1. Главная
  2. Продукты
  3. Дискретный полупроводник
  4. Транзисторы - полевые транзисторы, МОП-транзисторы - массивы
  5. Продукты

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
SM6K2T110
 Rohm Semiconductor MOSFET 2N-CH 60V 0.2A SOT-457 устарелый2 N-Channel (Dual)Logic Level Gate60V200mA2.4 Ohm @ 200mA, 10V2.5V @ 1mA4.4nC @ 10V15pF @ 10V300mW150°C (TJ)SMD Поверхностный монтажSC-74, SOT-457SMT6
CMXDM7002A TR
 Central Semiconductor Corp MOSFET 2N-CH 60V 0.28A SOT26 в производстве2 N-Channel (Dual)Standard60V280mA2 Ohm @ 500mA, 10V2.5V @ 250µA0.59nC @ 4.5V50pF @ 25V350mW-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
DMN2019UTS-13
 Diodes Incorporated MOSFET 2N-CH 20V 5.4A TSSOP-8 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V5.4A18.5 mOhm @ 7A, 10V950mV @ 250µA8.8nC @ 4.5V143pF @ 10V780mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
SSM6L61NU,LF
 Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 4A UDFN6 в производствеN and P-ChannelStandard20V4A
-
-
-
-
-
-
SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
SSM6N61NU,LF
 Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 4A UDFN в производстве2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V4A33 mOhm @ 4A, 4.5V1V @ 1mA3.6nC @ 4.5V410pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFNB (2x2)
DMN61D8LVTQ-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26 в производстве2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6 Thin, TSOT-23-6TSOT-26
CMLDM3757 TR
 Central Semiconductor Corp MOSFET N/P-CH 20V SOT563 в производствеN and P-ChannelLogic Level Gate20V540mA, 430mA550 mOhm @ 540mA, 4.5V1V @ 250µA1.58nC @ 4.5V150pF @ 16V350mW-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMG8601UFG-7
 Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V6.1A23 mOhm @ 6.5A, 4.5V1.05V @ 250µA8.8nC @ 4.5V143pF @ 10V920mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerUDFNU-DFN3030-8
DMT3020LFDB-7
 Diodes Incorporated MOSFET 2N-CHA 30V 7.7A DFN2020 в производстве2 N-Channel (Dual)Standard30V7.7A20 mOhm @ 9A, 10V3V @ 250µA7nC @ 10V393pF @ 15V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
US6J2TR
 Rohm Semiconductor MOSFET 2P-CH 20V 1A TUMT6 устарелый2 P-Channel (Dual)Logic Level Gate20V1A390 mOhm @ 1A, 4.5V2V @ 1mA2.1nC @ 4.5V150pF @ 10V1W150°C (TJ)SMD Поверхностный монтаж6-SMD, Flat LeadsTUMT6
DMP2066LSD-13
 Diodes Incorporated MOSFET 2P-CH 20V 5.8A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate20V5.8A40 mOhm @ 4.6A, 4.5V1.2V @ 250µA10.1nC @ 4.5V820pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMN1033UCB4-7
 Diodes Incorporated MOSFET 2N-CH 12V U-WLB1818-4 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate
-
-
-
-
37nC @ 4.5V
-
1.45W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-UFBGA, WLBGAU-WLB1818-4
AO4807
 Alpha & Omega Semiconductor Inc. MOSFET 2P-CH 30V 6A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V6A35 mOhm @ 6A, 10V2.4V @ 250µA16nC @ 10V760pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7506TRPBF
 Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 в производстве2 P-Channel (Dual)Logic Level Gate30V1.7A270 mOhm @ 1.2A, 10V1V @ 250µA11nC @ 10V180pF @ 25V1.25W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
SI4804CDY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC в производстве2 N-Channel (Dual)Standard30V8A22 mOhm @ 7.5A, 10V2.4V @ 250µA23nC @ 10V865pF @ 15V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
NTMD6N03R2G
 ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V6A32 mOhm @ 6A, 10V2.5V @ 250µA30nC @ 10V950pF @ 24V1.29W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ECH8668-TL-H
 ON Semiconductor MOSFET N/P-CH 20V 7.5A/5A ECH8 в производствеN and P-ChannelLogic Level Gate20V7.5A, 5A17 mOhm @ 4A, 4.5V
-
10.8nC @ 4.5V1060pF @ 10V1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
QS8M11TCR
 Rohm Semiconductor MOSFET N/P-CH 30V 3.5A TSMT8 устарелыйN and P-Channel
-
30V3.5A
-
-
-
-
-
-
SMD Поверхностный монтаж8-SMD, Flat LeadTSMT8
SI6954ADQ-T1-E3
 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP в производстве2 N-Channel (Dual)Logic Level Gate30V3.1A53 mOhm @ 3.4A, 10V1V @ 250µA (Min)16nC @ 10V
-
830mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
IRF8915TRPBF
 Infineon Technologies MOSFET 2N-CH 20V 8.9A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate20V8.9A18.3 mOhm @ 8.9A, 10V2.5V @ 250µA7.4nC @ 4.5V540pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMN2011UFX-7
 Diodes Incorporated MOSFET 2N-CH 20V 12.2A DFN2050-4 в производстве2 N-Channel (Dual)Standard20V12.2A (Ta)9.5 mOhm @ 10A, 4.5V1V @ 250µA56nC @ 10V2248pF @ 10V2.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-VFDFN Exposed PadV-DFN2050-4
DMN4027SSD-13
 Diodes Incorporated MOSFET 2N-CH 40V 5.4A 8SO в производстве2 N-Channel (Dual)Logic Level Gate40V5.4A27 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V604pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMN4034SSD-13
 Diodes Incorporated MOSFET 2N-CH 40V 4.8A 8SO в производстве2 N-Channel (Dual)Logic Level Gate40V4.8A34 mOhm @ 6A, 10V3V @ 250µA18nC @ 10V453pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
MTM78E2B0LBF
 Panasonic Electronic Components MOSFET 2N-CH 20V 4A WSMINI8-F1-B в производстве2 N-Channel (Dual)Standard20V4A25 mOhm @ 2A, 4V1.3V @ 1mA
-
1100pF @ 10V150mW150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadWSMini8-F1-B
SH8K41GZETB
 Rohm Semiconductor MOSFET 2N-CH 80V 3.4A 8SOP в производстве2 N-Channel (Dual)Logic Level Gate80V3.4A130 mOhm @ 3.4A, 10V2.5V @ 1mA6.6nC @ 5V600pF @ 10V1.4W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMC4028SSD-13
 Diodes Incorporated MOSFET N/P-CH 40V 8SOIC в производствеN and P-ChannelLogic Level Gate40V6.5A, 4.8A28 mOhm @ 6A, 10V3V @ 250µA12.9nC @ 10V604pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SH8M3TB1
 Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A SOP8 устарелыйN and P-ChannelLogic Level Gate30V5A, 4.5A51 mOhm @ 5A, 10V2.5V @ 1mA3.9nC @ 5V230pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
IRF7905TRPBF
 Infineon Technologies MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V7.8A, 8.9A21.8 mOhm @ 7.8A, 10V2.25V @ 25µA6.9nC @ 4.5V600pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SIS990DN-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 100V 12.1A 1212-8 в производстве2 N-Channel (Dual)Standard100V12.1A85 mOhm @ 8A, 10V4V @ 250µA8nC @ 10V250pF @ 50V25W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
CSD85312Q3E
 Texas Instruments MOSFET 2N-CH 20V 39A 8VSON в производстве2 N-Channel (Dual) Common SourceLogic Level Gate, 5V Drive20V39A12.4 mOhm @ 10A, 8V1.4V @ 250µA15.2nC @ 4.5V2390pF @ 10V2.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerVDFN8-VSON (3.3x3.3)
CSD83325LT
 Texas Instruments MOSFET 2N-CH 12V 6PICOSTAR в производстве2 N-Channel (Dual) Common DrainStandard12V
-
-
1.25V @ 250µA10.9nC @ 4.5V
-
2.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-XFBGA6-PicoStar
QS8J1TR
 Rohm Semiconductor MOSFET 2P-CH 12V 4.5A TSMT8 устарелый2 P-Channel (Dual)Logic Level Gate12V4.5A29 mOhm @ 4.5A, 4.5V1V @ 1mA31nC @ 4.5V2450pF @ 6V1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadTSMT8
IRF7902TRPBF
 Infineon Technologies MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V6.4A, 9.7A22.6 mOhm @ 6.4A, 10V2.25V @ 25µA6.9nC @ 4.5V580pF @ 15V1.4W, 2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
QS8M13TCR
 Rohm Semiconductor MOSFET N/P-CH 30V 6A/5A TSMT8 устарелыйN and P-ChannelLogic Level Gate30V6A, 5A28 mOhm @ 6A, 10V2.5V @ 1mA5.5nC @ 5V390pF @ 10V1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadTSMT8
NTMFD4902NFT1G
 ON Semiconductor MOSFET 2N-CH 30V 8DFN в производстве2 N-Channel (Dual), SchottkyLogic Level Gate30V10.3A, 13.3A6.5 mOhm @ 10A, 10V2.2V @ 250µA9.7nC @ 4.5V1150pF @ 15V1.1W, 1.16W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDS6990A
 ON Semiconductor MOSFET 2N-CH 30V 7.5A 8SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V7.5A18 mOhm @ 7.5A, 10V3V @ 250µA17nC @ 5V1235pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI5517DU-T1-GE3
 Vishay Siliconix MOSFET N/P-CH 20V 6A CHIPFET в производствеN and P-ChannelLogic Level Gate20V6A39 mOhm @ 4.4A, 4.5V1V @ 250µA16nC @ 8V520pF @ 10V8.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
ZXMN10A08DN8TA
 Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate100V1.6A250 mOhm @ 3.2A, 10V2V @ 250µA (Min)7.7nC @ 10V405pF @ 50V1.25W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
FDS4501H
 ON Semiconductor MOSFET N/P-CH 30V/20V 8SOIC в производствеN and P-ChannelLogic Level Gate30V, 20V9.3A, 5.6A18 mOhm @ 9.3A, 10V3V @ 250µA27nC @ 4.5V1958pF @ 10V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI5908DC-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 20V 4.4A 1206-8 в производстве2 N-Channel (Dual)Logic Level Gate20V4.4A40 mOhm @ 4.4A, 4.5V1V @ 250µA7.5nC @ 4.5V
-
1.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead1206-8 ChipFET™
SH8M41TB1
 Rohm Semiconductor MOSFET N/P-CH 80V 3.4A/2.6A SOP8 устарелыйN and P-ChannelLogic Level Gate80V3.4A, 2.6A130 mOhm @ 3.4A, 10V2.5V @ 1mA9.2nC @ 5V600pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
SH8M24TB1
 Rohm Semiconductor MOSFET N/P-CH 45V 4.5A/3.5A SOP8 устарелыйN and P-ChannelStandard45V4.5A, 3.5A46 mOhm @ 4.5A, 10V2.5V @ 1mA9.6nC @ 5V550pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
FDMS3686S
 ON Semiconductor MOSFET 2N-CH 30V 13A/23A 8-PQFN в производстве2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 23A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1785pF @ 10V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFNPower56
IPG20N04S408ATMA1
 Infineon Technologies MOSFET 2N-CH 40V 20A TDSON-8 в производстве2 N-Channel (Dual)Standard40V20A7.6 mOhm @ 17A, 10V4V @ 30µA36nC @ 10V2940pF @ 25V65W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8-4
SH8J65TB1
 Rohm Semiconductor MOSFET 2P-CH 30V 7A SOP8 в производстве2 P-Channel (Dual)Logic Level Gate30V7A29 mOhm @ 7A, 10V2.5V @ 1mA18nC @ 5V1200pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
FDMS3624S
 ON Semiconductor MOSFET 2N-CH 25V 17.5A/30A 8PQFN в производстве2 N-Channel (Dual) AsymmetricalLogic Level Gate25V17.5A, 30A5 mOhm @ 17.5A, 10V2V @ 250µA26nC @ 10V1570pF @ 13V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFNPower56
CSD87334Q3DT
 Texas Instruments MOSFET 2N-CH 30V 20A 8SON в производстве2 N-Channel (Dual) AsymmetricalStandard30V
-
6 mOhm @ 12A, 8V1.2V @ 250µA8.3nC @ 4.5V1260pF @ 15V6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-VSON (3.3x3.3)
EPC2110ENGRT
 EPC TRANSISTOR GAN 2N-CH 120V BUMPED DIE в производстве2 N-Channel (Dual) Common SourceGaNFET (Gallium Nitride)120V3.4A60 mOhm @ 4A, 5V2.5V @ 700µA0.8nC @ 5V80pF @ 60V
-
-40°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
ALD110900SAL
 Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
-
500 Ohm @ 4V20mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD1105SBL
 Advanced Linear Devices Inc. MOSFET 2N/2P-CH 10.6V 14SOIC в производстве2 N and 2 P-Channel Matched PairStandard10.6V
-
500 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
  1. 2
  2. 3
  3. 4
  4. 5
  5. 6
  6. 7
  7. 8
  8. 9
  9. 10
  10. 11
Email: sales@icchip.ru
Copyright © 2019 ICCHIP ® Все права защищены