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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 300MA TO92 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 5 Ohm @ 100mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | ±20V | 7.32pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 2.5V, 4.5V | 130 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 4.5nC @ 4.5V | ±12V | 480pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 5.8A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 5.8A (Tc) | 1.8V, 4.5V | 25 mOhm @ 4A, 4.5V | 800mV @ 250µA | 7.7nC @ 4.5V | ±10V | 535pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 6.5A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 4.5V, 10V | 24 mOhm @ 6A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 3A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Tc) | 4.5V, 10V | 85 mOhm @ 2.3A, 10V | 2.5V @ 250µA | 9.5nC @ 10V | ±20V | 529pF @ 30V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 3A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Tc) | 4.5V, 10V | 95 mOhm @ 3A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 565pF @ 30V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 5.3A SOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Tc) | 2.5V, 4.5V | 33 mOhm @ 5.3A, 4.5V | 1V @ 250µA | 8.8nC @ 4.5V | ±12V | 700pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 4.9A (Tc) | 1.8V, 4.5V | 33 mOhm @ 4.9A, 4.5V | 1V @ 250µA | 11.2nC @ 4.5V | ±8V | 500pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 4.9A (Tc) | 1.8V, 4.5V | 33 mOhm @ 4.9A, 4.5V | 1.2V @ 250µA | 11nC @ 4.5V | ±12V | 900pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 3A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | ±20V | 551.57pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 39 mOhm @ 4.7A, 4.5V | 1V @ 250µA | 12.5nC @ 4.5V | ±8V | 1020pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 18A TO252 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68 mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 20A TO252 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48 mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 300MA SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 300mA (Ta) | 10V | 21.6 Ohm @ 150mA, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 200pF @ 25V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 11A TO251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 4.5V, 10V | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 500pF @ 15V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 18A TO251 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68 mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 20A TO251 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48 mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 3.2A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 55 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 10nC @ 10V | ±8V | 990pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.1A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Tc) | 1.8V, 4.5V | 65 mOhm @ 3A, 4.5V | 800mV @ 250µA | 5.1nC @ 4.5V | ±10V | 515pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 1.3A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 1.3A (Ta) | 4.5V, 10V | 180 mOhm @ 1.3A, 10V | 3V @ 250µA | 3.2nC @ 4.5V | ±20V | 565pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Tc) | 1.8V, 4.5V | 50 mOhm @ 3A, 4.5V | 800mV @ 250µA | 9.6nC @ 4.5V | ±10V | 850pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Tc) | 1.8V, 4.5V | 25 mOhm @ 4A, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | ±10V | 600pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 6.5A SOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 4.5V, 10V | 24 mOhm @ 6A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 1.56W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 3.5A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 57 mOhm @ 3.5A, 10V | 3V @ 250µA | 5.5nC @ 4.5V | ±20V | 555pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 60 mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±12V | 640pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5.8A SOT23 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 30 mOhm @ 5.8A, 10V | 3V @ 250µA | 13.8nC @ 10V | ±20V | 400.96pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 6.5A SOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Tc) | 1.8V, 4.5V | 26 mOhm @ 5A, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | ±10V | 1670pF @ 15V | - | 1.56W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 3A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 156 mOhm @ 3A, 10V | 2.5V @ 250µA | 4.3nC @ 4.5V | ±20V | 511pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.3A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Tc) | 4.5V, 10V | 60 mOhm @ 5.3A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 551.57pF @ 15V | - | 5.3W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5A SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 60 mOhm @ 5A, 10V | 3V @ 250µA | 7nC @ 5V | ±20V | 555pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 4.7A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Tc) | 4.5V, 10V | 60 mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | ±20V | 560pF @ 15V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 9A 8SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 18 mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 4.5V | ±20V | 345pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5A SOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 60 mOhm @ 5A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 551.57pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA TO92 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25 Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 50A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 9 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | ±20V | 680pF @ 25V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 11A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 11A (Tc) | 1.8V, 4.5V | 16 mOhm @ 6A, 4.5V | 1V @ 250µA | 27nC @ 4.5V | ±10V | 2320pF @ 15V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 11A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 4.5V, 10V | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 500pF @ 15V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 7A TO252 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 7A (Tc) | 4.5V, 10V | 180 mOhm @ 3A, 10V | 2.5V @ 250µA | 8.2nC @ 10V | ±20V | 425pF @ 30V | - | 15.6W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.7A SOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 18.09nC @ 10V | ±20V | 1047.98pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 52A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 52A (Tc) | 4.5V, 10V | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | ±20V | 817pF @ 15V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 10A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | 4.5V, 10V | 18 mOhm @ 8A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | 1730pF @ 15V | - | 2.5W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 1A SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 10 Ohm @ 500mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 62A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 6 mOhm @ 15A, 10V | 2.5V @ 250µA | 25.4nC @ 10V | ±20V | 1342pF @ 15V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 50A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 9 mOhm @ 16A, 10V | 2.5V @ 250µA | 45nC @ 4.5V | ±20V | 750pF @ 25V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 55A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | ±20V | 750pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 73A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8 mOhm @ 14A, 10V | 2.5V @ 250µA | 14.4nC @ 10V | ±20V | 843pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 1.5A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 10V | 250 mOhm @ 1.5A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±20V | 975pF @ 25V | - | 1.38W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 30V 64A 8PDFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 8.5 mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 3234pF @ 15V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 20V 4.5A 6-TDFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 94 mOhm @ 2.8A, 4.5V | 500mV @ 250µA | 4.5nC @ 4.5V | ±12V | 5.2pF @ 6V | - | 6.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-TDFN (2x2) | 6-VDFN Exposed Pad |
