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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
IRF7503TRPBF
 Infineon Technologies MOSFET 2N-CH 30V 2.4A MICRO8 в производстве2 N-Channel (Dual)Logic Level Gate30V2.4A135 mOhm @ 1.7A, 10V1V @ 250µA12nC @ 10V210pF @ 25V1.25W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
DMN3024LSD-13
 Diodes Incorporated MOSFET 2N-CH 30V 6.8A 8SO в производстве2 N-Channel (Dual)Logic Level Gate30V6.8A24 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V608pF @ 15V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMC4050SSD-13
 Diodes Incorporated MOSFET N/P-CH 40V 5.3A 8SO в производствеN and P-ChannelLogic Level Gate40V5.3A45 mOhm @ 3A, 10V1.8V @ 250µA37.56nC @ 10V1790.8pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMA3023PZ
 ON Semiconductor MOSFET 2P-CH 30V 2.9A MICROFET6 в производстве2 P-Channel (Dual)Logic Level Gate30V2.9A90 mOhm @ 2.9A, 4.5V1V @ 250µA11nC @ 4.5V530pF @ 15V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VDFN Exposed Pad6-MicroFET (2x2)
NTUD3174NZT5G
 ON Semiconductor MOSFET 2 N-CH 20V 220MA SOT963 в производстве2 N-Channel (Dual)Standard20V220mA (Ta)1.5 Ohm @ 100mA, 4.5V1V @ 100µA
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12.5pF @ 15V125mW (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-963SOT-963
NVLJD4007NZTAG
 ON Semiconductor MOSFET 2N-CH 30V 0.245A WDFN6 в производстве2 N-Channel (Dual)Logic Level Gate30V245mA7 Ohm @ 125mA, 4.5V1.5V @ 100µA0.75nC @ 4.5V20pF @ 5V755mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-WDFN (2x2)
SI6968BEDQ-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8-TSSOP в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V5.2A22 mOhm @ 6.5A, 4.5V1.6V @ 250µA18nC @ 4.5V
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1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
US6M1TR
 Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6 в производствеN and P-ChannelLogic Level Gate30V, 20V1.4A, 1A240 mOhm @ 1.4A, 10V2.5V @ 1mA2nC @ 5V70pF @ 10V1W150°C (TJ)SMD Поверхностный монтаж6-SMD, Flat LeadsTUMT6
SI4936CDY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V5.8A40 mOhm @ 5A, 10V3V @ 250µA9nC @ 10V325pF @ 15V2.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI9933CDY-T1-E3
 Vishay Siliconix MOSFET 2P-CH 20V 4A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate20V4A58 mOhm @ 4.8A, 4.5V1.4V @ 250µA26nC @ 10V665pF @ 10V3.1W-50°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
AO4838
 Alpha & Omega Semiconductor Inc. MOSFET 2N-CH 30V 11A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V11A9.6 mOhm @ 11A, 10V2.6V @ 250µA22nC @ 10V1300pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
FDS9926A
 ON Semiconductor MOSFET 2N-CH 20V 6.5A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate20V6.5A30 mOhm @ 6.5A, 4.5V1.5V @ 250µA9nC @ 4.5V650pF @ 10V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMB3900AN
 ON Semiconductor MOSFET 2N-CH 25V 7A 8-MLP в производстве2 N-Channel (Dual)Logic Level Gate25V7A23 mOhm @ 7A, 10V3V @ 250µA17nC @ 10V890pF @ 13V800mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-MLP, MicroFET (3x1.9)
DMP4047SSD-13
 Diodes Incorporated MOSFET 2P-CH 40V 5.1A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate40V5.1A45 mOhm @ 4.4A, 10V3V @ 250µA21.5nC @ 10V1154pF @ 20V1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
CSD75207W15
 Texas Instruments MOSFET 2P-CH 3.9A 9DSBGA в производстве2 P-Channel (Dual)Logic Level Gate
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3.9A162 mOhm @ 1A, 1.8V1.1V @ 250µA3.7nC @ 4.5V595pF @ 10V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж9-UFBGA, DSBGA9-DSBGA
VEC2616-TL-W
 ON Semiconductor MOSFET N/P-CH 60V 3A/2.5A VEC8 в производствеN and P-ChannelLogic Level Gate, 4V Drive60V3A, 2.5A80 mOhm @ 1.5A, 10V2.6V @ 1mA10nC @ 10V505pF @ 20V1W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadSOT-28FL/VEC8
FDS6961A
 ON Semiconductor MOSFET 2N-CH 30V 3.5A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V3.5A90 mOhm @ 3.5A, 10V3V @ 250µA4nC @ 5V220pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS6912A
 ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V6A28 mOhm @ 6A, 10V3V @ 250µA8.1nC @ 5V575pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7309TRPBF
 Infineon Technologies MOSFET N/P-CH 30V 4A/3A 8SOIC в производствеN and P-ChannelStandard30V4A, 3A50 mOhm @ 2.4A, 10V1V @ 250µA25nC @ 4.5V520pF @ 15V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
AO4612
 Alpha & Omega Semiconductor Inc. MOSFET N/P-CH 60V 8-SOIC в производствеN and P-ChannelLogic Level Gate60V4.5A, 3.2A56 mOhm @ 4.5A, 10V3V @ 250µA10.5nC @ 10V540pF @ 30V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
DMC4050SSDQ-13
 Diodes Incorporated MOSFET N/P-CH 40V 5.3A 8SO в производствеN and P-Channel ComplementaryStandard40V5.3A45 mOhm @ 3A, 10V1.8V @ 250µA37.56nC @ 10V1790.8pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
ECH8690-TL-H
 ON Semiconductor MOSFET N/P-CH 60V ECH8 в производствеN and P-ChannelLogic Level Gate, 4V Drive60V4.7A, 3.5A55 mOhm @ 2A, 10V
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18nC @ 10V955pF @ 20V1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
IRF7501TRPBF
 Infineon Technologies MOSFET 2N-CH 20V 2.4A MICRO8 в производстве2 N-Channel (Dual)Logic Level Gate20V2.4A135 mOhm @ 1.7A, 4.5V700mV @ 250µA8nC @ 4.5V260pF @ 15V1.25W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
AO4616
 Alpha & Omega Semiconductor Inc. MOSFET N/P-CH 30V 8A/7A 8-SOIC в производствеN and P-ChannelLogic Level Gate30V8A, 7A20 mOhm @ 8A, 10V2.4V @ 250µA18nC @ 10V888pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
FDS8984
 ON Semiconductor MOSFET 2N-CH 30V 7A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V7A23 mOhm @ 7A, 10V2.5V @ 250µA13nC @ 10V635pF @ 15V1.6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMA6023PZT
 ON Semiconductor MOSFET 2P-CH 20V 3.6A 6MICROFET в производстве2 P-Channel (Dual)Logic Level Gate20V3.6A60 mOhm @ 3.6A, 4.5V1.5V @ 250µA17nC @ 4.5V885pF @ 10V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed Pad6-MicroFET (2x2)
SI6954ADQ-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP в производстве2 N-Channel (Dual)Logic Level Gate30V3.1A53 mOhm @ 3.4A, 10V1V @ 250µA (Min)16nC @ 10V
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830mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMP3036SSD-13
 Diodes Incorporated MOSFET 2P-CH 30V 10.6A 8-SO в производстве2 P-Channel (Dual)Logic Level Gate30V10.6A20 mOhm @ 9A, 10V3V @ 250µA16.5nC @ 10V1931pF @ 15V1.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF9952TRPBF
 Infineon Technologies MOSFET N/P-CH 30V 8-SOIC в производствеN and P-ChannelLogic Level Gate30V3.5A, 2.3A100 mOhm @ 2.2A, 10V1V @ 250µA14nC @ 10V190pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS6930B
 ON Semiconductor MOSFET 2N-CH 30V 5.5A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V5.5A38 mOhm @ 5.5A, 10V3V @ 250µA3.8nC @ 5V412pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS8958B
 ON Semiconductor MOSFET N/P-CH 30V 8SOIC в производствеN and P-ChannelLogic Level Gate30V6.4A, 4.5A26 mOhm @ 6.4A, 10V3V @ 250µA12nC @ 10V540pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS8978
 ON Semiconductor MOSFET 2N-CH 30V 7.5A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V7.5A18 mOhm @ 7.5A, 10V2.5V @ 250µA26nC @ 10V1270pF @ 15V1.6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
UT6MA3TCR
 Rohm Semiconductor 20V NCHPCH MIDDLE POWER MOSFET в производствеN and P-Channel
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20V5A, 5.5A59 mOhm @ 5A, 4.5V1.5V @ 1mA6.5nC @ 4.5V460pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-PowerUDFNHUML2020L8
TT8J21TR
 Rohm Semiconductor MOSFET 2P-CH 20V 2.5A TSST8 в производстве2 P-Channel (Dual)Logic Level Gate20V2.5A68 mOhm @ 2.5A, 4.5V1V @ 1mA12nC @ 4.5V1270pF @ 10V650mW150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-TSST
CSD87501L
 Texas Instruments MOSFET 2N-CH 30V 10PICOSTAR в производстве2 N-Channel (Dual) Common DrainLogic Level Gate
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2.3V @ 250µA40nC @ 10V
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2.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж10-XFLGA10-Picostar (3.37x1.47)
FDS9953A
 ON Semiconductor MOSFET 2P-CH 30V 2.9A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V2.9A130 mOhm @ 1A, 10V3V @ 250µA3.5nC @ 10V185pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SH8KA4TB
 Rohm Semiconductor 30V NCHNCH MIDDLE POWER MOSFET в производстве2 N-Channel (Dual)
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30V9A21.4 mOhm @ 9A, 10V2.5V @ 1mA15.5nC @ 10V640pF @ 15V3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
CSD87502Q2T
 Texas Instruments MOSFET 2N-CH 30V 5A 6WSON в производстве2 N-Channel (Dual)Logic Level Gate, 5V Drive30V5A32.4 mOhm @ 4A, 10V2V @ 250µA6nC @ 10V353pF @ 15V2.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-WSON (2x2)
FDS9933A
 ON Semiconductor MOSFET 2P-CH 20V 3.8A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate20V3.8A75 mOhm @ 3.8A, 4.5V1.5V @ 250µA10nC @ 4.5V600pF @ 10V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
BUK9K134-100EX
 Nexperia USA Inc. MOSFET 2N-CH 100V 8.5A 56LFPAK в производстве2 N-Channel (Dual)Logic Level Gate100V8.5A159 mOhm @ 5A, 5V2.1V @ 1mA7.4nC @ 5V755pF @ 25V32W-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-1205, 8-LFPAK56LFPAK56D
SP8K2TB
 Rohm Semiconductor MOSFET 2N-CH 30V 6A 8-SOIC устарелый2 N-Channel (Dual)Logic Level Gate30V6A30 mOhm @ 6A, 10V2.5V @ 1mA10.1nC @ 5V520pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
STS2DNF30L
 STMicroelectronics MOSFET 2N-CH 30V 3A 8SOIC устарелый2 N-Channel (Dual)Logic Level Gate30V3A110 mOhm @ 1A, 10V2.5V @ 250µA4.5nC @ 10V121pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS4897AC
 ON Semiconductor MOSFET N/P-CH 40V 6.1A/5.2A 8SO в производствеN and P-ChannelLogic Level Gate40V6.1A, 5.2A26 mOhm @ 6.1A, 10V3V @ 250µA21nC @ 10V1055pF @ 20V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMP4050SSD-13
 Diodes Incorporated MOSFET 2P-CH 40V 4A 8SO в производстве2 P-Channel (Dual)Standard40V4A50 mOhm @ 6A, 10V3V @ 250µA13.9nC @ 10V674pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
CSD85302LT
 Texas Instruments MOSFET 2N-CH в производстве2 N-Channel (Dual) Common DrainStandard
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7.8nC @ 4.5V
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1.7W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-XFLGA4-Picostar (1.31x1.31)
IRF7319TRPBF
 Infineon Technologies MOSFET N/P-CH 30V 8SOIC в производствеN and P-ChannelStandard30V
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29 mOhm @ 5.8A, 10V1V @ 250µA33nC @ 10V650pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
CSD75208W1015T
 Texas Instruments MOSFET 2P-CH 20V 1.6A 6WLP в производстве2 P-Channel (Dual) Common SourceLogic Level Gate20V1.6A68 mOhm @ 1A, 4.5V1.1V @ 250µA2.5nC @ 4.5V410pF @ 10V750mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UFBGA, DSBGA6-DSBGA
NVMFD5877NLT1G
 ON Semiconductor MOSFET 2N-CH 60V 6A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V6A39 mOhm @ 7.5A, 10V3V @ 250µA20nC @ 10V540pF @ 25V3.2W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDZ1323NZ
 ON Semiconductor MOSFET 2N-CH 20V 10A 6WLCSP в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V10A13 mOhm @ 1A, 4.5V1.2V @ 250µA24nC @ 10V2055pF @ 10V500mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-XFBGA, WLCSP6-WLCSP (1.3x2.3)
SI5504BDC-T1-E3
 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8 в производствеN and P-ChannelLogic Level Gate30V4A, 3.7A65 mOhm @ 3.1A, 10V3V @ 250µA7nC @ 10V220pF @ 15V3.12W, 3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead1206-8 ChipFET™
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