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Infineon Technologies |
IC GATE DRVR 8DSO |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF-BRIDGE SHTDN 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DRVR DSO28 |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 13 V ~ 17.5 V | 1.1V, 1.7V | - | Non-Inverting | 600V | 60ns, 26ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | PG-DSO-28 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 600V | 200ns, 100ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR HALF BRDG SELF-OSC 8-DIP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC MOSFET DRIVER HIGH-SIDE 8-DIP |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8-DIP |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER 600V 200/420MA 8-DIP |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC GATE DRIVER HV 3PHASE 28-SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 600V 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER MOSFET/IGBT 1CH 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRVR SELF-OSC HALF BRG 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.4 V | - | 180mA, 260mA | RC Input Circuit | 600V | 120ns, 50ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC MOSFET/IGBT DVR HV HS 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC GATE DRIVER 8VDSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 8 V | 0.8V, 2.5V | 2A, 2A | Non-Inverting | 30V | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | PG-VDSON-8 |
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Infineon Technologies |
IC MOSFET GATE DRIVER 10DFN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | - | 3A, 4A | Non-Inverting | - | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-VDFN Exposed Pad | 10-DFN (3x3) |
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Infineon Technologies |
DRIVER IC |
в производстве | Half-Bridge, Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | PG-SOT23-6-2 |
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Infineon Technologies |
IC GATE DRIVER 8WSON |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | PG-WSON-8-1 |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER FULL SELF OSC 14-SOIC |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10 V ~ 15.6 V | 4.7V, 9.3V | 180mA, 260mA | RC Input Circuit | 600V | 120ns, 50ns | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 200V 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IRHSS-LSS-GATEDRIVER |
в производстве | High-Side | - | 1 | - | 3 V ~ 36 V | 0.8V, 2.5V | - | - | - | 6µs, 6µs | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
IC DVR LOW SIDE 25V 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 600V 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.4 V | - | 180mA, 260mA | RC Input Circuit | 600V | 120ns, 50ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER N-BRIDGE 24SSOP |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 7 V ~ 34 V | 1V, 2V | - | Inverting, Non-Inverting | 55V | 250ns, 200ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 24-LSSOP (0.154", 3.90mm Width) Exposed Pad | PG-SSOP-24-4 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | - | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER CUR SENSE 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HI/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC MOSFET DRIVER LOW SIDE 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 18 V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | - | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-DIP |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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Infineon Technologies |
IC GATE DRIVER 1CH 200V SOT23 |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 10 V ~ 18 V | 0.8V, 2.2V | 160mA, 240mA | Non-Inverting | 200V | 85ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Infineon Technologies |
IC GATE DRIVER 1CH 100V SOT23 |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 10 V ~ 18 V | 0.8V, 2.2V | 160mA, 240mA | Non-Inverting | 100V | 85ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
