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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 1A, 1A | Non-Inverting | 118V | 990ns, 715ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HIGH SPD FET DRVR 8-DIP |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | - | 4.5 V ~ 5.5 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 50ns, 90ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting, Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 8MSOP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC DUAL 2A INV FET DRIVER 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR HI/LO SIDE 3A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 100V | 430ns, 260ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC QUAD MOSFET DRIVER 16-SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel MOSFET | 4.75 V ~ 28 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Texas Instruments |
IC DRIVER MOSFET 3A 8MSOP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.3V | 3A, 7A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
SINGLE DRIVER |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 8A | Inverting, Non-Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8SON |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting, Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8SON |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting, Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
700V GATE DRIVER- 0.5A/1A PEAK C |
в производстве | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2V | 500mA, 1A | - | 600V | 35ns, 16ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET GATE DRIVER 7A 8MSOP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.3V | 3A, 7A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC DVR HALF-BRIDGE 100V 1A 8WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC MOSFET GATE DVR TINY 7A 6WSON |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.3V | 3A, 7A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-WSON (3x3) |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH 6SON |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 4A | Inverting, Non-Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-SON-EP (3x3) |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | - | 4A, 4A | Inverting | - | 8ns, 7ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC MOSFET DRIVER DUAL 5A 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC HS MOSFET DRIVER SOT-23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | - | 4A, 4A | Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC MOSFET DRIVER DUAL 5A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR 7.6A LOSIDE SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC GATE DVR 7.6A LOW SIDE 6WQFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 4.5A, 7.6A | Inverting, Non-Inverting | - | 3ns, 2ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-WSON (3x3) |
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Texas Instruments |
IC GATE DVR 7.6A LOSIDE SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8MSOP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting, Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC 2A HS MOSFET DRIVER SOT23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC SINK SYNC MOSFET DVR 4A 8SON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8 V ~ 8.8 V | - | - | Non-Inverting | 33V | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
IC HS MOSFET DRIVER SOT-23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | - | 2A, 2A | Non-Inverting | 34V | 14ns, 14ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC DRIVER MOSFET 3A 8MSOP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.3V | 3A, 7A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC GATE DRIVER HALF BRIDGE 8WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC DUAL HS MOSFET DRVR 8-TSSOP |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 8MSOP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC NONINVERT FET DRVR SOT-23-5 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Texas Instruments |
IC DUAL HS POWER FET DRIVR 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER GATE DUAL 5A 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DRVR DUAL HS 4A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DVR DUAL HS 4A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC Controller Power Management CURRENT 8TSSOP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 6 V ~ 15 V | 1.3V, 1.65V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Texas Instruments |
IC GATE DVR LOW SIDE 8SON |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-SON (3x3) |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC DUAL 2A NAND FET DRVR 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS POWER FET DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LOW SIDE DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DVR DUAL 4A HS 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
