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Infineon Technologies |
DRIVER IC |
в производстве | - | - | - | - | - | - | 4A, 8A | - | - | - | - | SMD Поверхностный монтаж | 13-TFLGA | PG-TFLGA-13-1 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC BUCK SYNC DRIVER DL TDSON10 |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 8 V | 0.8V, 2.5V | 2A, 2A | Non-Inverting | 30V | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-VFDFN Exposed Pad | 10-TDSON (3x3) |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 200V 8-SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
LEVEL SHIFT JUNCTION ISO |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8DSO |
в производстве | Half-Bridge | Independent | 2 | IGBT | 10 V ~ 20 V | 1.1V, 1.7V | 500mA, 500mA | Non-Inverting | 600V | 48ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
IC DVR CURR SENSE 1CH 600V 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DUAL MOSFET IGBT 8SO |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
DRIVER IC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 5A, 5A | Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | PG-WSON-8-1 |
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Infineon Technologies |
DRIVER IC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | PG-WSON-8-1 |
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Infineon Technologies |
IC MOSFET IGBT 20V |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 700V | 200ns, 100ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH SIDE SGL 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Inverting | 600V | 75ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HI/LOW SIDE 600V 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH SIDE SGL 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
HVIC |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
HVIC |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC MOSFET DRIVER 200V 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 11.4 V ~ 18 V | 2V, 2.15V | 1A, 4A | Non-Inverting | - | 21ns, 10ns | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET IGBT 20V |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 200mA, 350mA | Non-Inverting | 700V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HALF BRIDGE 14-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DUAL MOSFET IGBT 8-DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 11.2 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16MLPQ |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-VFQFN Exposed Pad | 16-MLPQ (4x4) |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 16MLPQ |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-VFQFN Exposed Pad, 14 Leads | 16-MLPQ (4x4) |
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Infineon Technologies |
IC HALF BRIDGE SELF OSC 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | 180mA, 260mA | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IS Regulators Controller FLYBCK Power Management 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 11 V ~ 19 V | 2V, 2.25V | 1A, 4A | Inverting | - | 20ns, 10ns | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HALF BRIDGE 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR LOW SIDE 25V 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET GATE DRIVER 16MLPQ |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 7 V | - | -, 4A | Non-Inverting | - | - | - | SMD Поверхностный монтаж | 16-VFQFN Exposed Pad | 16-MLPQ (3x3) |
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Infineon Technologies |
IC DVR HALF BRDG SELF-OSC 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 600V | 200ns, 100ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting | 600V | 15ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 11.2 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting | 600V | 15ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
