|
|
ON Semiconductor |
IC GATE DVR LOSIDE DUAL 2A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8-SOP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 1.2V, 2.9V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC GATE DRVR DUAL 4A CMOS 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC BRIDGE DVR P/N-CH 2A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC BRIDGE DVR P-N 2A 30V 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 8 V ~ 27 V | 0.8V, 2.25V | 1A, 1.5A | Inverting, Non-Inverting | - | 21ns, 8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
LOW-COST HIGH VOLTAGE DUA |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
|
|
ON Semiconductor |
IC GATE DRVR DUAL NONINV 4A 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC MOSFET DRIVER BUCK DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.8V | 5A, 5A | Inverting | - | 8ns, 8ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DVR 1CH 10A 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.5V, 1.9V | 10A, 10A | Inverting, Non-Inverting | - | 4ns, 4ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER LOW-SIDE DUAL 8WDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.8V | 5A, 5A | Non-Inverting | - | 8ns, 8ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WDFN (3x3) |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC GATE DRIVER HI/LO SIDE 14-SOP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 60ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
|
|
ON Semiconductor |
IC MOSFET DVR 1CH 10A 8DFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 20 V | - | 10A, 10A | Inverting, Non-Inverting | - | 4ns, 4ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
|
|
ON Semiconductor |
IC MOSFET DVR 1CH 10A 8DFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.5V, 1.9V | 10A, 10A | Inverting, Non-Inverting | - | 4ns, 4ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC LOW SIDE IGBT DRIVER 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT | 25V (Max) | 0.8V, 2V | 1.5A, 2A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
HALF BRIDGE GATE DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC MOSFET DRVR DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER DUAL 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A HS INV 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER HI/LOW SIDE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A HS 8-MLP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
|
|
ON Semiconductor |
IC GATE DVR HALF BRIDGE 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 2A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER DUAL 2A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR LOSIDE DUAL 2A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
HIGH CURRENT IGBT GATE DRIVER |
в производстве | High-Side or Low-Side | Synchronous | 1 | IGBT | 20V | - | 7.8A, 6.8A | - | - | 18ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR HI SIDE RESET 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 200mA, 400mA | Non-Inverting | 600V | 200ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR HALF BRIDGE 14SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER HI SIDE 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 250mA, 500mA | Inverting | 600V | 15ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR MONO HI/LO 16SOP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 4.5V, 9.5V | 3A, 3A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
|
|
ON Semiconductor |
IC MOSFET DRVR HIGH VOLT 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 1.4A, 2.2A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER HI/LO 600V 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 18 V | 1.2V, 2.5V | 4.3A, 4.3A | Non-Inverting | 600V | 12ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A HS INV 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL 4A TTL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR DUAL INV 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
