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Texas Instruments |
IC SYNC BUCK FET DRIVER 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 2.7A, 2.4A | Non-Inverting | 28V | 50ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC DRIVER PRE FET 6 CHAN 28-SSOP |
в производстве | Low-Side | Independent | 6 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1.2mA, 1.2mA | Non-Inverting | - | 3.5µs, 3µs | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SSOP (0.209", 5.30mm Width) | 28-SSOP |
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Texas Instruments |
IC DUAL HIGH SPD FET DRVR 8-DIP |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DVR SYNC 4.5A HS 8WSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.85 V | - | 3A, 4.5A | Non-Inverting | 33V | 17ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC MOSFET DVR SYNC 4.5A HS 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.85 V | - | 3A, 4.5A | Non-Inverting | 33V | 17ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL HS MOSFET DRVR 8-TSSOP |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH 6WSON |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 8A | Inverting, Non-Inverting | - | 8ns, 7ns | -55°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-SON (3x3) |
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Texas Instruments |
IC SYNC BUCK FET DRIVER 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 2.7A, 2.4A | Non-Inverting | 28V | 50ns, 50ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC SYNC BUCK FET DRIVER 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 2.7A, 2.4A | Inverting | 28V | 50ns, 50ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC DRIVER HALF-BRIDGE HV 10WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 118V | 570ns, 430ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 118V | 570ns, 430ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC GATE DVR HI/LO SIDE 2A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 100V | 570ns, 430ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC SYNC BUCK FET DRIVER 14-SOIC |
в производстве | High-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 2.7A, 2.4A | Inverting | 28V | 50ns, 50ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Texas Instruments |
IC COMPLEMENT SW FET DRVR 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 7 V ~ 20 V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC COMPLEMENT SW FET DRVR 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 7 V ~ 20 V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR HI/LO SIDE 1A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 1A, 1A | Non-Inverting | 100V | 990ns, 715ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC HIGH CURRENT FET DRVR 16-SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.7 V ~ 18 V | 0.8V, 2V | 6A, 6A | Inverting, Non-Inverting | - | 85ns, 85ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC COMPLEMENTARY POWER DRVR 16-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 40ns | -25°C ~ 85°C (TA) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 8A | Inverting, Non-Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
MOSFET DRVR 5A DUAL LOSIDE 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.3A, 1.4A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 4A 8VSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 1.3V, 2.7V | 4A, 4A | Non-Inverting | 120V | 7.2ns, 5.5ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-VSON (4x4) |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 4A 8VSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 1.3V, 2.7V | 4A, 4A | Non-Inverting | 120V | 7.2ns, 5.5ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-VSON (4x4) |
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Texas Instruments |
IC GATE DRVR HALF-BRIDGE 12DSBGA |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1.2A, 5A | Non-Inverting | 100V | 7ns, 3.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 12-WFBGA, DSBGA | 12-DSBGA |
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Texas Instruments |
IC MOSFET DRIVER DUAL 5A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5 V ~ 14 V | 0.8V, 2.2V | 3A, 5A | Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Inverting, Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC HS MOSFET DRIVER 16-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 40ns, 30ns | 0°C ~ 70°C (TA) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Texas Instruments |
IC GATE DRIVER HALF 1A 8WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC DUAL NON-INV POWER DRVR 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 35 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 25ns, 25ns | -25°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC DUAL HS FET DRIVER 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 40 V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -55°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC HIGH CURRENT FET DRVR TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.7 V ~ 18 V | 0.8V, 2V | 6A, 6A | Inverting, Non-Inverting | - | 85ns, 85ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Texas Instruments |
IC DUAL NON-INV POWER DRVR 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 35 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 25ns, 25ns | -25°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DVR LOW SIDE 7.6A SOT23- |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10-MSOP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.2A, 1.8A | Non-Inverting | 118V | 15ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-VSSOP |
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Texas Instruments |
LMG1205YFXT |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1.76V, 1.89V | 1.2A, 5A | TTL | 100V | 7ns, 3.5ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 12-WFBGA, DSBGA | 12-DSBGA |
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Texas Instruments |
LMG1020YFFR BEARCAT 6-PIN WCSP |
в производстве | Low-Side | Independent | 1 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 1.8V, 1.7V | 7A, 5A | Inverting, Non-Inverting | - | 375ps, 350ps | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 6-UFBGA, DSBGA | 6-DSBGA (1.2x0.8) |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8SO |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8SO |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | - | 4.5 V ~ 5.5 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 50ns, 90ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC PERIPHERAL DRVR DUAL HS 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
