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Microchip Technology |
IC MOSFET DRIVER 6A 8MSOP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Microchip Technology |
IC MOSFET DVR HS SGL 6A 8-MLF |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 1.607V, 1.615V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
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Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A INV 8-MLF |
в производстве | Low-Side | Single | 1 | P-Channel MOSFET | 4.5 V ~ 13.2 V | 1.607V, 1.615V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
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Microchip Technology |
IC MOSFET DRIVER 6A INV 8-MSOP |
в производстве | Low-Side | Single | 1 | P-Channel MOSFET | 4.5 V ~ 13.2 V | 1.607V, 1.615V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 4.5A 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Non-Inverting | - | 9.5ns, 9ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 4.5A 8MSOP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Inverting | - | 9.5ns, 9ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 6A INVERT 8-MLF |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 12ns, 13ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 30ns, 30ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 6A, 6A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 4.5A 8WDFN |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Inverting | - | 9.5ns, 9ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-WDFN (2x2) |
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Microchip Technology |
IC MOSFET DRIVER 6A 8MSOP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 6A, 6A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
4.5A MATCHED HIGH -SPEED LOW-S |
в производстве | Low-Side | Single | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER HI SPEED 16VQFN |
в производстве | Half-Bridge | Independent | 4 | N-Channel, P-Channel MOSFET | 5 V ~ 10 V | 0.3V, 1.7V | 2A, 2A | Inverting, Non-Inverting | - | 7ns, 7ns | -20°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 16-VFQFN Exposed Pad | 16-QFN (3x3) |
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Microchip Technology |
IC MOSFET DVR 2A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 18ns, 18ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 3A L-SIDE 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC MOSFET DRIVER HI SPEED 12QFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 13 V | 0.3V, 1.2V | 2A, 2A | Non-Inverting | - | 6ns, 6ns | -20°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 12-VQFN Exposed Pad | 12-QFN (4x4) |
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Microchip Technology |
IC MOSFET DRIVER HI SPEED 12QFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 13 V | 0.3V, 1.2V | 2A, 2A | Non-Inverting | - | 6ns, 6ns | -20°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 12-VQFN Exposed Pad | 12-QFN (4x4) |
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Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 6A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR HI/LOW SIDE 8ML |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (3x3) |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 4.0A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 4.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC MOSFET DRIVER HI VOLT 400V 10 |
в производстве | High-Side | Synchronous | 2 | N-Channel MOSFET | 3.15 V ~ 5.5 V | 0.5V, 3.15V | - | Non-Inverting | 400V | 650µs, 3ms (Max) | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-VFDFN Exposed Pad | 10-DFN (3x4) |
