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Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 1.5 Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 1.5 Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750 mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750 mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 18V 400MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 18V | 400mA (Tj) | 1.2V, 3V | 2.5 Ohm @ 200mA, 3V | 1V @ 1mA | - | ±20V | 110pF @ 15V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 1.2 Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 3 Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 350V 365MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 365mA (Tj) | 3V, 10V | 6 Ohm @ 750mA, 10V | 2.5V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 400V 0.175A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 175mA (Tj) | 4.5V, 10V | 12 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 200V 0.25A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 250mA (Tj) | 5V, 10V | 6 Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 12 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 240V 0.316A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 240V | 316mA (Tj) | 4.5V, 10V | 8 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 1.2A (Tj) | 4.5V, 10V | 300 mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 350V 0.231A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 350V | 231mA (Tj) | 3V, 10V | 15 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 25 Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 60 Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 120V 0.23A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 230mA (Tj) | 2.5V, 10V | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±30V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 125 Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 16.5V 0.7A 8SOIC |
в производстве | P-Channel | MOSFET (Metal Oxide) | 16.5V | 700mA (Tj) | 2V, 5V | 1.5 Ohm @ 300mA, 5V | 1V @ 1mA | - | ±10V | 250pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET N-CH 400V 260MA 8SOIC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 260mA (Tj) | 4.5V, 10V | 5 Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET P-CH 400V 0.086A 8SOIC |
в производстве | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 2.5V, 10V | 15 Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 900 mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 450 mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100pF @ 12V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 450 mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100pF @ 12V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 450 mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100pF @ 12V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 6V 1.8A SOT-143 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 160 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600pF @ 5.5V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 6V 1.8A 8MSOP |
устарелый | P-Channel | MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 160 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600pF @ 5.5V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
Discontinued at - | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
Discontinued at - | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Microchip Technology |
MOSFET P-CHANNEL 16V 1A |
устарелый | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | - | 450 mOhm @ 100mA, 10V | 1.4V @ 250µA | - | - | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | - |
