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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AA |
в производстве | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AA |
в производстве | Standard | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
в производстве | Standard | 200V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
в производстве | Standard | 50V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 50V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
в производстве | Schottky | 100V | 1.9A (DC) | 770mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO201AD |
в производстве | Schottky | 50V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO201AD |
в производстве | Schottky | 60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3.5A DO201AD |
в производстве | Standard | 200V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
в производстве | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
в производстве | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
в производстве | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A SOD57 |
в производстве | Avalanche | 100V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO214AB |
в производстве | Standard | 400V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 40pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
в производстве | Standard | 400V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
в производстве | Standard | 600V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | 34pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 5A DO201AD |
в производстве | Schottky | 20V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
в производстве | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
в производстве | Schottky | 40V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 280pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
в производстве | Schottky | 30V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | 280pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
в производстве | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AB |
в производстве | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AB |
в производстве | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A D-PAK |
в производстве | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 3µA @ 200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
в производстве | Standard | 600V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | 34pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.3A TO277 |
в производстве | Avalanche | 1000V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
в производстве | Standard | 200V | 6A | 940mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 2µA @ 200V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A SMPD |
в производстве | Schottky | 45V | 20A (DC) | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5mA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
в производстве | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
в производстве | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
в производстве | Avalanche | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
в производстве | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3.9A TO263AC |
в производстве | Standard | 600V | 3.9A | 1.2V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 25µA @ 600V | 150pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 40A TO263AC |
в производстве | Schottky | 45V | 40A | 660mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
в производстве | Standard | 600V | 5A | 2.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 20µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO263AB |
в производстве | Schottky | 45V | 20A (DC) | 660mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 200°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
в производстве | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 200µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D2PAK |
в производстве | Standard | 600V | 15A | 2.45V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 29ns | 15µA @ 600V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO220AC |
в производстве | Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
в производстве | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
в производстве | Standard | 200V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
в производстве | Standard | 200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
в производстве | Standard | 100V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
в производстве | Standard | 600V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO247AC |
в производстве | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A DO203AA |
в производстве | Standard | 600V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30A TO247AC |
в производстве | Schottky | 60V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 480µA @ 60V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A POWIRTAB |
в производстве | Standard | 400V | 80A | 1.3V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 35A DO203AB |
в производстве | Standard | 200V | 35A | 1.7V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 35A DO203AB |
в производстве | Standard | 100V | 35A | 1.7V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A DO203AB |
в производстве | Standard | 200V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 175°C |
