Транзисторы - полевые транзисторы, МОП-транзисторы - массивы - Дискретный полупроводник - FDS6990AS BSO615CGHUMA1 SQJ952EP-T1_GE3 CSD87312Q3E - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Функция FET	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Входная емкость (Ciss) (Макс.) @ Vds	Мощность - макс.	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
FDS6990AS	ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	30V	7.5A	22 mOhm @ 7.5A, 10V	3V @ 1mA	14nC @ 5V	550pF @ 15V	900mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
BSO615CGHUMA1	Infineon Technologies	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	в производстве	N and P-Channel	Logic Level Gate	60V	3.1A, 2A	110 mOhm @ 3.1A, 10V	2V @ 20µA	22.5nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
SQJ952EP-T1_GE3	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8	в производстве	2 N-Channel (Dual)	Standard	60V	23A (Tc)	20 mOhm @ 10.3A, 10V	2.5V @ 250µA	30nC @ 10V	1800pF @ 30V	25W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-PowerTDFN	PowerPAK® SO-8 Dual
CSD87312Q3E	Texas Instruments	MOSFET 2N-CH 30V 27A 8VSON	в производстве	2 N-Channel (Dual) Common Source	Logic Level Gate	30V	27A	33 mOhm @ 7A , 8V	1.3V @ 250µA	8.2nC @ 4.5V	1250pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PowerTDFN	8-VSON (3.3x3.3)
IRF7380TRPBF	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V	2W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7317TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 8-SOIC	в производстве	N and P-Channel	Logic Level Gate	20V	6.6A, 5.3A	29 mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA3027PZ	ON Semiconductor	MOSFET 2P-CH 30V 3.3A MICRO	в производстве	2 P-Channel (Dual)	Logic Level Gate	30V	3.3A	87 mOhm @ 3.3A, 10V	3V @ 250µA	10nC @ 10V	435pF @ 15V	700mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-MicroFET (2x2)
IPG20N06S2L65AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON	в производстве	2 N-Channel (Dual)	Logic Level Gate	55V	20A	65 mOhm @ 15A, 10V	2V @ 14µA	12nC @ 10V	410pF @ 25V	43W	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-PowerVDFN	PG-TDSON-8-10
SI7904BDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8	в производстве	2 N-Channel (Dual)	Logic Level Gate	20V	6A	30 mOhm @ 7.1A, 4.5V	1V @ 250µA	24nC @ 8V	860pF @ 10V	17.8W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
ZXMN6A11DN8TA	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8-SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	60V	2.5A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	5.7nC @ 10V	330pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJ912AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8	в производстве	2 N-Channel (Dual)	Standard	40V	30A	9.3 mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
ZXMHC10A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC	в производстве	2 N and 2 P-Channel (H-Bridge)	Standard	100V	800mA, 680mA	700 mOhm @ 1.5A, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 60V	870mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMTH4007SPD-13	Diodes Incorporated	MOSFET BVDSS 31V 40V POWERDI506	в производстве	2 N-Channel (Dual)	Standard	40V	14.2A	8.6 mOhm @ 17A, 10V	4V @ 250µA	41.9nC @ 10V	2026pF @ 30V	2.6W	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-PowerTDFN	PowerDI5060-8
CSD87331Q3D	Texas Instruments	MOSFET 2N-CH 30V 15A 8SON	в производстве	2 N-Channel (Half Bridge)	Standard	30V	15A	-	2.1V @ 250µA	3.2nC @ 4.5V	518pF @ 15V	6W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PowerLDFN	8-LSON (5x6)
FDS6898A	ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7212DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8	в производстве	2 N-Channel (Dual)	Logic Level Gate	30V	4.9A	36 mOhm @ 6.8A, 10V	1.6V @ 250µA	11nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
BUK9K6R2-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D	в производстве	2 N-Channel (Dual)	Logic Level Gate	40V	40A	6 mOhm @ 25A, 10V	2.1V @ 1mA	35.4nC @ 10V	3281pF @ 25V	68W	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	SOT-1205, 8-LFPAK56	LFPAK56D
FDMC7208S	ON Semiconductor	MOSFET 2N-CH 30V 12A/16A PWR33	в производстве	2 N-Channel (Dual)	Logic Level Gate	30V	12A, 16A	9 mOhm @ 12A, 10V	3V @ 250µA	18nC @ 10V	1130pF @ 15V	800mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PowerWDFN	8-Power33 (3x3)
FDS6975	ON Semiconductor	MOSFET 2P-CH 30V 6A 8SOIC	в производстве	2 P-Channel (Dual)	Logic Level Gate	30V	6A	32 mOhm @ 6A, 10V	3V @ 250µA	20nC @ 5V	1540pF @ 15V	900mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
AUIRF7309QTR	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC	в производстве	N and P-Channel	Logic Level Gate	30V	4A, 3A	50 mOhm @ 2.4A, 10V	3V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7900AEDN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8	в производстве	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	6A	26 mOhm @ 8.5A, 4.5V	900mV @ 250µA	16nC @ 4.5V	-	1.5W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SI7949DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8	в производстве	2 P-Channel (Dual)	Logic Level Gate	60V	3.2A	64 mOhm @ 5A, 10V	3V @ 250µA	40nC @ 10V	-	1.5W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI4943CDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 8A 8-SOIC	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	8A	19.2 mOhm @ 8.3A, 10V	3V @ 250µA	62nC @ 10V	1945pF @ 10V	3.1W	-50°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
EPC2106ENGRT	EPC	TRANSISTOR GAN 2N-CH 100V BUMPED DIE	в производстве	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	1.7A	70 mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	Die	Die
EPC2106	EPC	TRANSISTOR GAN SYM 100V BUMPED DIE	в производстве	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	1.7A	70 mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	Die	Die
SI7220DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 3.4A 1212-8	в производстве	2 N-Channel (Dual)	Logic Level Gate	60V	3.4A	60 mOhm @ 4.8A, 10V	3V @ 250µA	20nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
AUIRF7341QTR	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	55V	5.1A	50 mOhm @ 5.1A, 10V	3V @ 250µA	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4943BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 6.3A 8-SOIC	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	6.3A	19 mOhm @ 8.4A, 10V	3V @ 250µA	25nC @ 5V	-	1.1W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN3A04DN8TA	Diodes Incorporated	MOSFET 2N-CH 30V 6.5A 8-SOIC	в производстве	2 N-Channel (Dual)	Logic Level Gate	30V	6.5A	20 mOhm @ 12.6A, 10V	1V @ 250µA (Min)	36.8nC @ 10V	1890pF @ 15V	1.81W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMS3600S	ON Semiconductor	MOSFET 2N-CH 25V 15A/30A 8-PQFN	в производстве	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	25V	15A, 30A	5.6 mOhm @ 15A, 10V	2.7V @ 250µA	27nC @ 10V	1680pF @ 13V	1W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PowerTDFN	Power56
DN2625DK6-G	Microchip Technology	MOSFET 2N-CH 250V 1.1A 8VDFN	в производстве	2 N-Channel (Dual)	Depletion Mode	250V	1.1A	3.5 Ohm @ 1A, 0V	-	7.04nC @ 1.5V	1000pF @ 25V	-	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN (5x5)
ALD1116SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD1106SBL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 14SOIC	в производстве	4 N-Channel, Matched Pair	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	14-SOIC (0.154", 3.90mm Width)	14-SOIC
ALD1105PBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14DIP	в производстве	2 N and 2 P-Channel Matched Pair	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
SLA5074	Sanken	MOSFET 4N-CH 60V 5A 15-SIP	в производстве	4 N-Channel (Half Bridge)	Logic Level Gate	60V	5A	300 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP Exposed Tab, Formed Leads	15-ZIP
ALD1103PBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14DIP	в производстве	2 N and 2 P-Channel Matched Pair	Standard	10.6V	40mA, 16mA	75 Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
SLA5085	Sanken	MOSFET 5N-CH 60V 10A 12-SIP	устарелый	5 N-Channel, Common Source	Logic Level Gate	60V	10A	220 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP w/fin
EPC2104ENGRT	EPC	MOSFET 2NCH 100V 23A DIE	в производстве	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	23A	6.3 mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	Die	Die
SLA5073	Sanken	MOSFET 6N-CH 60V 5A 15-SIP	в производстве	6 N-Channel (3-Phase Bridge)	Logic Level Gate	60V	5A	300 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	15-SIP Exposed Tab, Formed Leads	15-ZIP
SMA5125	Sanken	MOSFET 3N/3P-CH 60V 10A 12-SIP	устарелый	3 N and 3 P-Channel (3-Phase Bridge)	Standard	60V	10A	140 mOhm @ 5A, 4V	2V @ 250µA	-	460pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP	12-SIP
SLA5064	Sanken	MOSFET 3N/3P-CH 60V 10A 12-SIP	в производстве	3 N and 3 P-Channel (3-Phase Bridge)	Logic Level Gate	60V	10A	140 mOhm @ 5A, 4V	-	-	460pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP w/fin
TC8020K6-G	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN	в производстве	6 N and 6 P-Channel	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	56-VFQFN Exposed Pad	56-QFN (8x8)
APTM50HM75STG	Microsemi Corporation	MOSFET 4N-CH 500V 46A SP4	в производстве	4 N-Channel (H-Bridge)	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM20AM04FG	Microsemi Corporation	MOSFET 2N-CH 200V 372A SP6	в производстве	2 N-Channel (Half Bridge)	Standard	200V	372A	5 mOhm @ 186A, 10V	5V @ 10mA	560nC @ 10V	28900pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100A13SCG	Microsemi Corporation	MOSFET 2N-CH 1000V 65A SP6	в производстве	2 N-Channel (Half Bridge)	Standard	1000V (1kV)	65A	156 mOhm @ 32.5A, 10V	5V @ 6mA	562nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SSM6N43FU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A US6	в производстве	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	500mA	630 mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	200mW	150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	US6
FC6546010R	Panasonic Electronic Components	MOSFET 2N-CH 60V 0.1A SMINI6-F3	в производстве	2 N-Channel (Dual)	Logic Level Gate	60V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	150mW	150°C (TJ)	SMD Поверхностный монтаж	6-SMD, Flat Leads	SMini6-F3-B
NVTJD4001NT1G	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SC-88	в производстве	2 N-Channel (Dual)	Standard	30V	250mA	1.5 Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
2N7002VA	ON Semiconductor	MOSFET 2N-CH 60V 0.28A SOT563F	в производстве	2 N-Channel (Dual)	Logic Level Gate	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	SOT-563F
MCMNP517-TP	Micro Commercial Co	MOSFET N/P-CH 12V 6A/4.1A	в производстве	N and P-Channel	Standard	12V	6A, 4.1A	24 mOhm @ 6A, 10V	1V @ 250µA	12nC @ 10V	630pF @ 10V	-	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	DFN2020-6U

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