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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
SIZ926DT-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 25V 8-POWERPAIR в производстве2 N-Channel (Dual)Standard25V40A (Tc), 60A (Tc)4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V2.2V @ 250µA19nC @ 10V, 41nC @ 10V925pF @ 10V, 2150pF @ 10V20.2W, 40W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-PowerPair® (6x5)
SP8M21FRATB
 Rohm Semiconductor 4V DRIVE NCHPCH MOSFET CORRESP в производствеN and P-ChannelStandard45V6A (Ta), 4A (Ta)25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V2.5V @ 1mA21.6nC @ 5V, 28nC @ 5V1400pF @ 10V, 2400pF @ 10V2W150°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
IPG20N04S4L08ATMA1
 Infineon Technologies MOSFET 2N-CH 8TDSON в производстве2 N-Channel (Dual)Logic Level Gate40V20A8.2 mOhm @ 17A, 10V2.2V @ 22µA39nC @ 10V3050pF @ 25V54W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8-4
SIRB40DP-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 40V POWERPAK SO8 в производстве2 N-Channel (Dual)Standard40V40A (Tc)3.25 mOhm @ 10A, 10V2.4V @ 250µA45nC @ 4.5V4290pF @ 20V46.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
IPG20N06S2L35AATMA1
 Infineon Technologies MOSFET 2N-CH 8TDSON в производстве2 N-Channel (Dual)Logic Level Gate55V2A (Tc)35 mOhm @ 15A, 10V2V @ 27µA23nC @ 10V790pF @ 25V65W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8-10
AUIRF7103QTR
 Infineon Technologies MOSFET 2N-CH 50V 3A 8SOIC в производстве2 N-Channel (Dual)Standard50V3A130 mOhm @ 3A, 10V3V @ 250µA15nC @ 10V255pF @ 25V2.4W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SIZ902DT-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR в производстве2 N-Channel (Half Bridge)Logic Level Gate30V16A12 mOhm @ 13.8A, 10V2.2V @ 250µA21nC @ 10V790pF @ 15V29W, 66W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-PowerPair® (6x5)
SIZ728DT-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 25V 16A 6-POWERPAIR в производстве2 N-Channel (Half Bridge)Logic Level Gate25V16A, 35A7.7 mOhm @ 18A, 10V2.2V @ 250µA26nC @ 10V890pF @ 12.5V27W, 48W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-PowerPair™6-PowerPair™
BUK7K32-100EX
 Nexperia USA Inc. MOSFET 2N-CH 100V 29A LFPAK56 в производстве2 N-Channel (Dual)Standard100V29A27.5 mOhm @ 5A, 10V4V @ 1mA34nC @ 10V2137pF @ 25V64W-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-1205, 8-LFPAK56LFPAK56D
SIZ998DT-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 30V 8-POWERPAIR в производстве2 N-Channel (Dual), SchottkyStandard30V20A (Tc), 60A (Tc)6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V2.2V @ 250µA8.1nC @ 4.5V, 19.8nC @ 4.5V930pF @ 15V, 2620pF @ 15V20.2W, 32.9W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-PowerPair®
SP8K32FRATB
 Rohm Semiconductor 4V DRIVE NCHNCH MOSFET CORRESP в производстве2 N-Channel (Dual)Standard60V4.5A (Ta)65 mOhm @ 4.5A, 10V2.5V @ 1mA10nC @ 5V500pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
FCAB21520L1
 Panasonic Electronic Components MOSFET 2 N-CHANNEL 10SMD в производстве2 N-Channel (Dual)Standard
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1.4V @ 1.64mA38nC @ 4V5250pF @ 10V3.8W (Ta)150°CSMD Поверхностный монтаж10-SMD, No Lead10-SMD
SIZF906DT-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 30V 60A POWERPAIR в производстве2 N-Channel (Dual)Standard30V60A (Tc)3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V2.2V @ 250µA22nC @ 4.5V, 92nC @ 4.5V2000pF @ 15V, 8200pF @ 15V38W (Tc), 83W (Tc)-55°C ~ 150°C (TA)SMD Поверхностный монтаж8-PowerWDFNPowerPAIR® 6x5F
SP8M24FRATB
 Rohm Semiconductor 4V DRIVE NCHPCH MOSFET CORRESP в производствеN and P-ChannelStandard45V4.5A (Ta), 3.5A (Ta)46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V2.5V @ 1mA9.6nC @ 5V, 18.2nC @ 5V550pF @ 10V, 1700pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
IPG20N04S408AATMA1
 Infineon Technologies MOSFET 2N-CH 8TDSON в производстве2 N-Channel (Dual)Standard40V20A7.6 mOhm @ 17A, 10V4V @ 30µA36nC @ 10V2940pF @ 25V65W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8-10
SH8M5TB1
 Rohm Semiconductor MOSFET N/P-CH 30V 6A/7A SOP8 устарелыйN and P-ChannelLogic Level Gate30V6A, 7A30 mOhm @ 6A, 10V2.5V @ 1mA7.2nC @ 5V520pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
NVMFD5853NT1G
 ON Semiconductor MOSFET 2N-CH 40V 12A SO8FL в производстве2 N-Channel (Dual)Logic Level Gate40V12A10 mOhm @ 15A, 10V4V @ 250µA24nC @ 10V1225pF @ 25V3.1W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5489NLT1G
 ON Semiconductor MOSFET 2N-CH 60V 4.5A DFN8 в производстве2 N-Channel (Dual)Logic Level Gate60V4.5A65 mOhm @ 15A, 10V2.5V @ 250µA12.4nC @ 10V330pF @ 25V3W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD5C470NLT1G
 ON Semiconductor T6 40V LL S08FL DS в производстве2 N-Channel (Dual)Standard40V11A (Ta), 36A (Tc)11.5 mOhm @ 5A, 10V2.2V @ 20µA9nC @ 10V590pF @ 25V3W (Ta), 24W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
EPC2108
 EPC MOSFET 3 N-CH 60V/100V 9BGA в производстве3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)60V, 100V1.7A, 500mA190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V2.5V @ 100µA, 2.5V @ 20µA0.22nC @ 5V, 0.044nC @ 5V22pF @ 30V, 7pF @ 30V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтаж9-VFBGA9-BGA (1.35x1.35)
ZXMHC10A07T8TA
 Diodes Incorporated MOSFET 2N/2P-CH 100V 1A/0.8A SM8 в производстве2 N and 2 P-Channel (H-Bridge)Standard100V1A, 800mA700 mOhm @ 1.5A, 10V4V @ 250µA2.9nC @ 10V138pF @ 60V1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223-8SM8
EPC2107
 EPC MOSFET 3 N-CH 100V 9BGA в производстве3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)100V1.7A, 500mA320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V2.5V @ 100µA, 2.5V @ 20µA0.16nC @ 5V, 0.044nC @ 5V16pF @ 50V, 7pF @ 50V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтаж9-VFBGA9-BGA (1.35x1.35)
NVMFD5C650NLT1G
 ON Semiconductor MOSFET 2N-CH 60V 111A S08FL в производстве2 N-Channel (Dual)Standard60V21A (Ta), 111A (Tc)4.2 mOhm @ 20A, 10V2.2V @ 98µA16nC @ 4.5V2546pF @ 25V3.5W (Ta), 125W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
SQJQ960EL-T1_GE3
 Vishay Siliconix MOSFET 2 N-CH 60V POWERPAK8X8 в производстве2 N-Channel (Dual)Standard60V63A (Tc)9 mOhm @ 10A, 10V2.5V @ 250µA24nC @ 10V1950pF @ 25V71W-55°C ~ 175°C (TJ)SMD Поверхностный монтажPowerPAK® 8 x 8 DualPowerPAK® 8 x 8 Dual
FDPC8013S
 ON Semiconductor MOSFET 2N-CH 30V 13A/26A 3.3MM в производстве2 N-Channel (Dual)Logic Level Gate30V13A, 26A6.4 mOhm @ 13A, 10V3V @ 250µA13nC @ 10V827pF @ 15V800mW, 900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFNPowerclip-33
TC6215TG-G
 Microchip Technology MOSFET N/P-CH 150V 8SOIC в производствеN and P-ChannelStandard150V
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4 Ohm @ 2A, 10V2V @ 1mA
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120pF @ 25V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
TC2320TG-G
 Microchip Technology MOSFET N/P-CH 200V 8SOIC в производствеN and P-ChannelStandard200V
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7 Ohm @ 1A, 10V2V @ 1mA
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110pF @ 25V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
SQJQ906EL-T1_GE3
 Vishay Siliconix MOSFET 2 N-CH 40V POWERPAK8X8 в производстве2 N-Channel (Dual)Standard40V160A (Tc)4.3 mOhm @ 5A, 10V2.5V @ 250µA45nC @ 10V3238pF @ 20V187W-55°C ~ 175°C (TJ)SMD Поверхностный монтажPowerPAK® 8 x 8 DualPowerPAK® 8 x 8 Dual
CSD87313DMST
 Texas Instruments MOSFET 2 N-CHANNEL 30V 8WSON в производстве2 N-Channel (Dual) Common DrainStandard30V
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1.2V @ 250µA28nC @ 4.5V4290pF @ 15V2.7W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-WSON (3.3x3.3)
FDMD8280
 ON Semiconductor MOSFET 2N-CH 80V 11A 6-MLP в производстве2 N-Channel (Dual)Standard80V11A8.2 mOhm @ 11A, 10V4V @ 250µA44nC @ 10V3050pF @ 40V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж12-PowerWDFN12-Power3.3x5
FDMD85100
 ON Semiconductor MOSFET 2N-CH 100V в производстве2 N-Channel (Half Bridge)Standard100V10.4A9.9 mOhm @ 10.4A, 10V4V @ 250µA31nC @ 10V2230pF @ 50V2.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-Power 5x6
EPC2111
 EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V16A (Ta)19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V2.5V @ 5mA2.2nC @ 5V, 5.7nC @ 5V230pF @ 15V, 590pF @ 15V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2111ENGRT
 EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V16A (Ta)19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V2.5V @ 5mA2.2nC @ 5V, 5.7nC @ 5V230pF @ 15V, 590pF @ 15V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2100ENGRT
 EPC MOSFET 2 N-CH 30V 9.5A/38A DIE в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V10A (Ta), 40A (Ta)8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V2.5V @ 4mA, 2.5V @ 16mA4.9nC @ 15V, 19nC @ 15V475pF @ 15V, 1960pF @ 15V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2102
 EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V23A4.4 mOhm @ 20A, 5V2.5V @ 7mA6.8nC @ 5V830pF @ 30V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2102ENGRT
 EPC MOSFET 2 N-CHANNEL 60V 23A DIE в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V23A (Tj)4.4 mOhm @ 20A, 5V2.5V @ 7mA6.8nC @ 5V830pF @ 30V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2101
 EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V9.5A, 38A11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V2.5V @ 3mA, 2.5V @ 12mA2.7nC @ 5V, 12nC @ 5V300pF @ 30V, 1200pF @ 30V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2101ENGRT
 EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V9.5A, 38A11.5 mOhm @ 20A, 5V2.5V @ 2mA2.7nC @ 5V300pF @ 30V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2103
 EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V28A5.5 mOhm @ 20A, 5V2.5V @ 7mA6.5nC @ 5V760pF @ 40V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2105
 EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V9.5A, 38A14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V2.5V @ 2.5mA, 2.5V @ 10mA2.5nC @ 5V, 10nC @ 5V300pF @ 40V, 1100pF @ 40V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2105ENGRT
 EPC MOSFET 2NCH 80V 9.5A DIE в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V9.5A14.5 mOhm @ 20A, 5V2.5V @ 2.5mA2.5nC @ 5V300pF @ 40V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
EPC2104
 EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG в производстве2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V23A6.3 mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
DMN63D0LT-7
 Diodes Incorporated MOSFET N-CH 100V SOT523 в производстве
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2N7002VA-7-F
 Diodes Incorporated MOSFET 2N-CH 60V 0.28A SOT-563 устарелый2 N-Channel (Dual)Standard60V280mA7.5 Ohm @ 50mA, 5V2.5V @ 250µA
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50pF @ 25V150mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
SSM6P35FE(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 0.1A ES6 в производстве2 P-Channel (Dual)Logic Level Gate20V100mA8 Ohm @ 50mA, 4V1V @ 1mA
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12.2pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
DMN5010VAK-7
 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563 в производстве2 N-Channel (Dual)Logic Level Gate50V280mA2 Ohm @ 50mA, 5V1V @ 250µA
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50pF @ 25V250mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMN5L06DMKQ-7
 Diodes Incorporated MOSFET 2N-CH 50V 305MA SOT26 в производстве2 N-Channel (Dual)Standard50V305mA2 Ohm @ 50mA, 5V1V @ 250µA
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50pF @ 25V400mW-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
2N7002VA-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.28A SOT-563 устарелый2 N-Channel (Dual)Standard60V280mA7.5 Ohm @ 50mA, 5V2.5V @ 250µA
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50pF @ 25V150mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
UP0487C00L
 Panasonic Electronic Components MOSFET 2N-CH 20V 0.1A SSMINI-6 устарелый2 N-Channel (Dual)Logic Level Gate20V100mA4 Ohm @ 10mA, 4V1.3V @ 50µA
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10pF @ 3V125mW125°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SSMINI6-F1
AO4852
 Alpha & Omega Semiconductor Inc. MOSFET 2N-CH 60V 3A 8-SOIC устарелый2 N-Channel (Dual)Logic Level Gate60V3A90 mOhm @ 3A, 10V2.6V @ 250µA9.2nC @ 10V450pF @ 30V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
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