|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
в производстве | Standard | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
в производстве | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 65A TO247AC |
в производстве | Schottky | 15V | 65A | 500mV @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18mA @ 15V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220FP |
в производстве | Standard | 600V | 20A | 1.67V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 40A TO247AC |
в производстве | Schottky | 15V | 40A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
в производстве | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247 |
в производстве | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
в производстве | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
в производстве | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
в производстве | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 60A TO247AC |
в производстве | Standard | 800V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
в производстве | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
в производстве | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
в производстве | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
в производстве | Standard | 600V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 150MA DO35 |
в производстве | Standard | 50V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 25V 150MA DO35 |
в производстве | Standard | 25V | 150mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 25V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 300MA DO35 |
в производстве | Standard | 100V | 300mA | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 25V 150MA DO35 |
в производстве | Standard | 25V | 150mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 25V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 25V 300MA DO35 |
в производстве | Standard | 25V | 300mA (DC) | 1V @ 30mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 25V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 250MA DO35 |
в производстве | Standard | 100V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 100V | 1.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 2A DO35 |
в производстве | Standard | 75V | 2A | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 5µA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 250MA DO35 |
в производстве | Standard | 150V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 1.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 250MA DO35 |
в производстве | Standard | 150V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 1.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 150MA DO35 |
в производстве | Standard | 50V | 150mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 250MA SOD80 |
в производстве | Standard | 100V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 100V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 60V 600MA DO35 |
в производстве | Standard | 60V | 600mA (DC) | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 60V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 60V 600MA DO35 |
в производстве | Standard | 60V | 600mA (DC) | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 60V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
в производстве | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 250MA SOD80 |
в производстве | Standard | 100V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 100V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 250MA SOD80 |
в производстве | Standard | 150V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-80 Variant | SOD-80 QuadroMELF | 150°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GP 50V 250MA MICROMELF |
в производстве | Standard | 50V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 50V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | 2-SMD, No Lead | MicroMELF | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOT23 |
в производстве | Standard | 75V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
в производстве | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
в производстве | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
в производстве | Standard | 200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GP 200V 250MA MICROMELF |
в производстве | Standard | 200V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | 2-SMD, No Lead | MicroMELF | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 250MA SOD323 |
в производстве | Standard | 75V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 150MA SOD323 |
в производстве | Standard | 50V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 250MA SOD123 |
в производстве | Standard | 75V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
в производстве | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 60V 200MA DO35 |
в производстве | Standard | 60V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 30V | 3pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA DO35 |
в производстве | Schottky | 60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 60V | 1.6pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
в производстве | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD123 |
в производстве | Standard | 75V | 150mA | 720mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | - | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 250MA SOD123 |
в производстве | Standard | 75V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V DO35 |
в производстве | Schottky | 60V | 30mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
в производстве | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100µA @ 100V | - | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 250MA SOD123 |
в производстве | Standard | 100V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 100V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | 150°C (Max) |