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ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER DUAL 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5 V ~ 20 V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600V | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR LOSIDE DUAL 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
HIGH PERFORMANCE DUAL MOS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5 V ~ 20 V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600V | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER HI/LO 600V 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 18 V | 1.2V, 2.5V | 4.3A, 4.3A | Non-Inverting | 600V | 12ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI LOW SIDE 14SOP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
HIGH AND LOW SIDE GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 16 V | 1.3V, 2.5V | 3A, 6A | Non-Inverting | 118V | 6ns, 4ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-MLP (4x4) |
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ON Semiconductor |
HIGH CURRENT IGBT GATE DRIVER |
в производстве | High-Side or Low-Side | Synchronous | - | IGBT | 20V | - | 7.8A, 6.8A | - | - | 18ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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ON Semiconductor |
IGBT GATE DRIVER |
в производстве | High-Side or Low-Side | Synchronous | - | IGBT | 20V | 0.75V, 4.3V | 7.8A, 6.8A | - | - | 9.2ns, 7.9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3CH 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
устарелый | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC IGNITION MODULE DRIVER 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT | 4 V ~ 28 V | 1.2V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DVR HIGH VOLT 8-DIP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 1.4A, 2.2A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER VR12.5 8DFN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 3.3V | - | Non-Inverting | 40V | 16ns, 11ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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ON Semiconductor |
IC DRIVER HALF BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 250mA, 500mA | Non-Inverting | 600V | 85ns, 35ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR LOW DUAL 4A HS 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC GATE DVR DUAL 4A 8-MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL 2A 8-MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC DRIVER GATE HALF BRIDGE 14SOP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 13 V ~ 20 V | 1.2V, 2.5V | 250mA, 500mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DVR LOW DUAL 4A HS 8MLP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR LOSIDE DUAL 4A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL 4A TTL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A HS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A TTL 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A CMOS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A HS INV 8-MLP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC GATE DVR SGL 9A LOSIDE 8-MLP |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-MLP (3x3) |
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ON Semiconductor |
IC DRIVER GATE HI/LO SIDE 8-SOP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC BRIDGE DVR P/N-CH 2A 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI SIDE RESET 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 200mA, 400mA | Non-Inverting | 600V | 200ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A TTL 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER GATE HI/LO SIDE 14-SOP |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
