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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO201AD |
в производстве | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3A DO201AD |
в производстве | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 4.9A DO214AB |
в производстве | Schottky | 45V | 4.9A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.85mA @ 45V | 1216pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
в производстве | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 17pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 2A SOD57 |
в производстве | Avalanche | 1000V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
в производстве | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
в производстве | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |
в производстве | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A SOD57 |
в производстве | Avalanche | 100V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
в производстве | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
в производстве | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.6KV 800MA SOD57 |
в производстве | Avalanche | 1600V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
в производстве | Schottky | 100V | 1.9A (DC) | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
в производстве | Schottky | 100V | 1.9A (DC) | 770mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 1A DO214AA |
в производстве | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO214AB |
в производстве | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
в производстве | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
в производстве | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO201AD |
в производстве | Schottky | 30V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
в производстве | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
в производстве | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
в производстве | Standard | 400V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AA |
в производстве | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AA |
в производстве | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AA |
в производстве | Schottky | 40V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 8A TO277A |
в производстве | Schottky | 30V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO214AB |
в производстве | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
в производстве | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
в производстве | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 30pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
в производстве | Schottky | 20V | 2A | 440mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
в производстве | Schottky | 30V | 2A | 440mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO214AB |
в производстве | Standard | 600V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 3µA @ 600V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
в производстве | Standard | 400V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 44pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
в производстве | Avalanche | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3A DO214AB |
в производстве | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
в производстве | Avalanche | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
в производстве | Standard | 400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
в производстве | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
в производстве | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
в производстве | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
в производстве | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
в производстве | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
в производстве | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
в производстве | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DO214AB |
в производстве | Standard | 600V | 5A | 1.95V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 3µA @ 600V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 3A SOD64 |
в производстве | Avalanche | 1000V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
в производстве | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
в производстве | Standard | 1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 3.5A SOD64 |
в производстве | Avalanche | 150V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 2.5A DO201 |
в производстве | Standard | 1500V | 2.5A | 1.6V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1500V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
