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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
EMH2418R-TL-H
 ON Semiconductor MOSFET 2N-CH 24V 9A EMH8 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive24V9A15 mOhm @ 4A, 4.5V1.3V @ 1mA4.4nC @ 4.5V
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1.3W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadSOT-383FL, EMH8
NTLUD3A260PZTBG
 ON Semiconductor MOSFET 2P-CH 20V 1.3A UDFN6 в производстве2 P-Channel (Dual)Logic Level Gate20V1.3A200 mOhm @ 2A, 4.5V1V @ 250µA4.2nC @ 4.5V300pF @ 10V500mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UFDFN Exposed Pad6-UDFN (1.6x1.6)
DMP2065UFDB-7
 Diodes Incorporated MOSFET 2 P-CH 20V 4.5A DFN2020-6 в производстве2 P-Channel (Dual)Standard20V4.5A (Ta)50 mOhm @ 2A, 4.5V1V @ 250µA9.1nC @ 4.5V752pF @ 15V1.54W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
TSM9926DCS RLG
 Taiwan Semiconductor Corporation MOSFET 2 N-CHANNEL 20V 6A 8SOP в производстве2 N-Channel (Dual)Standard20V6A (Tc)30 mOhm @ 6A, 10V600mV @ 250µA7.1nC @ 4.5V562pF @ 8V1.6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
SI5922DU-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 30V 6A POWERPAK в производстве2 N-Channel (Dual)Standard30V6A (Tc)19.2 mOhm @ 5A, 10V2.2V @ 250µA7.1nC @ 4.5V765pF @ 15V10.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
PMDPB95XNE2X
 Nexperia USA Inc. MOSFET 2 N-CH 30V 2.7A 6HUSON в производстве2 N-Channel (Dual)Standard30V2.7A (Ta)99 mOhm @ 2.8A, 4.5V1.25V @ 250µA4.5nC @ 4.5V258pF @ 15V510mW (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed Pad6-HUSON (2x2)
MCQ4503-TP
 Micro Commercial Co NP-CHANNEL MOSFET SOP-8 PACKAG в производствеN and P-Channel
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30V6.3A, 8.6A36 mOhm @ 6A, 10V3V @ 250µA20nC @ 4.5V1380pF @ 25V1.4W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMC1030UFDBQ-7
 Diodes Incorporated MOSFET N/P-CH 12V 5.1A UDFN2020 в производствеN and P-Channel ComplementaryStandard12V5.1A34 mOhm @ 4.6A, 4.5V1V @ 250µA23.1nC @ 10V1003pF @ 6V1.36W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
ECH8657-TL-H
 ON Semiconductor MOSFET 2N-CH 35V 4.5A ECH8 в производстве2 N-Channel (Dual)Logic Level Gate35V4.5A59 mOhm @ 2A, 10V
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4.5nC @ 10V230pF @ 20V1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
DMN2036UCB4-7
 Diodes Incorporated MOSFETN-CHAN 24V X2-WLB1616-4 в производстве2 N-Channel (Dual) Common DrainStandard
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12.6nC @ 4.5V
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1.45W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-XFBGA, WLBGA
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ECH8655R-TL-H
 ON Semiconductor MOSFET 2N-CH 24V 9A ECH8 в производстве2 N-Channel (Dual)Logic Level Gate24V9A17 mOhm @ 4.5A, 4.5V
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16.8nC @ 10V
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1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
DMN2022UNS-7
 Diodes Incorporated MOSFET 2 N-CH 20V POWERDI3333-8 в производстве2 N-Channel (Dual) Common DrainStandard20V10.7A (Ta)10.8 mOhm @ 4A, 4.5V1V @ 250µA20.3nC @ 4.5V1870pF @ 10V1.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPowerDI3333-8
TSM6866SDCA RVG
 Taiwan Semiconductor Corporation MOSFET 2 N-CH 20V 6A 8TSSOP в производстве2 N-Channel (Dual)Standard20V6A (Ta)30 mOhm @ 6A, 4.5V600mV @ 250µA5nC @ 4.5V565pF @ 8V1.6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
TSM4953DCS RLG
 Taiwan Semiconductor Corporation MOSFET 2 P-CH 30V 4.9A 8SOP в производстве2 P-Channel (Dual)Standard30V4.9A (Ta)60 mOhm @ 4.9A, 10V3V @ 250µA28nC @ 10V745pF @ 15V2.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
IRLHS6276TRPBF
 Infineon Technologies MOSFET 2N-CH 20V 4.5A PQFN в производстве2 N-Channel (Dual)Logic Level Gate20V4.5A45 mOhm @ 3.4A, 4.5V1.1V @ 10µA3.1nC @ 4.5V310pF @ 10V1.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VQFN6-PQFN (2x2)
TSM6502CR RLG
 Taiwan Semiconductor Corporation MOSFET N/P-CH 60V 24A/18A 8PDFN в производствеN and P-ChannelStandard60V24A (Tc), 18A (Tc)34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V2.5V @ 250µA10.3nC @ 4.5V, 9.5nC @ 4.5V1159pF @ 30V, 930pF @ 30V40W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-PDFN (5x6)
UT6J3TCR
 Rohm Semiconductor -20V PCHPCH POWER MOSFET устарелый2 P-Channel (Dual)
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20V3A85 mOhm @ 3A, 4.5V1V @ 1mA8.5nC @ 4.5V2000pF @ 10V2W150°C (TJ)SMD Поверхностный монтаж6-PowerUDFNHUML2020L8
UT6K3TCR
 Rohm Semiconductor 30V NCHNCH MIDDLE POWER MOSFET в производстве2 N-Channel (Dual)
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30V5.5A42 mOhm @ 5A, 4.5V1.5V @ 1mA4nC @ 4.5V450pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-PowerUDFNHUML2020L8
SI5948DU-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 40V 6A POWERPAK в производстве2 N-Channel (Dual)Standard40V6A (Tc)82 mOhm @ 5A, 10V2.5V @ 250µA2.6nC @ 4.5V165pF @ 20V7W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
TSM9933DCS RLG
 Taiwan Semiconductor Corporation MOSFET 2 P-CH 20V 4.7A 8SOP в производстве2 P-Channel (Dual)Standard20V4.7A (Tc)60 mOhm @ 4.7A, 4.5V1.4V @ 250µA8.5nC @ 4.5V640pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
TSM6968SDCA RVG
 Taiwan Semiconductor Corporation MOSFET 2 N-CH 20V 6.5A 8TSSOP в производстве2 N-Channel (Dual)Standard20V6.5A (Ta)22 mOhm @ 6.5A, 4.5V1V @ 250µA15nC @ 4.5V950pF @ 10V1.04W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
IRFHS9351TRPBF
 Infineon Technologies MOSFET 2P-CH 30V 2.3A PQFN в производстве2 P-Channel (Dual)Logic Level Gate30V2.3A170 mOhm @ 3.1A, 10V2.4V @ 10µA3.7nC @ 10V160pF @ 25V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VQFN Exposed Pad6-PQFN (2x2)
TSM4936DCS RLG
 Taiwan Semiconductor Corporation MOSFET 2 N-CH 30V 5.9A 8SOP в производстве2 N-Channel (Dual)Standard30V5.9A (Ta)36 mOhm @ 5.9A, 10V3V @ 250µA13nC @ 10V610pF @ 15V3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
VEC2315-TL-W
 ON Semiconductor MOSFET 2P-CH 60V 2.5A VEC8 в производстве2 P-Channel (Dual)Logic Level Gate, 4V Drive60V2.5A137 mOhm @ 1.5A, 10V2.6V @ 1mA11nC @ 10V420pF @ 20V1W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadSOT-28FL/VEC8
TSM680P06DPQ56 RLG
 Taiwan Semiconductor Corporation MOSFET 2 P-CH 60V 12A 8PDFN в производстве2 P-Channel (Dual)Standard60V12A (Tc)68 mOhm @ 6A, 10V2.5V @ 250µA16.4nC @ 10V870pF @ 30V3.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-PDFN (5x6)
UT6JA2TCR
 Rohm Semiconductor -30V PCHPCH MIDDLE POWER MOSFET в производстве2 P-Channel (Dual)
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30V4A70 mOhm @ 4A, 10V2.5V @ 1mA6.7nC @ 10V305pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-PowerUDFNHUML2020L8
SIZ346DT-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 17/30A 8POWER33 в производстве2 N-Channel (Dual)Standard30V17A (Tc), 30A (Tc)28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V2.2V @ 250µA, 2.4V @ 250µA5nC @ 4.5V, 9nC @ 4.5V325pF @ 15V, 650pF @ 15V16W, 16.7W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-Power33 (3x3)
DMN6022SSD-13
 Diodes Incorporated MOSFET BVDSS 41V 60V SO-8 в производстве2 N-Channel (Dual)Standard60V6A (Ta), 14A (Tc)29 mOhm @ 5A, 10V3V @ 250µA32nC @ 10V2110pF @ 30V1.2W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
ECH8663R-TL-H
 ON Semiconductor MOSFET 2N-CH 30V 8A ECH8 в производстве2 N-Channel (Dual)Logic Level Gate30V8A20.5 mOhm @ 4A, 4.5V
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12.3nC @ 4.5V
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1.5W150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
ECH8659-TL-W
 ON Semiconductor MOSFET 2N-CH 30V 7A ECH8 в производстве2 N-Channel (Dual)Logic Level Gate, 4V Drive30V7A24 mOhm @ 3.5A, 10V2.6V @ 1mA11.8nC @ 10V710pF @ 10V1.3W150°C (TJ)
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8-SMD, Flat LeadSOT-28FL/ECH8
SI5515CDC-T1-E3
 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8 в производствеN and P-ChannelLogic Level Gate20V4A (Tc)36 mOhm @ 6A, 4.5V800mV @ 250µA11.3nC @ 5V632pF @ 10V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead1206-8 ChipFET™
DMG4822SSDQ-13
 Diodes Incorporated MOSFETDUAL N-CHAN 30VSO-8 в производстве2 N-Channel (Dual)Standard30V10A (Ta)21 mOhm @ 8.5A, 10V3V @ 250µA5nC @ 4.5V478.9pF @ 16V1.42W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
NVMFD5C478NLT1G
 ON Semiconductor 40V 14.5 MOHM T8 S08FL DU в производстве2 N-Channel (Dual)Standard40V10.5A (Ta), 29A (Tc)14.5 mOhm @ 7.5A, 10V2.2V @ 20µA8.1nC @ 10V420pF @ 25V3.1W (Ta), 23W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
SIZ322DT-T1-GE3
 Vishay Siliconix MOSFET 2 N-CH 25V 30A 8-POWER33 в производстве2 N-Channel (Dual)Standard25V30A (Tc)6.35 mOhm @ 15A, 10V2.4V @ 250µA20.1nC @ 10V950pF @ 12.5V16.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-Power33 (3x3)
SIZ320DT-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 25V 30/40A 8POWER33 в производстве2 N-Channel (Dual)Standard25V30A (Tc), 40A (Tc)8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V2.4V @ 250µA8.9nC @ 4.5V, 11.9nC @ 4.5V660pF @ 12.5V, 1370pF @ 12.5V16.7W, 31W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-Power33 (3x3)
BUK7K52-60EX
 Nexperia USA Inc. MOSFET 2N-CH 60V 15.4A LFPAK в производстве2 N-Channel (Dual)Standard60V15.4A45 mOhm @ 5A, 10V4V @ 1mA9.2nC @ 10V535pF @ 25V32W-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-1205, 8-LFPAK56LFPAK56D
SI4946CDY-T1-GE3
 Vishay Siliconix MOSFET N-CHAN DUAL 60V SO-8 в производстве2 N-Channel (Dual)Standard60V5.2A (Ta), 6.1A (Tc)40.9 mOhm @ 5.2A, 10V3V @ 250µA10nC @ 10V350pF @ 30V2W (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SP8K52FRATB
 Rohm Semiconductor 4V DRIVE NCHNCH MOSFET в производстве2 N-Channel (Dual)Standard100V3A (Ta)170 mOhm @ 3A, 10V2.5V @ 1mA8.5nC @ 5V610pF @ 25V2W150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
NVMFD5C680NLWFT1G
 ON Semiconductor MOSFET 2N-CH 60V 26A S08FL в производстве2 N-Channel (Dual)Standard60V7.5A (Ta), 26A (Tc)28 mOhm @ 5A, 10V2.2V @ 13µA2nC @ 4.5V350pF @ 25V3W (Ta), 19W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5C466NLT1G
 ON Semiconductor MOSFET 2N-CH 40V 52A S08FL в производстве2 N-Channel (Dual)Standard40V14A (Ta), 52A (Tc)7.4 mOhm @ 10A, 10V2.2V @ 30µA7nC @ 4.5V997pF @ 25V3W (Ta), 40W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
SP8K33FRATB
 Rohm Semiconductor 4V DRIVE NCHNCH MOSFET CORRESP в производстве2 N-Channel (Dual)Standard60V5A (Ta)48 mOhm @ 5A, 10V2.5V @ 1mA12nC @ 5V620pF @ 10V2W150°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
NTMFD4C20NT1G
 ON Semiconductor MOSFET 2N-CH 30V SO8FL в производстве2 N-Channel (Dual)Standard30V9.1A, 13.7A7.3 mOhm @ 10A, 10V2.1V @ 250µA9.3nC @ 4.5V970pF @ 15V1.09W, 1.15W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SQJB00EP-T1_GE3
 Vishay Siliconix MOSFET 2 N-CH 60V POWERPAK SO8 в производстве2 N-Channel (Dual)Standard60V30A (Tc)13 mOhm @ 10A, 10V3.5V @ 250µA35nC @ 10V1700pF @ 25V48W-55°C ~ 175°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
NVMFD5C672NLT1G
 ON Semiconductor MOSFET 2N-CH 60V 49A S08FL в производстве2 N-Channel (Dual)Standard60V12A (Ta), 49A (Tc)11.9 mOhm @ 10A, 10V2.2V @ 30µA5.7nC @ 4.5V793pF @ 25V3.1W (Ta), 45W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
TSM4925DCS RLG
 Taiwan Semiconductor Corporation MOSFET 2 P-CH 30V 7.1A 8SOP в производстве2 P-Channel (Dual)Standard30V7.1A (Ta)25 mOhm @ 7.1A, 10V3V @ 250µA33nC @ 10V1900pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
BSZ0909NDXTMA1
 Infineon Technologies MOSFET 2 N-CH 30V 20A WISON-8 в производстве2 N-Channel (Dual)Logic Level Gate, 4.5V Drive30V20A (Tc)18 mOhm @ 9A, 10V2V @ 250µA2.6nC @ 4.5V360pF @ 15V17W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-WISON-8
FDMC9430L-F085
 ON Semiconductor MOSFET 2 N-CHANNEL 40V 12A 8MLP в производстве2 N-Channel (Dual)Standard40V12A8 mOhm @ 12A, 10V3V @ 250µA22nC @ 10V984pF @ 20V11.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-MLP (3x3)
NVMFD5C672NLWFT1G
 ON Semiconductor MOSFET 2N-CH 60V 49A S08FL в производстве2 N-Channel (Dual)Standard60V12A (Ta), 49A (Tc)11.9 mOhm @ 10A, 10V2.2V @ 30µA5.7nC @ 4.5V793pF @ 25V3.1W (Ta), 45W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual)
SP8K24FRATB
 Rohm Semiconductor 4V DRIVE NCHNCH MOSFET CORRESP в производстве2 N-Channel (Dual)Standard45V6A (Ta)25 mOhm @ 6A, 10V2.5V @ 1mA21.6nC @ 5V1400pF @ 10V2W150°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
SI4900DY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V5.3A58 mOhm @ 4.3A, 10V3V @ 250µA20nC @ 10V665pF @ 15V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
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