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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1.5A SMA |
в производстве | Schottky | 40V | 1.5A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 134pF @ 10V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | SMA | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO214AB |
в производстве | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO214AB |
в производстве | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 30V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
в производстве | Standard | 600V | 5A | 1.85V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 15A TO277A |
в производстве | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AB |
в производстве | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | SMD Поверхностный монтаж | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
в производстве | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
в производстве | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
в производстве | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO252AA |
в производстве | Schottky | 60V | 5.5A | 570mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 60V | 360pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
в производстве | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A TO247AC |
в производстве | Standard | 600V | 25A | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
в производстве | Standard | 1200V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
в производстве | Standard | 1200V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
в производстве | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
в производстве | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 70A DO203AB |
в производстве | Standard | 1600V | 70A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
в производстве | Standard | 1200V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A D-55 |
в производстве | Standard | 600V | 40A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 600V | - | Chassis Mount | D-55 T-Module | D-55 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 275A HALFPAK |
в производстве | Standard | 400V | 275A | 2V @ 270A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 3mA @ 400V | - | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 240A D-67 |
в производстве | Schottky | 100V | 240A | 950mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 100V | 5500pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 300A DO9 |
в производстве | Standard, Reverse Polarity | 600V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 600V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 300A DO205AB |
в производстве | Standard | 600V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 600V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 300MA DO35 |
в производстве | Standard | 75V | 300mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
в производстве | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 150MA DO35 |
в производстве | Standard | 100V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA DO35 |
в производстве | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA DO35 |
в производстве | Standard | 75V | 150mA | 720mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 2A DO35 |
в производстве | Standard | 75V | 2A | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 5µA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 300MA DO35 |
в производстве | Standard | 50V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
в производстве | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100µA @ 100V | - | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204 |
в производстве | Standard | 1000V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO204AL |
в производстве | Standard | 400V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AL |
в производстве | Standard | 200V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 250MA SOD80 |
в производстве | Standard | 50V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 50V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 250MA SOD80 |
в производстве | Standard | 200V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
в производстве | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100µA @ 100V | - | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
в производстве | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-123 | SOD-123 | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD123 |
в производстве | Standard | 75V | 150mA | 720mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | - | SMD Поверхностный монтаж | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA DO35 |
в производстве | Schottky | 60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
в производстве | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
в производстве | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
в производстве | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHTKY 30V 500MA CLP10062L |
в производстве | Schottky | 30V | 500mA | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 30V | 140pF @ 0V, 1MHz | SMD Поверхностный монтаж | 0402 (1006 Metric) | CLP1006-2L | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V DO35 |
в производстве | Schottky | 30V | - | 600mV @ 200mA | - | 10ns | 5µA @ 20V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GPP 600V 1.0A DO-214AC |
в производстве | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 6pF @ 4V, 1MHz | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V DO35 |
в производстве | Schottky | 40V | - | 600mV @ 200mA | - | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
