIVE |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLERSO-7TR |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 20 V | - | 2A, 5A | - | - | 695ns, 131ns | -50°C ~ 150°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width), 7 Leads | 7-SO |
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Microchip Technology |
IC DRIVER MOSFET DUAL 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET DUAL 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DGTL CTRL MOSFET DVR 14HTSSOP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.25 V ~ 15 V | 1.16V, 2.08V | 4A, 4A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 105°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-HTSSOP |
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Analog Devices Inc. |
IC MOSFET DVR 2A DL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 9.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR 2CH LOW SIDE 8MSOP |
устарелый | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Infineon Technologies |
IC MFET DRVR HIGH SIDE 8SOIC |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 6 V ~ 36 V | 0.9V, 2.7V | - | Non-Inverting | - | 1µs, 1µs | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER 1CHANNEL 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC HS MOSFET DRIVER SOT23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Microchip Technology |
IC DRIVER MOSFET 6A LOSIDE 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC SYNC MOSFET DVR 4A 8SON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 8.8 V | - | - | Non-Inverting | 33V | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC MOSFET DRVR SYNC 8WSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 2.65V | - | Non-Inverting | 34V | 30ns, 8ns | -40°C ~ 105°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-WSON (2x2) |
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Texas Instruments |
IC DUAL MOSFET DRIVER 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.75 V ~ 5.25 V, 4.75 V ~ 24 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | - | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLER SO-7 TR |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 20 V | - | 2A, 5A | - | - | 695ns, 131ns | -50°C ~ 150°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width), 7 Leads | 7-SO |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRVR DUAL INVERT 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
IC DRIVER HALF BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 14.6 V ~ 16.6 V | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
IC IGBT DVR 1200V DSO14 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 13 V ~ 18 V | 1.5V, 3.5V | - | - | 1200V | 50ns, 90ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | PG-DSO-14 |
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Texas Instruments |
IC GATE DRVR IGBT/MOSFET SOT23-5 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
