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Global Power Technologies Group |
MOSFET N-CH 600V 2A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | ±30V | 360pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 2A |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | ±30V | 360pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 650V 1.8A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | ±30V | 353pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 650V 1.8A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | ±30V | 353pF @ 25V | - | 17.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 1.8A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | ±30V | 353pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 650V 1.8A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | ±30V | 353pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 600V 4A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 86.2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 600V 4A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 30.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 4A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 86.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 650V 4A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 642pF @ 25V | - | 98.4W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 650V 4A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 642pF @ 25V | - | 98.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 645pF @ 25V | - | 32.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 645pF @ 25V | - | 98.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 4.2A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4.2A (Tc) | 10V | 2.1 Ohm @ 2.1A, 10V | 5V @ 250µA | 14nC @ 10V | ±30V | 658pF @ 25V | - | 98.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 650V 6.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 6.5A (Tc) | 10V | 1.4 Ohm @ 3.25A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 1072pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 900V 9A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2740pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 9A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2740pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700 mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1660pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 12A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650 mOhm @ 6A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1890pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 18A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 300 mOhm @ 9A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 2880pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 20A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 2880pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 23A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 220 mOhm @ 11.5A, 10V | 5V @ 250µA | 64nC @ 10V | ±30V | 3270pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8 Ohm @ 1.25A, 10V | 4V @ 250µA | 9nC @ 10V | ±30V | 395pF @ 25V | - | 17.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 2.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 900V 2.5A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 4A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 1.85 Ohm @ 2A, 10V | 3.5V @ 250µA | 11nC @ 10V | ±30V | 602pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 4A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 1.85 Ohm @ 2A, 10V | 3.5V @ 250µA | 11nC @ 10V | ±30V | 602pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6 Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 700V 5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.65 Ohm @ 2.5A, 10V | 4V @ 250µA | 23nC @ 10V | ±30V | 1500pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 6.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 6.5A (Tc) | 10V | 1.4 Ohm @ 3.25A, 10V | 4V @ 250µA | 27nC @ 10V | ±30V | 1201pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 900V 7A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1969pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 7A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1969pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 8A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 937pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 8A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 937pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 8A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 937pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 800V 8A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.4 Ohm @ 4A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1921pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400 mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 17.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 9A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 1 Ohm @ 4.5A, 10V | 4V @ 250µA | 27nC @ 10V | ±30V | 1440pF @ 25V | - | 158W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 900V 9A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 65nC @ 10V | ±30V | 2324pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 9.5A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 9.5A (Tc) | 10V | 1.4 Ohm @ 4.75A, 10V | 4V @ 250µA | 65nC @ 10V | ±30V | 2324pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750 mOhm @ 5A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1891pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 800V 9.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Tc) | 10V | 1.05 Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 2336pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 800V 9.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Tc) | 10V | 1.05 Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 2336pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
