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ON Semiconductor |
IC DRIVER GATE HI/LO SIDE SOP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRIVR DUAL HS 4A 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC MOSFET DRIVR DUAL HS 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.3A, 1.4A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDG 20SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Texas Instruments |
IC GATE DVR LOW SIDE 1CH SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 4A, 4A | Inverting, Non-Inverting | - | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Microchip Technology |
IC MOSFET DVR 6A 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 6A 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER GATE HALF BRIDGE 8WSON |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.3A, 1.4A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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ON Semiconductor |
IC MOSFET DRIVER QFN |
в производстве | High-Side or Low-Side | Synchronous | 1 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | - | Non-Inverting | 35V | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 36-TFQFN Exposed Pad | 36-QFN (6x4) |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDG 20SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 2.5V | 350mA, 650mA | Non-Inverting | 200V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE OSC 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 14DSO |
в производстве | Half-Bridge | Independent | 2 | IGBT | 10 V ~ 25 V | 1.1V, 1.7V | 2.3A, 2.3A | Non-Inverting | 600V | 48ns, 37ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | PG-DSO-14 |
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Texas Instruments |
IC DVR GATE HALF BRIDGE 10WSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.8A, 1.8A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
HIGH SIDE PROTECTION CONTROL |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 5.5 V ~ 65 V | 0.8V, 2V | 24µA, 2.2mA | Non-Inverting | - | - | -40°C ~ 125°C | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-VSSOP |
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Analog Devices Inc. |
IC DVR DUAL NONINVERT 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4A, 4A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR HI/LO 600V 4A 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 18 V | 1.2V, 2.7V | 4A, 4A | Non-Inverting | 600V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET HI SIDE SOT143 |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 2.7 V ~ 9 V | 0.8V, 2.4V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | TO-253-4, TO-253AA | SOT-143 |
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Infineon Technologies |
HI/LO SIDE DRVR 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.2V | 1A, 1A | Inverting | 200V | 35ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Inverting, Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
ICMOSFET DVR W/LOSS PROT 8-SOIC |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 7 V ~ 26 V | 1.5V, 3.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Inverting, Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC MOSFET DRIVER SGL HS 9A 8MSOP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1.1V, 2.7V | 9A, 9A | Non-Inverting | - | 20ns, 20ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC CTRL HIGH SIDE AUTO 10MSOP |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 5.5 V ~ 65 V | 0.8V, 2V | 24µA, 2.2mA | Non-Inverting | - | - | -40°C ~ 125°C | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-VSSOP |
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Microchip Technology |
IC MOSFET DRIVER HI VOLT 400V 8S |
в производстве | High-Side | Synchronous | 2 | N-Channel MOSFET | 3.15 V ~ 5.5 V | 0.5V, 3.15V | - | Non-Inverting | 400V | 650µs, 3ms (Max) | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 9A LOSIDE 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 3A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 0.8V, 2.5V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 3A 8SOPWR |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 0.8V, 2.5V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-PowerSOIC (0.154", 3.90mm Width) | 8-SO PowerPad |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 3A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 0.8V, 2.5V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER CURR SENSE 1CHAN 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER N-CH 8-DFN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.5 V | 3V, 6.5V | 3.2A, 4.5A | Non-Inverting | 42V | 8ns, 7ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-DFN (2x3) |
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Infineon Technologies |
IC DVR HI/LOW SIDE 600V 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Microchip Technology |
IC DRIVER MOSF HI/LO SIDE 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
