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Texas Instruments |
LMG1020YFFR BEARCAT 6-PIN WCSP |
в производстве | Low-Side | Independent | 1 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 1.8V, 1.7V | 7A, 5A | Inverting, Non-Inverting | - | 375ps, 350ps | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-UFBGA, DSBGA | 6-DSBGA (1.2x0.8) |
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Texas Instruments |
IC PRED SYNCH BUCK DRVR 14HTSSOP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 3.7 V ~ 20 V | 1.55V, 2.25V | 4A, 4A | Non-Inverting | - | 17ns, 17ns | -55°C ~ 115°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-HTSSOP |
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Texas Instruments |
IC MOSFET DRIVER SYNC 8WSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 2.65V | - | Non-Inverting | 35V | 30ns, 8ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-WSON (2x2) |
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Texas Instruments |
IC SYNC BUCK DRVR HS 14-HTSSOP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 3.7 V ~ 20 V | 0.7V, 2.6V | 4A, 4A | Non-Inverting | - | 17ns, 17ns | -55°C ~ 115°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-HTSSOP |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL CH POWER DRIVER 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 40ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC DUAL CH POWER DRIVER 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 40ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC DUAL CHAN POWER DRIVER 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 40ns | -25°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC COMPLEMENTARY POWER DRVR 8-DIP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 60ns, 60ns | -25°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC NON-INVERT POWER DRIVER 16-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 35 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8CDIP |
в производстве | Low-Side | Independent | 2 | - | 4.5 V ~ 5.5 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | -50°C ~ 150°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CDIP |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 8A | Inverting, Non-Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC GATE DVR FET/IGBT SOT23-5 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Inverting, Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC POWER DRIVER 6SON |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 1.08V, 1.93V | 4A, 6A | Inverting | - | 4ns, 3.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-SON (3x3) |
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Texas Instruments |
IC DVR HALF-BRIDGE 90V 1A 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRIVER DUAL 5A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL HS FET DRIVER 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
620-V 1.8-A 2.8-A HIGH-SIDE LO |
в производстве | High-Side or Low-Side | Synchronous | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.4V | 1.8A, 2.8A | - | 700V | 16ns, 10ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC HS POWER DRIVER 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 60ns, 60ns | -25°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRIVER 8-DIP |
в производстве | Low-Side | Independent | 2 | - | 4.5 V ~ 5.5 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 50ns, 90ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8SON |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
IC PERIPHERAL DRVR DUAL HV 8-DIP |
в производстве | Low-Side | Independent | 2 | - | 4.5 V ~ 5.5 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 50ns, 90ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC GATE DRVR IGBT/MOSFET SOT23-5 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 2.5A | Inverting | - | 15ns, 10ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC INVERTING FET DRVR SOT23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC DVR HALF-BRIDGE 100V 1A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER DUAL 5A NEG VOUT 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER DUAL 5A NEG VOUT 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS FET DRIVER 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting, Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LOSIDE DUAL 5A 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DRVR LOW SIDE DL 8MSOP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL 2A MOSFET DRIVER 8-DIP |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting, Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER GATE DUAL 5A 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC GATE DRIVER FET/IGBT 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
