|
|
EPC |
TRANSISTOR GAN 100V 1A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 1A (Ta) | 5V | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | +6V, -4V | 90pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 60V 1A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 60V | 1A (Ta) | 5V | 45 mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15nC @ 5V | +6V, -4V | 115pF @ 30V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 100V 2.8OHM BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | +6V, -4V | 8.4pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 100V 550MOHM BUMPED DI |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | +6V, -4V | 14pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 40V 10A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16 mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | +6V, -4V | 300pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 80V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 80V | 6.8A (Ta) | 5V | 25 mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | +6V, -4V | 210pF @ 40V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 100V 6A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | +6V, -4V | 220pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (5-Solder Bar) | Die |
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|
EPC |
TRANSISTOR GAN 100V 18A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | +6V, -4V | 420pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 200V 5A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 5A (Ta) | 5V | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | +6V, -4V | 140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (4-Solder Bar) | Die |
|
|
EPC |
MOSFET NCH 15V 3.4A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 30 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | - | 105pF @ 6V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 200V 8.5A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 8.5A (Ta) | 5V | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | +6V, -4V | 270pF @ 100V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 100V 36A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 36A (Ta) | 5V | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | +6V, -4V | 900pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 40V 33A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | +6V, -4V | 980pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 100V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7 mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 40V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 16A (Ta) | 5V | 5 mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | +6V, -4V | 805pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 200V 22A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 25 mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (7-Solder Bar) | Die |
|
|
EPC |
MOSFET NCH 60V 31A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | 5V | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | +6V, -4V | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
MOSFET NCH 60V 31A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | - | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | - | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | - | - | - |
|
|
EPC |
TRANSISTOR GAN 200V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 11A (Ta) | 5V | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | +6V, -4V | 345pF @ 100V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 80V 31A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 80V | 48A (Ta) | 5V | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | +6V, -4V | 1410pF @ 40V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 100V 48A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A (Ta) | 5V | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | +6V, -4V | 1530pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
MOSFET NCH 40V 31A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | - | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | - | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | - | - | - |
|
|
EPC |
MOSFET NCH 40V 31A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | +6V, -4V | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 30V 60A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 30V | 60A (Ta) | - | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | - | - | 2300pF @ 15V | - | - | - | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
MOSFET NCH 40V 60A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 60A (Ta) | 5V | 1.5 mOhm @ 37A, 5V | 2.5V @ 19mA | - | +6V, -4V | 2100pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 60V 90A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 60V | 90A (Ta) | 5V | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | +6V, -4V | 1780pF @ 30V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 80V 90A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1650pF @ 40V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 100V 3MOHM BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 60A (Ta) | 5V | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 150V 7MOHM BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 150V | 31A (Ta) | - | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | - | 1140pF @ 75V | - | - | - | SMD Поверхностный монтаж | Die | Die |
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|
EPC |
TRANSISTOR GAN 200V 48A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | +6V, -4V | 950pF @ 100V | - | - | -40°C ~ 140°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 100V 2.7A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 100V | 2.7A (Ta) | 5V | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | +6V, -4V | 55pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 65V 2.7A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 65V | 2A (Ta) | 5V | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 65V 2.7A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 65V | 2.7A (Ta) | 5V | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 40V 2.7A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 40V | 2.7A (Ta) | 5V | 110 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
GANFET N-CH 80V 1.7A 6SOLDER BAR |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 80V | 1.7A | 5V | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | +5.75V, -4V | 88pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
GANFET N-CH 80V 18A DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 80V | 18A | 5V | 17 mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +5.75V, -4V | 415pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (6-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 40V 10A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16 mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8nC @ 5V | +6V, -5V | 325pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 100V 25A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | +6V, -5V | 950pF @ 50V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 200V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 200V | 32A (Ta) | 5V | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | +6V, -4V | 1050pF @ 100V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 350V BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 350V | 6.3A | 5V | 65 mOhm @ 6A, 5V | 2.5V @ 1.5mA | 4.3nC @ 5V | +6V, -4V | 505pF @ 280V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (12-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 300V 4A BUMPED DIE |
в производстве | N-Channel | GaNFET (Gallium Nitride) | 300V | 4A (Ta) | 5V | 150 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.85nC @ 5V | +6V, -4V | 194pF @ 240V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (12-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 100V BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 100V | 1A (Ta) | 5V | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | +6V, -4V | 12.5pF @ 50V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 30V 60A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 30V | 60A (Ta) | 5V | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | 20nC @ 5V | +6V, -4V | 2300pF @ 15V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 15V BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 28 mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | +6V, -4V | 100pF @ 6V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 100V 6A BUMPED DIE |
устарелый | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | +6V, -5V | 205pF @ 50V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 200V 12A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 200V | 12A (Ta) | 5V | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 200V 3A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 200V | 3A (Ta) | 5V | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | +6V, -5V | 145pF @ 100V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 40V 33A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 40V | 33A (Ta) | 5V | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | +6V, -5V | 1200pF @ 20V | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
TRANSISTOR GAN 100V 11A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 100V | 11A (Ta) | 5V | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | +6V, -5V | 520pF @ 50V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die | Die |
|
|
EPC |
TRANSISTOR GAN 150V 12A BUMPED DIE |
Discontinued at - | N-Channel | GaNFET (Gallium Nitride) | 150V | 12A (Ta) | 5V | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -5V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die | Die |
