|
|
ON Semiconductor |
IC DRIVER LOW-SIDE DUAL 8WDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.8V | 5A, 5A | Inverting | - | 8ns, 8ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-WDFN (3x3) |
|
|
ON Semiconductor |
IC MOSFET DVR HS 5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.8V | 5A, 5A | Inverting | - | 8ns, 8ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
ON Semiconductor |
IC MOSFET DVR HS 5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.8V | 5A, 5A | Inverting, Non-Inverting | - | 8ns, 8ns | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
ON Semiconductor |
IC GATE DVR DUAL INV 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
METAL SPIN OF NCD5703A. H |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
METAL SPIN OF NCD5703B. H |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
METAL SPIN OF NCD5703C. H |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
IC GATE DRIVER DUAL 2A 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER QFN |
в производстве | High-Side or Low-Side | Synchronous | 1 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | - | Non-Inverting | 35V | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 36-TFQFN Exposed Pad | 36-QFN (6x4) |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A CMOS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
HIGH CURRENT IGBT GATE DR |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
HIGH CURRENT IGBT GATE DR |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
HIGH CURRENT IGBT GATE DR |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DVR HIGH VOLT 8SOIC |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
HIGH VOLT GATE DRIVER SO8 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
HIGH PERFORMANCE DUAL MOS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
HIGH PERFORMANCE DUAL MOS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
IC MOSFET PRE-DVR HEX LO 32QFN |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
AUTOMOTIVE DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8DIP |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
ON Semiconductor |
IC MOSFET DVR DUAL N-CH 14TSSOP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 6 V | 0.8V, 2V | - | Non-Inverting | 30V | 20ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) | 14-TSSOP |
|
|
ON Semiconductor |
IC MOSFET DVR DUAL N-CH 14TSSOP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 6 V | 0.8V, 2V | - | Non-Inverting | 30V | 20ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) | 14-TSSOP |
|
|
ON Semiconductor |
IC MOSFET DVR DUAL N-CH 8-SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 7.5 V | 0.8V, 2V | - | Non-Inverting | 30V | 20ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8DIP |
устарелый | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL 4A 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 6.5 V | 0.8V, 2V | 4A, 4A | Inverting, Non-Inverting | 25V | 8ns, 14ns | -30°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRVR MOSF SYNC BUCK 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 26V | 15ns, 15ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8SOIC |
устарелый | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC PREDRIVER IGBT IGNITION 8SOIC |
устарелый | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 7 V ~ 10 V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC PREDRIVER IGBT IGNITION 8DIP |
устарелый | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 7 V ~ 10 V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8SOIC |
устарелый | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DVR DUAL BOOTST 10MSOP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | - | Non-Inverting | 30V | 20ns, 25ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
|
|
ON Semiconductor |
IC MOSFET DVR DUAL BOOTST 10MSOP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 6 V | 0.8V, 2V | - | Non-Inverting | 30V | 14ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
|
|
ON Semiconductor |
IC DRIVER GATE HIGH SIDE 8SOIC |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 3.6V | 250mA, 500mA | Non-Inverting | 600V | 70ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC DRIVER GATE HALF BRIDGE 8SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 90mA, 180mA | Non-Inverting | 600V | 230ns, 90ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC DRIVER GATE HALF BRIDGE 8SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 60ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC DRVR MOSF SYNC BUCK 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 26V | 15ns, 15ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2.5V | - | Inverting, Non-Inverting | 15V | 40ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DRIVER HIGH SIDE 8SOP |
устарелый | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 250mA, 500mA | Non-Inverting | 600V | 70ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL 12V 8MLP |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2.5V | - | Inverting, Non-Inverting | 15V | 40ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-MLP (5x6) |
|
|
ON Semiconductor |
IC DRIVER MOSFET DUAL 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2.5V | - | Inverting, Non-Inverting | 15V | 40ns, 20ns | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15 V ~ 13.2 V | 0.8V, 2V | - | Non-Inverting | 25V | 25ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
