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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
FDME1024NZT
 ON Semiconductor MOSFET 2N-CH 20V 3.8A 6-MICROFET в производстве2 N-Channel (Dual)Logic Level Gate20V3.8A66 mOhm @ 3.4A, 4.5V1V @ 250µA4.2nC @ 4.5V300pF @ 10V600mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UFDFN Exposed Pad6-MicroFET (1.6x1.6)
AO4805
 Alpha & Omega Semiconductor Inc. MOSFET 2P-CH 30V 9A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V9A19 mOhm @ 8A, 10V2.8V @ 250µA39nC @ 10V2600pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
FDS4897C
 ON Semiconductor MOSFET N/P-CH 40V 8-SOIC в производствеN and P-ChannelLogic Level Gate40V6.2A, 4.4A29 mOhm @ 6.2A, 10V3V @ 250µA20nC @ 10V760pF @ 20V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
AOD609
 Alpha & Omega Semiconductor Inc. MOSFET N/P-CH 40V 12A TO252-4 в производствеN and P-Channel, Common DrainLogic Level Gate40V12A30 mOhm @ 12A, 10V3V @ 250µA10.8nC @ 10V650pF @ 20V2W-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-252-5, DPak (4 Leads + Tab), TO-252ADTO-252-4L
FDS9945
 ON Semiconductor MOSFET 2N-CH 60V 3.5A 8-SO в производстве2 N-Channel (Dual)Logic Level Gate60V3.5A100 mOhm @ 3.5A, 10V3V @ 250µA13nC @ 5V420pF @ 30V1W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
AO4813
 Alpha & Omega Semiconductor Inc. MOSFET 2P-CH 30V 7.1A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V7.1A25 mOhm @ 7.1A, 10V2.5V @ 250µA19nC @ 10V1250pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
IRF7303TRPBF
 Infineon Technologies MOSFET 2N-CH 30V 4.9A 8-SOIC в производстве2 N-Channel (Dual)Standard30V4.9A50 mOhm @ 2.4A, 10V1V @ 250µA25nC @ 10V520pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMA1024NZ
 ON Semiconductor MOSFET 2N-CH 20V 5A 6-MICROFET в производстве2 N-Channel (Dual)Logic Level Gate20V5A54 mOhm @ 5A, 4.5V1V @ 250µA7.3nC @ 4.5V500pF @ 10V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VDFN Exposed Pad6-MicroFET (2x2)
DMC4040SSD-13
 Diodes Incorporated MOSFET N/P-CH 40V 6.8A 8SO в производствеN and P-ChannelLogic Level Gate40V6.8A25 mOhm @ 3A, 10V1.8V @ 250µA37.6nC @ 10V1790pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI4936BDY-T1-E3
 Vishay Siliconix MOSFET 2N-CH 30V 6.9A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V6.9A35 mOhm @ 5.9A, 10V3V @ 250µA15nC @ 10V530pF @ 15V2.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS6982AS
 ON Semiconductor MOSFET 2N-CH 30V 6.3A/8.6A 8-SO в производстве2 N-Channel (Dual)Logic Level Gate30V6.3A, 8.6A28 mOhm @ 6.3A, 10V3V @ 250µA15nC @ 10V610pF @ 10V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF9362TRPBF
 Infineon Technologies MOSFET 2P-CH 30V 8A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V8A21 mOhm @ 8A, 10V2.4V @ 25µA39nC @ 10V1300pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI9945BDY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V5.3A58 mOhm @ 4.3A, 10V3V @ 250µA20nC @ 10V665pF @ 15V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7301TRPBF
 Infineon Technologies MOSFET 2N-CH 20V 5.2A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate20V5.2A50 mOhm @ 2.6A, 4.5V700mV @ 250µA20nC @ 4.5V660pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMB3800N
 ON Semiconductor MOSFET 2N-CH 30V 4.8A MICROFET в производстве2 N-Channel (Dual)Logic Level Gate30V4.8A40 mOhm @ 4.8A, 10V3V @ 250µA5.6nC @ 5V465pF @ 15V750mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-MLP, MicroFET (3x1.9)
SI9926CDY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 20V 8A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate20V8A18 mOhm @ 8.3A, 4.5V1.5V @ 250µA33nC @ 10V1200pF @ 10V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS4935BZ
 ON Semiconductor MOSFET 2P-CH 30V 6.9A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V6.9A22 mOhm @ 6.9A, 10V3V @ 250µA40nC @ 10V1360pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDD8424H
 ON Semiconductor MOSFET N/P-CH 40V 9A/6.5A DPAK в производствеN and P-ChannelLogic Level Gate40V9A, 6.5A24 mOhm @ 9A, 10V3V @ 250µA20nC @ 10V1000pF @ 20V1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252-5, DPak (4 Leads + Tab), TO-252ADTO-252-4L
IPG20N06S4L26ATMA1
 Infineon Technologies MOSFET 2N-CH 60V 20A TDSON-8 в производстве2 N-Channel (Dual)Logic Level Gate60V20A26 mOhm @ 17A, 10V2.2V @ 10µA20nC @ 10V1430pF @ 25V33W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8-4
SI4925DDY-T1-GE3
 Vishay Siliconix MOSFET 2P-CH 30V 8A 8-SOIC в производстве2 P-Channel (Dual)Standard30V8A29 mOhm @ 7.3A, 10V3V @ 250µA50nC @ 10V1350pF @ 15V5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDS8949
 ON Semiconductor MOSFET 2N-CH 40V 6A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate40V6A29 mOhm @ 6A, 10V3V @ 250µA11nC @ 5V955pF @ 20V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7343TRPBF
 Infineon Technologies MOSFET N/P-CH 55V 8-SOIC в производствеN and P-ChannelStandard55V4.7A, 3.4A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7316TRPBF
 Infineon Technologies MOSFET 2P-CH 30V 4.9A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V4.9A58 mOhm @ 4.9A, 10V1V @ 250µA34nC @ 10V710pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI5504BDC-T1-GE3
 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8 в производствеN and P-ChannelLogic Level Gate30V4A, 3.7A65 mOhm @ 3.1A, 10V3V @ 250µA7nC @ 10V220pF @ 15V3.12W, 3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead1206-8 ChipFET™
SI4931DY-T1-E3
 Vishay Siliconix MOSFET 2P-CH 12V 6.7A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate12V6.7A18 mOhm @ 8.9A, 4.5V1V @ 350µA52nC @ 4.5V
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1.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI4931DY-T1-GE3
 Vishay Siliconix MOSFET 2P-CH 12V 6.7A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate12V6.7A18 mOhm @ 8.9A, 4.5V1V @ 350µA52nC @ 4.5V
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1.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7389TRPBF
 Infineon Technologies MOSFET N/P-CH 30V 8-SOIC в производствеN and P-ChannelLogic Level Gate30V
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29 mOhm @ 5.8A, 10V1V @ 250µA33nC @ 10V650pF @ 25V2.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
ZXMHC6A07N8TC
 Diodes Incorporated MOSFET 2N/2P-CH 60V 8-SOIC в производстве2 N and 2 P-Channel (H-Bridge)Logic Level Gate60V1.39A, 1.28A250 mOhm @ 1.8A, 10V3V @ 250µA3.2nC @ 10V166pF @ 40V870mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
SI4909DY-T1-GE3
 Vishay Siliconix MOSFET 2P-CH 40V 8A 8SO в производстве2 P-Channel (Dual)Logic Level Gate40V8A27 mOhm @ 8A, 10V2.5V @ 250µA63nC @ 10V2000pF @ 20V3.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
BSO150N03MDGXUMA1
 Infineon Technologies MOSFET 2N-CH 30V 8A 8DSO в производстве2 N-Channel (Dual)Logic Level Gate30V8A15 mOhm @ 9.3A, 10V2V @ 250µA17nC @ 10V1300pF @ 15V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)PG-DSO-8
IRF7341TRPBF
 Infineon Technologies MOSFET 2N-CH 55V 4.7A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate55V4.7A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI6913DQ-T1-GE3
 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8-TSSOP в производстве2 P-Channel (Dual)Logic Level Gate12V4.9A21 mOhm @ 5.8A, 4.5V900mV @ 400µA28nC @ 4.5V
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830mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
FDS8858CZ
 ON Semiconductor MOSFET N/P-CH 30V 8.6A/7.3A 8-SO в производствеN and P-ChannelLogic Level Gate30V8.6A, 7.3A17 mOhm @ 8.6A, 10V3V @ 250µA24nC @ 10V1205pF @ 15V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7342TRPBF
 Infineon Technologies MOSFET 2P-CH 55V 3.4A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate55V3.4A105 mOhm @ 3.4A, 10V1V @ 250µA38nC @ 10V690pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMC8200S
 ON Semiconductor MOSFET 2N-CH 30V 6A/8.5A 8MLP в производстве2 N-Channel (Dual)Logic Level Gate30V6A, 8.5A20 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-Power33 (3x3)
SI7218DN-T1-E3
 Vishay Siliconix MOSFET 2N-CH 30V 24A 1212-8 в производстве2 N-Channel (Dual)Standard30V24A25 mOhm @ 8A, 10V3V @ 250µA17nC @ 10V700pF @ 15V23W-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SQJ974EP-T1_GE3
 Vishay Siliconix MOSFET 2 N-CH 100V POWERPAK SO8 в производстве2 N-Channel (Dual)Standard100V30A (Tc)25.5 mOhm @ 10A, 10V2.5V @ 250µA30nC @ 10V1050pF @ 25V48W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFNPowerPAK® SO-8 Dual
FQS4901TF
 ON Semiconductor MOSFET 2N-CH 400V 0.45A 8SOP в производстве2 N-Channel (Dual)Standard400V450mA4.2 Ohm @ 225mA, 10V4V @ 250µA7.5nC @ 10V210pF @ 25V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
SI4925BDY-T1-E3
 Vishay Siliconix MOSFET 2P-CH 30V 5.3A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate30V5.3A25 mOhm @ 7.1A, 10V3V @ 250µA50nC @ 10V
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1.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI4946BEY-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 60V 6.5A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V6.5A41 mOhm @ 5.3A, 10V3V @ 250µA25nC @ 10V840pF @ 30V3.7W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI4946BEY-T1-E3
 Vishay Siliconix MOSFET 2N-CH 60V 6.5A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V6.5A41 mOhm @ 5.3A, 10V3V @ 250µA25nC @ 10V840pF @ 30V3.7W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
IRF7329TRPBF
 Infineon Technologies MOSFET 2P-CH 12V 9.2A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate12V9.2A17 mOhm @ 9.2A, 4.5V900mV @ 250µA57nC @ 4.5V3450pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
CSD87588N
 Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB в производстве2 N-Channel (Half Bridge)Logic Level Gate30V25A9.6 mOhm @ 15A, 10V1.9V @ 250µA4.1nC @ 4.5V736pF @ 15V6W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж5-XFLGA5-PTAB (3x2.5)
SI4900DY-T1-E3
 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V5.3A58 mOhm @ 4.3A, 10V3V @ 250µA20nC @ 10V665pF @ 15V3.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
SI4559ADY-T1-E3
 Vishay Siliconix MOSFET N/P-CH 60V 5.3A 8-SOIC в производствеN and P-ChannelLogic Level Gate60V5.3A, 3.9A58 mOhm @ 4.3A, 10V3V @ 250µA20nC @ 10V665pF @ 15V3.1W, 3.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
FDMS9620S
 ON Semiconductor MOSFET 2N-CH 30V 7.5A/10A PWR56 в производстве2 N-Channel (Dual)Logic Level Gate30V7.5A, 10A21.5 mOhm @ 7.5A, 10V3V @ 250µA14nC @ 10V665pF @ 15V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerWDFN8-MLP (5x6), Power56
BSC072N03LDGATMA1
 Infineon Technologies MOSFET 2N-CH 30V 11.5A 8TDSON в производстве2 N-Channel (Dual)Logic Level Gate30V11.5A7.2 mOhm @ 20A, 10V2.2V @ 250µA41nC @ 10V3500pF @ 15V57W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerVDFNPG-TDSON-8 Dual
SI5902BDC-T1-GE3
 Vishay Siliconix MOSFET 2N-CH 30V 4A 1206-8 в производстве2 N-Channel (Dual)Logic Level Gate30V4A65 mOhm @ 3.1A, 10V3V @ 250µA7nC @ 10V220pF @ 15V3.12W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead1206-8 ChipFET™
NDS9945
 ON Semiconductor MOSFET 2N-CH 60V 3.5A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V3.5A100 mOhm @ 3.5A, 10V3V @ 250µA30nC @ 10V345pF @ 25V900mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
CSD88537ND
 Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC в производстве2 N-Channel (Dual)Standard60V15A15 mOhm @ 8A, 10V3.6V @ 250µA18nC @ 10V1400pF @ 30V2.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
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