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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HALF BRIDGE HV HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DRVR LOW SIDE SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 5 V ~ 18 V | 0.6V, 2.7V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF-BRIDGE SHTDN 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DVR LOW SIDE 1CH 6WSOP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | PG-WSON-6-1 |
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Infineon Technologies |
DRIVER IC |
в производстве | Half-Bridge, Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | PG-SOT23-6-2 |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 700V | 200ns, 100ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 600V | 200ns, 100ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 700V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HALF BRIDG SELF OSC 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.4 V | - | 180mA, 260mA | RC Input Circuit | 600V | 120ns, 50ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DRIVER 8TSSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.3V | 4A, 4A | Non-Inverting | - | 6.4ns, 5.4ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | PG-TSSOP-8 |
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Infineon Technologies |
IC GATE DRVR 8TSSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | PG-TSSLP-8 |
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Infineon Technologies |
IC GATE DRIVER DSO8 |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.3V | 4A, 4A | Non-Inverting | - | 6.4ns, 5.4ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-60 |
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Infineon Technologies |
IC GATE DRIVER 8WSON |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | PG-WSON-8-1 |
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Infineon Technologies |
IC GATE DRVR 8TSSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | PG-TSSOP-8 |
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Infineon Technologies |
IC GATE DRVR 8DSO |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
IC GATE DRVR 8DSO |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
IC GATE DRVR 8TSSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | PG-TSSOP-8 |
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Infineon Technologies |
IC MOSFET IGBT DRIVER 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER GATE HALF BRIDGE 14DSO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 25 V | 1.1V, 1.7V | - | Non-Inverting | 600V | 48ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-DSO |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 700V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 220mA, 480mA | Non-Inverting | 600V | 85ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER SGL CHAN 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.5V | 1A, 1A | Inverting | 200V | 25ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER SGL CHAN 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC SMART SECONDARY DRIVER 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 12 V ~ 18 V | 2V, 2.15V | 2A, 7A | Non-Inverting | - | 18ns, 10ns | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC |
устарелый | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.5V | 2A, 2A | Non-Inverting | 200V | 22ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC SMART SECONDARY DRIVER 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 12 V ~ 18 V | 2V, 2.15V | 2A, 7A | Non-Inverting | - | 18ns, 10ns | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER CURR SENSE 1CHAN 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRVR N-CH DUAL 16QFN |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | - | Non-Inverting | - | 15ns, 12ns | 0°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-VFQFN Exposed Pad | 16-QFN (3x3) |
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Infineon Technologies |
IC GATE DRVR 600V 3PHASE 28TSSOP |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 13 V ~ 17.5 V | 1.1V, 1.7V | - | Inverting | 620V | 60ns, 26ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 28-TSSOP (0.173", 4.40mm Width) | PG-TSSOP-28 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 14-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC GATE DRVR 200V 3PHASE 28TSSOP |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 17.5 V | 1.1V, 1.7V | - | Non-Inverting | 200V | 60ns, 26ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 28-TSSOP (0.173", 4.40mm Width) | PG-TSSOP-28 |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 28DSO |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 13 V ~ 17.5 V | 1.1V, 1.7V | - | Non-Inverting | 600V | 60ns, 26ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | PG-DSO-28-17 |
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Infineon Technologies |
IC GATE DRVR DSO28 |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 13 V ~ 17.5 V | 1.1V, 1.7V | - | Inverting | 620V | 60ns, 26ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | PG-DSO-28 |
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Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC DRIVER N-BRIDGE 24SSOP |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 7 V ~ 34 V | 1V, 2V | - | Non-Inverting | 55V | 250ns, 200ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 24-LSSOP (0.154", 3.90mm Width) Exposed Pad | PG-SSOP-24 |
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Infineon Technologies |
IC DRIVER IGBT DSO18 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 14 V ~ 18 V | 0.8V, 2V | 1A, 2A | Inverting | 650V | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width), 18 Leads | PG-DSO-18-2 |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC GATE DRIVE AUTOMOTIVE 28SOIC |
устарелый | Half-Bridge | 3-Phase | 6 | N-Channel MOSFET | 24 V ~ 150 V | 0.7V, 2.5V | 200mA, 350mA | Non-Inverting | 200V | 100ns, 35ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC GATE DRIVER HV 3PHASE 28-SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 28MLPQ |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-VFQFN Exposed Pad | 28-MLPQ (5x5) |
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Infineon Technologies |
IC DVR HI/LO SIDE 16-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 6V, 9.5V | 2A, 2.5A | Non-Inverting | 1200V | 25ns, 17ns | 125°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
