номер части Производитель / Марка Краткое описание Статус деталиТип диодаНапряжение - Реверс постоянного тока (Vr) (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслискоростьВремя обратного восстановления (trr)Текущий - обратный утечек @ VrЕмкость @ Vr, FТип монтажаУпаковка / чехолПакет устройств поставщикаРабочая температура - Соединение
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 40A DO203AB в производствеStandard200V40A1.3V @ 125AStandard Recovery >500ns, > 200mA (Io)
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9mA @ 200V
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB-65°C ~ 190°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO220AC в производствеStandard1200V20A1.31V @ 20AFast Recovery =< 500ns, > 200mA (Io)400ns100µA @ 1200V
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Through HoleTO-220-2TO-220AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 15V 65A TO247AC в производствеSchottky15V65A500mV @ 65AFast Recovery =< 500ns, > 200mA (Io)
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18mA @ 15V
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Through HoleTO-247-3TO-247AC-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 20A TO220FP в производствеStandard600V20A1.67V @ 60AFast Recovery =< 500ns, > 200mA (Io)160ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220-2 Full Pack-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 15V 40A TO247AC в производствеSchottky15V40A520mV @ 40AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 15V2000pF @ 5V, 1MHzThrough HoleTO-247-3TO-247AC-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 30A TO247AC в производствеStandard600V30A1.41V @ 30AFast Recovery =< 500ns, > 200mA (Io)160ns100µA @ 600V
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Through HoleTO-247-3TO-247AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 30A TO247 в производствеStandard1000V30A1.41V @ 30AFast Recovery =< 500ns, > 200mA (Io)450ns100µA @ 1000V
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Through HoleTO-247-3TO-247AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 30A TO247AC в производствеStandard1200V30A1.41V @ 30AFast Recovery =< 500ns, > 200mA (Io)450ns100µA @ 1200V
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Through HoleTO-247-3TO-247AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 60A TO247AC в производствеStandard600V60A1.3V @ 60AFast Recovery =< 500ns, > 200mA (Io)180ns100µA @ 600V
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Through HoleTO-247-2TO-247AC Modified-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.6KV 40A TO247AC в производствеStandard1600V40A1.14V @ 40AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 1600V
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Through HoleTO-247-2TO-247AC Modified-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 60A TO247AC в производствеStandard800V60A1.09V @ 60AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 800V
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Through HoleTO-247-2TO-247AC Modified-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 60A TO247AC в производствеStandard1200V60A1.4V @ 60AFast Recovery =< 500ns, > 200mA (Io)480ns100µA @ 1200V
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Through HoleTO-247-2TO-247AC Modified-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 60A TO247AC в производствеStandard400V60A1.3V @ 60AFast Recovery =< 500ns, > 200mA (Io)180ns100µA @ 400V
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Through HoleTO-247-2TO-247AC Modified-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 60A TO247AC в производствеStandard400V60A1.3V @ 60AFast Recovery =< 500ns, > 200mA (Io)180ns100µA @ 400V
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Through HoleTO-247-3TO-247AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 85A DO203AB в производствеStandard600V85A1.75V @ 266.9AFast Recovery =< 500ns, > 200mA (Io)500ns100µA @ 600V
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB-40°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 150MA DO35 в производствеStandard50V150mA1V @ 50mASmall Signal =< 200mA (Io), Any Speed4ns50nA @ 50V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 25V 150MA DO35 в производствеStandard25V150mA1V @ 30mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 25V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 300MA DO35 в производствеStandard100V300mA1V @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns5µA @ 75V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 25V 150MA DO35 в производствеStandard25V150mA1V @ 30mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 25V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 25V 300MA DO35 в производствеStandard25V300mA (DC)1V @ 30mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 25V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 250MA DO35 в производствеStandard100V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 100V1.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 2A DO35 в производствеStandard75V2A1V @ 10mAFast Recovery =< 500ns, > 200mA (Io)8ns5µA @ 75V
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Through HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 250MA DO35 в производствеStandard150V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 150V1.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 250MA DO35 в производствеStandard150V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 150V1.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 150MA DO35 в производствеStandard50V150mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V2.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 250MA SOD80 в производствеStandard100V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 100V1.5pF @ 0V, 1MHzSMD Поверхностный монтажDO-213AC, MINI-MELF, SOD-80SOD-80 MiniMELF175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 60V 600MA DO35 в производствеStandard60V600mA (DC)1.25V @ 400mAFast Recovery =< 500ns, > 200mA (Io)6ns100nA @ 60V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 60V 600MA DO35 в производствеStandard60V600mA (DC)1.25V @ 400mAFast Recovery =< 500ns, > 200mA (Io)6ns100nA @ 60V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 200MA SOD123 в производствеStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V2.5pF @ 0V, 1MHzSMD Поверхностный монтажSOD-123SOD-123-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 250MA SOD80 в производствеStandard100V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 100V1.5pF @ 0V, 1MHzSMD Поверхностный монтажDO-213AC, MINI-MELF, SOD-80SOD-80 MiniMELF175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 250MA SOD80 в производствеStandard150V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 150V1.5pF @ 0V, 1MHzSMD Поверхностный монтажSOD-80 VariantSOD-80 QuadroMELF150°C (Max)
Vishay Semiconductor Diodes Division DIODE GP 50V 250MA MICROMELF в производствеStandard50V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 50V1.5pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, No LeadMicroMELF175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 150MA SOT23 в производствеStandard75V150mA1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed6ns1µA @ 75V4pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL в производствеStandard50V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)200ns5µA @ 50V12pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AL в производствеStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V12pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AL в производствеStandard200V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)200ns5µA @ 200V12pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GP 200V 250MA MICROMELF в производствеStandard200V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 200V1.5pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, No LeadMicroMELF175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 250MA SOD323 в производствеStandard75V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)6ns1µA @ 75V2pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323SOD-323-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 150MA SOD323 в производствеStandard50V150mA1V @ 50mASmall Signal =< 200mA (Io), Any Speed4ns50nA @ 50V
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SMD Поверхностный монтажSC-76, SOD-323SOD-323-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 250MA SOD123 в производствеStandard75V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)6ns1µA @ 75V2pF @ 0V, 1MHzSMD Поверхностный монтажSOD-123SOD-123-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO204AL в производствеStandard1000V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V12pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 60V 200MA DO35 в производствеStandard60V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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1nA @ 30V3pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 30MA DO35 в производствеSchottky60V30mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed
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200nA @ 60V1.6pF @ 1V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35125°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 200MA SOD123 в производствеStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V2.5pF @ 0V, 1MHzSMD Поверхностный монтажSOD-123SOD-123-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 150MA SOD123 в производствеStandard75V150mA720mV @ 5mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V
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SMD Поверхностный монтажSOD-123SOD-123-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 250MA SOD123 в производствеStandard75V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)6ns1µA @ 75V2pF @ 0V, 1MHzSMD Поверхностный монтажSOD-123SOD-123-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V DO35 в производствеSchottky60V30mA1V @ 15mASmall Signal =< 200mA (Io), Any Speed
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200nA @ 50V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35125°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO214AC в производствеStandard200V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs1µA @ 200V12pF @ 4V, 1MHzSMD Поверхностный монтажDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 150MA SOD323 в производствеStandard75V150mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns100µA @ 100V
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SMD Поверхностный монтажSC-76, SOD-323SOD-323-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 250MA SOD123 в производствеStandard100V250mA (DC)1.25V @ 200mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 100V1.5pF @ 0V, 1MHzSMD Поверхностный монтажSOD-123SOD-123150°C (Max)
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