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Microchip Technology |
MOSFET P-CH 350V 0.086A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 350V | 86mA (Tj) | 4.5V, 10V | 25 Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 200V 0.175A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 200V | 175mA (Tj) | 5V, 10V | 12 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 25 Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 350V 0.18A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 350V | 180mA (Tj) | 2.5V, 10V | 15 Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.16A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 160mA (Tj) | 4.5V | 12 Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 500V 0.1A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 100mA (Tj) | 4.5V, 10V | 30 Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 125 Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 100V 1.2A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Tj) | 5V, 10V | 350 mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 100V 0.12A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 120mA (Tj) | 5V, 10V | 12 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 350V 0.135A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 135mA (Tj) | 0V | 35 Ohm @ 150mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 5 mOhm @ 20A, 10V | 1.6V @ 250µA | 15nC @ 4.5V | +10V, -8V | 1040pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 500V 0.23A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 230mA (Tj) | 0V | 10 Ohm @ 300mA, 0V | - | - | ±20V | 200pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 400V 260MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 260mA (Tj) | 4.5V, 10V | 12 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 500V 0.16A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 160mA (Tj) | 4.5V, 10V | 30 Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 400V 500MA 3DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Tj) | 4.5V, 10V | 5 Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET P-CH 400V 0.125A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 400V | 125mA (Tj) | 4.5V, 10V | 25 Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 43A (Tc) | 3.3V, 10V | 13.5 mOhm @ 10A, 10V | 1.7V @ 250µA | 8nC @ 4.5V | +10V, -8V | 400pF @ 12.5V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 350V 72MA SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 72mA (Tj) | 0V | 35 Ohm @ 150mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 300V 0.2A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 200mA (Tj) | 0V | 12 Ohm @ 150mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 350MA 3DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 350mA (Tj) | 0V | 10 Ohm @ 300mA, 0V | - | - | ±20V | 200pF @ 25V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 6 mOhm @ 20A, 10V | 1.7V @ 250µA | 14nC @ 4.5V | +10V, -8V | 890pF @ 12.5V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 6V 1.8A 8MSOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 160 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600pF @ 5.5V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 250V 0.215A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 215mA (Ta) | 4.5V, 10V | 7 Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 740mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 12 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 3.5 mOhm @ 20A, 10V | 1.6V @ 250µA | 22nC @ 4.5V | +10V, -8V | 1635pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5 Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5 Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8 Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8 Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
