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Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | 14 mOhm @ 12.5A, 10V | - | 15nC @ 4.5V | ±20V | 2030pF @ 10V | - | 45W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 7.9 mOhm @ 15A, 10V | - | 11nC @ 4.5V | ±20V | 1730pF @ 10V | - | 15W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 16A 8-SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 7 mOhm @ 8A, 10V | - | 12nC @ 4.5V | ±20V | 1740pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 25A HWSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 6.3 mOhm @ 12.5A, 10V | - | 10.4nC @ 4.5V | ±20V | 1890pF @ 10V | - | 15W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 60V 20A TO-220 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 10V | 48 mOhm @ 10A, 10V | - | 38nC @ 10V | ±20V | 1900pF @ 10V | - | 2W (Ta), 25W (Tc) | 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Isolated Tab |
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Renesas Electronics America |
MOSFET N-CH 30V 50A WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.3 mOhm @ 25A, 10V | - | 25nC @ 4.5V | ±20V | 4720pF @ 10V | - | 45W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 60V 30A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 4.5V, 10V | 12 mOhm @ 15A, 10V | 2.5V @ 1mA | 25nC @ 4.5V | ±20V | 3600pF @ 10V | - | 23W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 10V | 11 mOhm @ 15A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A 5-LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.8 mOhm @ 30A, 10V | - | 32nC @ 4.5V | +16V, -12V | 5000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3.8 mOhm @ 22.5A, 10V | 2.5V @ 1mA | 27nC @ 4.5V | ±20V | 4400pF @ 10V | - | 25W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 8V, 10V | 15 mOhm @ 12.5A, 10V | 6V @ 20mA | 61nC @ 10V | ±20V | 4350pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 55A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 3.3 mOhm @ 27.5A, 10V | 2.5V @ 1mA | 33nC @ 4.5V | ±20V | 5180pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 30A 5LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 4.5V, 10V | 12 mOhm @ 15A, 10V | - | 60nC @ 10V | ±20V | 3520pF @ 10V | - | 25W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 20V 60A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Ta) | 4.5V, 10V | 2.6 mOhm @ 30A, 10V | 2.3V @ 1mA | 54nC @ 4.5V | ±20V | 7750pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 8 mOhm @ 15A, 10V | - | 8nC @ 4.5V | +16V, -12V | 1250pF @ 10V | - | - | - | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 50A 8WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.9 mOhm @ 25A, 10V | 2.5V @ 1mA | 34nC @ 4.5V | ±20V | 5600pF @ 10V | - | 50W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK (3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 40V 75A 8HSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4.8 mOhm @ 37.5A, 10V | 4V @ 250µA | 116nC @ 10V | ±20V | 6450pF @ 25V | - | 1W (Ta), 138W (Tc) | 175°C (TJ) | SMD Поверхностный монтаж | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 600V 30A TO-3PSG |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125 mOhm @ 15A, 10V | - | 39nC @ 10V | +30V, -20V | 2300pF @ 25V | Super Junction | 227.2W (Tc) | 150°C (TJ) | Through Hole | TO-3PSG | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 600V 30A TO220FP |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125 mOhm @ 15A, 10V | - | 39nC @ 10V | +30V, -20V | 2300pF @ 25V | Super Junction | 34.7W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 40V 50A LFPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 3.5 mOhm @ 25A, 10V | 2.5V @ 1mA | 45nC @ 4.5V | ±20V | 6650pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 1500V 4A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Ta) | 15V | 7 Ohm @ 2A, 15V | - | - | ±20V | 1700pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 20V 7A 6SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 19.1 mOhm @ 3.5A, 2.5V | - | 7.9nC @ 10V | ±12V | 870pF @ 10V | - | 2.4W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-HUSON (2x2) | 6-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 12V 7A 6SON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.8V, 4.5V | 59 mOhm @ 3.5A, 1.8V | - | 11.3nC @ 4.5V | ±8V | 1260pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-HUSON (2x2) | 6-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 20V 6A 6SON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 62 mOhm @ 3A, 1.8V | - | 12.5nC @ 4.5V | ±8V | 1240pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-HUSON (2x2) | 6-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 11A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13 mOhm @ 11A, 10V | - | 45nC @ 10V | ±20V | 1750pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 12A 8-SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 11.1 mOhm @ 6A, 10V | - | 6nC @ 4.5V | ±20V | 860pF @ 10V | - | 1.8W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 400V 3A TO92 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | 2.9 Ohm @ 1.5A, 10V | - | 6nC @ 100V | ±30V | 165pF @ 25V | - | 2.54W (Tc) | 150°C (TJ) | Through Hole | TO-92(1) | TO-226-3, TO-92-3 Long Body (Formed Leads) |
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Renesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | 11 mOhm @ 21A, 10V | - | 47nC @ 10V | ±20V | 1760pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 17A 8HWSON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Tc) | 4.5V, 10V | 15.5 mOhm @ 17A, 10V | - | 33.4nC @ 10V | +20V, -25V | 1160pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 8HVSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 5.3 mOhm @ 22A, 10V | - | 50nC @ 10V | ±20V | 2330pF @ 10V | - | 1.5W (Ta), 16W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | - | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 8HVSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 4.6 mOhm @ 24A, 10V | - | 57nC @ 10V | ±20V | 2600pF @ 10V | - | 1.5W (Ta), 16.5W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | - | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 24A 8HWSON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 7.8 mOhm @ 24A, 5V | - | 74nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 4.5V, 10V | 125 mOhm @ 8A, 10V | - | 20nC @ 10V | ±20V | 900pF @ 10V | - | 1W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 30V 20A 8-SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 3.8 mOhm @ 10A, 10V | - | 25nC @ 4.5V | ±20V | 3850pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 400V 3A MP3A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | 2.9 Ohm @ 1.5A, 10V | - | 6nC @ 10V | ±30V | 165pF @ 25V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 450V 4A MP3A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 450V | 4A (Ta) | 10V | 2.3 Ohm @ 2A, 10V | - | 9nC @ 10V | ±30V | 280pF @ 25V | - | 40.3W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 600V 3A TO251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Ta) | 10V | 4.3 Ohm @ 1.5A, 10V | - | 9nC @ 10V | ±30V | 285pF @ 25V | - | 40.3W (Tc) | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 600V 2A TO251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 6.8 Ohm @ 1A, 10V | - | 6.2nC @ 10V | ±30V | 165pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 600V 3A MP3A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Ta) | 10V | 4.3 Ohm @ 1.5A, 10V | - | 9nC @ 10V | ±30V | 285pF @ 25V | - | 40.3W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 34A 8HVSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Tc) | 4.5V, 10V | 2.6 mOhm @ 34A, 10V | - | 83nC @ 10V | ±20V | 4660pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 30A WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 6.5 mOhm @ 15A, 10V | - | 10.4nC @ 4.5V | ±20V | 1890pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 30V 35A WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.6 mOhm @ 17.5A, 10V | - | 12nC @ 4.5V | ±20V | 2170pF @ 10V | - | 30W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 30V 40A 2WPACK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.3 mOhm @ 20A, 10V | - | 21nC @ 4.5V | ±20V | 3270pF @ 10V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 40A WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 3.9 mOhm @ 20A, 10V | - | 15.7nC @ 4.5V | ±20V | 3010pF @ 10V | - | 35W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 30V 45A WPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.8 mOhm @ 22.5A, 10V | - | 21.2nC @ 4.5V | ±20V | 3850pF @ 10V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-262 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | 3.7 mOhm @ 50A, 10V | - | 100nC @ 10V | ±20V | 5550pF @ 25V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 60V 82A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 82A (Ta) | 10V | 6.5 mOhm @ 41A, 10V | - | 75nC @ 10V | ±20V | 4150pF @ 25V | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Isolated Tab |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | 3.7 mOhm @ 50A, 10V | - | 100nC @ 10V | ±20V | 5550pF @ 25V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Ta) | 4.5V, 10V | 33 mOhm @ 18A, 10V | - | 72nC @ 10V | ±20V | 3600pF @ 10V | - | 1W (Ta), 50W (Tc) | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 500V 5A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.6 Ohm @ 2A, 10V | - | 13nC @ 10V | ±30V | 550pF @ 25V | - | 28.5W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
