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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA |
в производстве | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
в производстве | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
в производстве | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
в производстве | Avalanche | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1.5A DO214AA |
в производстве | Standard | 50V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 50V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1.1A DO219AB |
в производстве | Schottky | 20V | 1.1A | 420mV @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 250µA @ 20V | - | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO221AC |
в производстве | Standard | 600V | 2A (DC) | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 600V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO204AC |
в производстве | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO204AC |
в производстве | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO204AC |
в производстве | Schottky | 60V | 2A | 680mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO-219AB |
в производстве | Schottky | 100V | 2A | 860mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 100V | 70pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA |
в производстве | Schottky | 90V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | 65pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
в производстве | Standard | 200V | 500mA | 1.2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 200V | 4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
в производстве | Standard | 200V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 7pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
в производстве | Standard | 400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.7A DO214AC |
в производстве | Schottky | 100V | 1.7A (DC) | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | 175pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
в производстве | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
в производстве | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO220AA |
в производстве | Schottky | 100V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 100V | 65pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO220AA |
в производстве | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO220AA |
в производстве | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 130pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO220AA |
в производстве | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 130pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO201AD |
в производстве | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO201AD |
в производстве | Schottky | 30V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A SMB |
в производстве | Schottky | 30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | 200pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO201AD |
в производстве | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO201AD |
в производстве | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AA |
в производстве | Schottky | 40V | 4A | 490mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO204AC |
в производстве | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
в производстве | Standard | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
в производстве | Standard | 100V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 10pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA |
в производстве | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 15pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | - | SMD Поверхностный монтаж | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
в производстве | Standard | 1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
в производстве | Standard | 400V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
в производстве | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
в производстве | Standard | 300V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 300V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO201AD |
в производстве | Schottky | 60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
в производстве | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
в производстве | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF | DO-213AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
в производстве | Avalanche | 400V | 2A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
в производстве | Avalanche | 200V | 2A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
в производстве | Standard | 400V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
в производстве | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 8.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214BA |
в производстве | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 8.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
в производстве | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 8.5pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
в производстве | Standard | 600V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
в производстве | Avalanche | 600V | 2A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
в производстве | Avalanche | 100V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
в производстве | Standard | 600V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 60pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
