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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 12A DO203AA |
в производстве | Standard | 1000V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
в производстве | Standard, Reverse Polarity | 1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
в производстве | Standard, Reverse Polarity | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 70A DO203AB |
в производстве | Standard | 200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
в производстве | Standard | 400V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 85A DO203AB |
в производстве | Standard | 200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A DO203AB |
в производстве | Standard | 1600V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 160°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
в производстве | Standard | 400V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
в производстве | Standard, Reverse Polarity | 600V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |
в производстве | Standard | 1200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
в производстве | Standard | 1200V | 30A | 4.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 40µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 150A DO205AA |
в производстве | Standard | 600V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1000V 1.0A DO-214AC |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 1000V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 800V DO-214AC SMA |
в производстве | Standard | 800V | 1.6A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.1µs | 5µA @ 800V | 11pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
в производстве | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | 6.8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO219AB |
в производстве | Schottky | 60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO220AA |
в производстве | Standard | 200V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 200V | 9.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO220AA |
в производстве | Standard | 400V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 400V | 9.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO-219AB |
в производстве | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.6A DO220AA |
в производстве | Standard | 100V | 1.6A | 1.05V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 100V | 13pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO221AC |
в производстве | Standard | 200V | 2A (DC) | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 200V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO-219AB |
в производстве | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO-219AB |
в производстве | Schottky | 40V | 2A | 580mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220µA @ 40V | 125pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO221AC |
в производстве | Standard | 100V | 2A (DC) | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 100V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
в производстве | Standard | 600V | 500mA | 1.3V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
в производстве | Avalanche | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | 12.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
в производстве | Standard | 400V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.5A DO201AD |
в производстве | Standard | 100V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A DO220 |
в производстве | Avalanche | 400V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 400V | 10.4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
в производстве | Standard | 200V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 200V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.4A TO277A |
в производстве | Avalanche | 600V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 600V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.4A TO277A |
в производстве | Avalanche | 200V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A TO263AC |
в производстве | Standard | 100V | 3A (DC) | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3000ns | 15µA @ 100V | 67pF @4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3.2A TO263AC |
в производстве | Standard | 600V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 600V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.2A TO263AC |
в производстве | Standard | 100V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 100V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 30A SMPD |
в производстве | Schottky | 45V | 30A (DC) | 650mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3.2A TO263AC |
в производстве | Standard | 600V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 600V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.9A TO263AC |
в производстве | Standard | 100V | 3.9A | 1.2V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 25µA @ 100V | 150pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A TO262AA |
в производстве | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
в производстве | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 5A TO262AA |
в производстве | Schottky | 200V | 5A | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO252AA |
в производстве | Standard | 1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1000V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 12A DO203AA |
в производстве | Standard | 150V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.25mA @ 150V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
в производстве | Standard | 1200V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC |
в производстве | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220AC |
в производстве | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -45°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 25A DO203AA |
в производстве | Standard | 400V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
в производстве | Standard | 800V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO247AC |
в производстве | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A DO203AA |
в производстве | Standard, Reverse Polarity | 600V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
