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Microchip Technology |
IC DRIVER MOSF 12A LO SIDE 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 12A, 12A | Inverting | - | 20ns, 24ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 9A NON-INV 8DFN |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
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Microchip Technology |
IC MOSFET DVR 12A HS 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 100V TTL 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 16 V | 0.8V, 2.2V | 2A, 3A | Non-Inverting | 118V | 10ns, 6ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 9A INV TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Microchip Technology |
IC MOSFET DVR 9A NON-INV TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Microchip Technology |
IC DRIVER MOSF HI SIDE HS 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 36 V | 0.8V, 2V | - | Non-Inverting | - | 400ns, 400ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC RELAY DRIVER 16SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 10 V ~ 450 V | - | - | Non-Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width), 14 Leads | 16-SOIC |
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Microchip Technology |
IC DRIVR MOSF 12A LOSIDE TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 12A, 12A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 70°C (TA) | Through Hole | TO-220-5 | TO-220-5 |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16-SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DVR QUAD AND 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DVR QUAD AND 14DIP |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
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Microchip Technology |
IC MOSFET DVR AND/INV 14DIP |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
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Microchip Technology |
IC DRIVER MOSF HI/LO SIDE 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 7 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DVR MOSFET LOW SIDE 4TQFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 1.5A, 1.5A | Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 4-UQFN | 4-TQFN (1.2x1.2) |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 2A 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 12ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER HIGH/LOW 8DFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | 36V | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) |
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Microchip Technology |
IC MOSFET DVR 4.0A DUAL 8DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DRIVER 100V CMOS 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 16 V | 3V, 8V | 2A, 3A | Non-Inverting | 118V | 10ns, 6ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 12A HS 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSFET 9A LS TO-220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Microchip Technology |
IC DRIVER MOSFET 9A LS TO-220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Microchip Technology |
IC MOSFET DVR 9A N-INV 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 60ns, 60ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16-SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DVR QUAD AND 14DIP |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
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Microchip Technology |
IC MOSFET DVR QUAD NAND 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC DRIVER MIN PARTS HI/LO 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4.75 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET HI/LO SIDE 8DIP |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 7 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSF HI/LOW SIDE 8-DIP |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4.75 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 14-DIP |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Microchip Technology |
IC MOSFET DVR 0.5A SINGLE SOT-23 |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 40ns, 28ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Microchip Technology |
IC MOSFET DVR 85V HALF BRDG |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Microchip Technology |
3.0A MATCHED HIGH -SPEED LOW-S |
в производстве | High-Side | Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
