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ON Semiconductor |
IC GATE DRIVER HI LOW SIDE 8-SOP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DRIVER HI LOW SIDE 14SOP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 350mA, 650mA | Non-Inverting | 200V | 60ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR 3CH HALF BRDG 20-SOP |
устарелый | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 2.5V | 350mA, 650mA | Non-Inverting | 200V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 35V | 20ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER VR11.1/AMD 10DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8-DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (3x3) |
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ON Semiconductor |
IC PREDRIVER FLEXMOS 20-SOIC |
устарелый | High-Side | Single | 1 | N-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2.2V | - | Non-Inverting | 50V | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5 V ~ 20 V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600V | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HIGH SIDE 8SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 250mA, 500mA | Inverting | 600V | 15ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HIGH SIDE 8SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 200mA, 400mA | Non-Inverting | 600V | 200ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HIGH SIDE 8SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 20 V | - | 450mA, 450mA | Inverting | 300V | 65ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR MONO HI/LO 14DIP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 4.5V, 9.5V | 3A, 3A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5 V ~ 20 V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600V | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 250mA, 500mA | Inverting | 600V | 15ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 200mA, 400mA | Non-Inverting | 600V | 200ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 20 V | - | 450mA, 450mA | Inverting | 300V | 65ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI/LOW SIDE 8SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC DRIVER MOSFET DUAL 4A 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 6.5 V | 0.8V, 2V | 4A, 4A | Inverting, Non-Inverting | 25V | 8ns, 14ns | -30°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DRIVER DUAL |
устарелый | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DVR DUAL HV 8DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 5.5 V | 0.8V, 2V | - | Inverting, Non-Inverting | - | 20ns, 15ns | -10°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 30V | 18ns, 10ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI SPEED 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 250mA, 500mA | Non-Inverting | 600V | 70ns, 30ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 16SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 4.5V, 9.5V | 3A, 3A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14-SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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ON Semiconductor |
IC GATE-DRIVE 3PH HALFBRDG 24SOP |
устарелый | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 24-SOIC (0.295", 7.50mm Width) | 24-SOP |
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ON Semiconductor |
IC GATE-DRIVE 3PH HALFBRDG 24SOP |
устарелый | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 24-SOIC (0.295", 7.50mm Width) | 24-SOP |
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ON Semiconductor |
IC MOSFET DRIVER SMD |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 3.3V | - | Non-Inverting | - | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC GATE DRIVER HI/LOW SIDE 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 1.2V, 2.9V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14SOIC |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRIDGE 14-SOIC |
Discontinued at - | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 1.2V, 2.9V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.209", 5.30mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC GATE DRIVER VR11.1/AMD 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DVR SYNC VR12 8-DFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 3.3V | - | Non-Inverting | - | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 10-MSOP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 5.5 V | 0.8V, 2V | - | Inverting, Non-Inverting | - | 20ns, 15ns | -10°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8LFCSP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 35V | 20ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, CSP | 8-LFCSP (3x3) |
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ON Semiconductor |
IC MOSFET DVR SYNC VR12 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 0.7V, 3.4V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DVR SYNC VR12 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 0.7V, 3.4V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DRIVER VR12.5 QFN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 0.7V, 3.4V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DVR HIGH SPEED QFN |
устарелый | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
