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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
в производстве | Schottky | 30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GP 40V 200MA MICROMELF |
в производстве | Standard | 40V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 15V | 3pF @ 0V, 1MHz | SMD Поверхностный монтаж | 2-SMD, No Lead | MicroMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
в производстве | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 12pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD123 |
в производстве | Schottky | 40V | 30mA (DC) | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 400MW 60V SOD123 |
в производстве | Schottky | 60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 150MA DO35 |
в производстве | Schottky | 100V | 150mA (DC) | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 75V | 10pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2A DO214AC |
в производстве | Standard | 1000V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 3µA @ 1000V | 11pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A MICROSMP |
в производстве | Schottky | 20V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 20V | 65pF @ 4V, 1MHz | SMD Поверхностный монтаж | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO220AA |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 1000V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
в производстве | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD123 |
в производстве | Schottky | 30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 70V 70MA SOD323 |
в производстве | Schottky | 70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 70V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA MINMELF |
в производстве | Schottky | 30V | 200mA | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A MICROSMP |
в производстве | Schottky | 50V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 40pF @ 4V, 1MHz | SMD Поверхностный монтаж | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A MICROSMP |
в производстве | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | SMD Поверхностный монтаж | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
в производстве | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A MICROSMP |
в производстве | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 20V | - | SMD Поверхностный монтаж | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
в производстве | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 125pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
в производстве | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO204AL |
в производстве | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO204AL |
в производстве | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO204AL |
в производстве | Schottky | 50V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO204AL |
в производстве | Schottky | 60V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2A DO214AC |
в производстве | Standard | 1000V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 3µA @ 1000V | 11pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC |
в производстве | Schottky | 40V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
в производстве | Standard | 1000V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
в производстве | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
в производстве | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 7pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
в производстве | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
в производстве | Standard | 1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO220AA |
в производстве | Schottky | 60V | 3A | 780mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A 0603 |
в производстве | Schottky | 30V | 2A | 530mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 375pF @ 0V, 1MHz | SMD Поверхностный монтаж | 0603 (1608 Metric) | CLP1608-2L | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO214AC |
в производстве | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
в производстве | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 100V | 70pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO-219AB |
в производстве | Schottky | 100V | 2A | 860mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 10V | 70pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
в производстве | Standard | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.2A DO219AB |
в производстве | Standard | 100V | 1.2A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | 4pF @ 4V, 50MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO219AB |
в производстве | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | - | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AC |
в производстве | Schottky | 60V | 2A | 750mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO220AA |
в производстве | Schottky | 30V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO219AB |
в производстве | Schottky | 60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 1.5A DO214AC |
в производстве | Schottky | 45V | 1.5A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
в производстве | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
в производстве | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
в производстве | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
в производстве | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 10pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
в производстве | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 500MA DO204 |
в производстве | Standard | 1200V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 600V 500MA DO219AB |
в производстве | Standard | 600V | 500mA | 1.15V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | 9pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO214AC |
в производстве | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 15pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
