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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V SOD123 |
в производстве | Schottky | 20V | - | 600mV @ 200mA | - | 10ns | 5µA @ 10V | 50pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 140V 200MA SOD80 |
в производстве | Standard | 140V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 60V | 3pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO214AC |
в производстве | Schottky | 20V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
в производстве | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 400V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 1000V DO-214AA SMB |
в производстве | Standard | 1000V | 1.6A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.1µs | 5µA @ 1000V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
в производстве | Schottky | 20V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
в производстве | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A MPG06 |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO220AA |
в производстве | Schottky | 40V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 70pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
в производстве | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AC |
в производстве | Standard | 200V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 3µA @ 200V | 11pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
в производстве | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
в производстве | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 7pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO204AL |
в производстве | Schottky | 50V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
в производстве | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 200V 2ADO-214AB SMC |
в производстве | Standard | 200V | 2A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.8µs | 5µA @ 200V | 26pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
в производстве | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO-219AB |
в производстве | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO220AA |
в производстве | Schottky | 30V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO221AC |
в производстве | Standard | 600V | 2A (DC) | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 600V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
в производстве | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 100V | 70pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1000V 3.0A DO-214AB |
в производстве | Standard | 1000V | 2A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.8µs | 5µA @ 1000V | 26pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AC |
в производстве | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
в производстве | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
в производстве | Standard | 1000V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
в производстве | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
в производстве | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
в производстве | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
в производстве | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
в производстве | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
в производстве | Avalanche | 600V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 2A DO220AA |
в производстве | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
в производстве | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
в производстве | Avalanche | 400V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
в производстве | Standard | 200V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
в производстве | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
в производстве | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 15pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
в производстве | Avalanche | 200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | 12.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
в производстве | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
в производстве | Standard | 600V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |
в производстве | Standard | 800V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
в производстве | Standard | 1000V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
в производстве | Standard | 100V | 500mA | 1.2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | 4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
в производстве | Standard | 300V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 7pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO221AC |
в производстве | Standard | 100V | 3A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 100V | 19pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO221AC |
в производстве | Standard | 400V | 3A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | 19pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
в производстве | Standard | 400V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
