Транзисторы - полевые транзисторы, МОП-транзисторы - массивы - Дискретный полупроводник - ALD111933SAL IRFI4020H-117P ALD110908ASAL ALD1101PAL - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Функция FET	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Входная емкость (Ciss) (Макс.) @ Vds	Мощность - макс.	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
ALD111933SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	-	500 Ohm @ 5.9V	3.35V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRFI4020H-117P	Infineon Technologies	MOSFET 2N-CH 200V 9.1A TO-220FP	в производстве	2 N-Channel (Dual)	Standard	200V	9.1A	100 mOhm @ 5.5A, 10V	4.9V @ 100µA	29nC @ 10V	1240pF @ 25V	21W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack	TO-220-5 Full-Pak
ALD110908ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD1101PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
ALD1102PAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8DIP	в производстве	2 P-Channel (Dual) Matched Pair	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
ALD1101SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD114835SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC	в производстве	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	540 Ohm @ 0V	3.45V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SLA5065	Sanken	MOSFET 4N-CH 60V 7A 15-SIP	в производстве	4 N-Channel	Standard	60V	7A	100 mOhm @ 3.5A, 10V	2V @ 250µA	-	660pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP Exposed Tab, Formed Leads	15-ZIP
SLA5068-LF830	Sanken	MOSFET 6N-CH 60V 7A 15-SIP	в производстве	6 N-Channel (3-Phase Bridge)	Standard	60V	7A	100 mOhm @ 3.5A, 10V	2V @ 250µA	-	660pF @ 10V	5W	150°C (TJ)	Through Hole	15-SIP Exposed Tab, Formed Leads	15-ZIP
SLA5086	Sanken	MOSFET 5P-CH 60V 5A 12-SIP	устарелый	5 P-Channel, Common Source	Logic Level Gate	60V	5A	220 mOhm @ 3A, 10V	2V @ 250µA	-	790pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP w/fin
ALD1101ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC	в производстве	2 N-Channel (Dual) Matched Pair	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FTCO3V455A1	ON Semiconductor	MOSFET 6N-CH 40V 150A MODULE	в производстве	6 N-Channel (3-Phase Bridge)	Logic Level Gate	40V	150A	1.66 mOhm @ 80A, 10V	-	-	-	115W	175°C (TJ)	Through Hole	19-PowerDIP Module	Module
EM5K5T2R	Rohm Semiconductor	MOSFET 2N-CH 30V 0.3A EMT5	устарелый	2 N-Channel (Dual)	Standard	30V	300mA	600 mOhm @ 300mA, 4.5V	-	-	-	150mW	-	SMD Поверхностный монтаж	6-SMD (5 Leads), Flat Lead	EMT5
SSM6L35FE,LM	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6	в производстве	N and P-Channel	Logic Level Gate	20V	180mA, 100mA	3 Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	150mW	150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	ES6 (1.6x1.6)
EM6M1T2R	Rohm Semiconductor	MOSFET N/P-CH 30V/20V EMT6	устарелый	N and P-Channel	Logic Level Gate	30V, 20V	100mA, 200mA	8 Ohm @ 10mA, 4V	-	0.9nC @ 4.5V	13pF @ 5V	150mW	150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	EMT6
CMLDM7003 TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563	в производстве	2 N-Channel (Dual)	Standard	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	SOT-563
CMLDM5757 TR	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	175pF @ 16V	350mW	-65°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	SOT-563
SSM6P47NU,LF(T	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-2Y1A	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	4A	95 mOhm @ 1.5A, 4.5V	1V @ 1mA	4.6nC @ 4.5V	290pF @ 10V	1W	150°C (TJ)	SMD Поверхностный монтаж	6-WDFN Exposed Pad	6-UDFN (2x2)
SH8K1TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 5A SOP8	устарелый	2 N-Channel (Dual)	Logic Level Gate	30V	5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	5.5nC @ 5V	230pF @ 10V	2W	150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOP
FC8V22040L	Panasonic Electronic Components	MOSFET 2N-CH 24V 8A WMINI8-F1	в производстве	2 N-Channel (Dual)	Logic Level Gate	24V	8A	15 mOhm @ 4A, 4.5V	1.5V @ 1mA	-	-	1W	-40°C ~ 85°C (TJ)	SMD Поверхностный монтаж	8-SMD, Flat Lead	WMini8-F1
EPC2108ENGRT	EPC	TRANSISTOR GAN 3N-CH BUMPED DIE	в производстве	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	9-VFBGA	9-BGA (1.35x1.35)
SC8673040L	Panasonic Electronic Components	MOSFET 2N-CH 30V 16A/46A 8-HSO	в производстве	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	30V	16A, 46A	10 mOhm @ 8A, 10V	3V @ 5.85mA	6.3nC @ 4.5V	1092pF @ 10V	1.7W, 2.5W	150°C (TJ)	SMD Поверхностный монтаж	8-PowerSMD, Flat Leads	HSO8-F3-B
SMA5132	Sanken	MOSFET 3N/3P-CH 500V 1.5A 12-SIP	в производстве	3 N and 3 P-Channel (3-Phase Bridge)	Standard	500V	1.5A	-	-	-	-	-	-	Through Hole	12-SIP	12-SIP
SLA5061	Sanken	MOSFET 3N/3P-CH 60V 10A/6A 12SIP	в производстве	3 N and 3 P-Channel (3-Phase Bridge)	Logic Level Gate	60V	10A, 6A	140 mOhm @ 5A, 4V	-	-	460pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP w/fin
SLA5201	Sanken	MOSFET 3N/3P-CH 600V 7A 15-SIP	в производстве	3 N and 3 P-Channel (3-Phase Bridge)	Standard	600V	7A	-	-	-	-	-	-	Through Hole	15-SIP Exposed Tab, Formed Leads	15-ZIP
APTM100H45SCTG	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP4	в производстве	4 N-Channel (H-Bridge)	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
DMN63D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363	в производстве	2 N-Channel (Dual)	Standard	30V	220mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	SOT-363
SSM6N37FU,LF	Toshiba Semiconductor and Storage	MOSFET 2 N-CHANNEL 20V 250MA US6	в производстве	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	250mA (Ta)	2.2 Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	300mW	150°C	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	US6
DMN601DWKQ-7	Diodes Incorporated	MOSFET N-CHAN 41V 60V SOT363	в производстве	2 N-Channel (Dual)	Standard	60V	305mA (Ta)	2 Ohm @ 500mA, 10V	2.5V @ 1mA	0.304nC @ 4.5V	50pF @ 25V	200mW	-65°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	SOT-363
NX7002BKXBZ	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.26A 6DFN	в производстве	2 N-Channel (Dual)	Logic Level Gate	60V	260mA	2.8 Ohm @ 200mA, 10V	2.1V @ 250µA	1nC @ 10V	23.6pF @ 10V	285mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-XFDFN Exposed Pad	6-DFN (1.1x1)
SI1028X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V SC89-6	в производстве	2 N-Channel (Dual)	Logic Level Gate	30V	-	650 mOhm @ 500mA, 10V	2.5V @ 250µA	2nC @ 10V	16pF @ 15V	220mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	SC-89-6
UM6K31NFHATCN	Rohm Semiconductor	2.5V DRIVE NCHNCH MOSFET	в производстве	2 N-Channel (Dual)	Standard	60V	250mA (Ta)	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	UMT6
SSM6N35AFU,LF	Toshiba Semiconductor and Storage	MOSFET 2 N-CHANNEL 20V 250MA US6	в производстве	2 N-Channel (Dual)	Standard	20V	250mA (Ta)	1.1 Ohm @ 150mA, 4.5V	1V @ 100µA	0.34nC @ 4.5V	36pF @ 10V	285mW (Ta)	150°C	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	US6
EFC4626R-TR	ON Semiconductor	MOSFET 2N-CH 24V 5A CSP4	в производстве	2 N-Channel (Dual) Common Drain	Logic Level Gate, 2.5V Drive	-	-	-	-	7.5nC @ 4.5V	-	1.4W	150°C (TJ)	SMD Поверхностный монтаж	4-XFBGA	-
PMDXB600UNELZ	Nexperia USA Inc.	20 V DUAL N-CHANNEL TRENCH MOSF	в производстве	2 N-Channel (Dual)	Standard	20V	600mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	380mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-XFDFN Exposed Pad	DFN1010B-6
PMDXB1200UPEZ	Nexperia USA Inc.	MOSFET 2P-CH 30V 0.41A 6DFN	в производстве	2 P-Channel (Dual)	Standard	30V	410mA	1.4 Ohm @ 410mA, 4.5V	950mV @ 250µA	1.2nC @ 4.5V	43.2pF @ 15V	285mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-XFDFN Exposed Pad	DFN1010B-6
PMDXB550UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.59A 6DFN	в производстве	2 N-Channel (Dual)	Standard	30V	590mA	670 mOhm @ 590mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V	30.3pF @ 15V	285mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-XFDFN Exposed Pad	DFN1010B-6
SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.72A ES6	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	720mA	300 mOhm @ 400mA, 4.5V	1V @ 1mA	1.76nC @ 4.5V	110pF @ 10V	150mW	150°C (TJ)	SMD Поверхностный монтаж	SOT-563, SOT-666	ES6 (1.6x1.6)
BSS138DWQ-7	Diodes Incorporated	MOSFET 2NCH 50V 200MA SOT363	в производстве	2 N-Channel (Dual)	Standard	50V	200mA	3.5 Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-TSSOP, SC-88, SOT-363	SOT-363
DMC31D5UDJ-7B	Diodes Incorporated	MOSFET N/P-CH 30V SOT963	в производстве	N and P-Channel	Logic Level Gate	30V	220mA, 200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-963	SOT-963
CPH6636R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 6A CPH6	устарелый	2 N-Channel (Dual) Common Drain	Logic Level Gate, 2.5V Drive	24V	6A	20 mOhm @ 3A, 4.5V	-	3nC @ 4.5V	-	900mW	150°C (TJ)	SMD Поверхностный монтаж	SOT-23-6 Thin, TSOT-23-6	6-CPH
EFC4619R-TR	ON Semiconductor	MOSFET 2N-CH EFCP	в производстве	2 N-Channel (Dual)	Logic Level Gate, 2.5V Drive	-	-	-	-	21.7nC @ 4.5V	-	1.6W	150°C (TJ)	SMD Поверхностный монтаж	4-XFBGA, FCBGA	EFCP1616-4CE-022
DMC2004LPK-7	Diodes Incorporated	MOSFET N/P-CH 20V 6-DFN	в производстве	N and P-Channel	Logic Level Gate	20V	750mA, 600mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	500mW	-65°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-SMD, No Lead	X1-DFN1612-6
MCH6660-TL-W	ON Semiconductor	MOSFET N/P-CH 20V 2A/1.5A MCPH6	в производстве	N and P-Channel	Logic Level Gate, 1.8V Drive	20V	2A, 1.5A	136 mOhm @ 1A, 4.5V	1.3V @ 1mA	1.8nC @ 4.5V	128pF @ 10V	800mW	150°C (TJ)	SMD Поверхностный монтаж	6-SMD, Flat Leads	6-MCPH
EFC6605R-TR	ON Semiconductor	MOSFET 2N-CH EFCP	в производстве	2 N-Channel (Dual)	Logic Level Gate, 2.5V Drive	-	-	-	-	19.8nC @ 4.5V	-	1.6W	150°C (TJ)	SMD Поверхностный монтаж	6-XFBGA	6-EFCP (1.9x1.46)
TSM2537CQ RFG	Taiwan Semiconductor Corporation	MOSFET N/P-CH 20V 11.6A/9A 6TDFN	в производстве	N and P-Channel	Standard	20V	11.6A (Tc), 9A (Tc)	30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V	1V @ 250µA	9.1nC @ 4.5V, 9.8nC @ 4.5V	677pF @ 10V, 744pF @ 10V	6.25W	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-TDFN (2x2)
SSM6N815R,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 2A 6TSOPF	в производстве	2 N-Channel (Dual)	Logic Level Gate, 4V Drive	100V	2A (Ta)	103 mOhm @ 2A, 10V	2.5V @ 100µA	3.1nC @ 4.5V	290pF @ 15V	1.8W (Ta)	150°C	SMD Поверхностный монтаж	6-SMD, Flat Leads	6-TSOP-F
TSM250N02DCQ RFG	Taiwan Semiconductor Corporation	MOSFET 2 N-CH 20V 5.8A 6TDFN	в производстве	2 N-Channel (Dual)	Standard	20V	5.8A (Tc)	25 mOhm @ 4A, 4.5V	800mV @ 250µA	7.7nC @ 4.5V	775pF @ 10V	620mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-TDFN (2x2)
PMDPB70XPE,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 3A 6HUSON	в производстве	2 P-Channel (Dual)	Logic Level Gate	20V	3A	79 mOhm @ 2A, 4.5V	1.25V @ 250µA	7.5nC @ 4.5V	600pF @ 10V	515mW	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-UDFN Exposed Pad	DFN2020-6
TSM500P02DCQ RFG	Taiwan Semiconductor Corporation	MOSFET 2 P-CH 20V 4.7A 6TDFN	в производстве	2 P-Channel (Dual)	Standard	20V	4.7A (Tc)	50 mOhm @ 3A, 4.5V	800mV @ 250µA	9.6nC @ 4.5V	1230pF @ 10V	620mW	-50°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-TDFN (2x2)

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы