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Nexperia USA Inc. |
MOSFET N-CH 40V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1 mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | ±20V | 6200pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 3.7 mOhm @ 25A, 10V | 2V @ 1mA | 95nC @ 5V | ±15V | 10220pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
PSMN5R6-100YSF/SOT1023/4 LEADS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
PSMN5R6-100YSF/SOT1023/4 LEADS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 158A | 10V | - | - | 63nC @ 10V | - | - | - | 294W | 175°C (TJ) | SMD Поверхностный монтаж | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2 mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | ±20V | 8500pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
BUK7Y1R4-40H/SOT669/LFPAK |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET N-CH 75V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 4 mOhm @ 25A, 10V | 2.8V @ 1mA | 234nC @ 10V | ±16V | 15450pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
BUK9Y1R3-40H/SOT669/LFPAK |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 5 mOhm @ 25A, 10V | 4V @ 1mA | 165nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
PSMNR58-30YLH/SOT1023/4 LEADS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 300A | - | - | - | 98nC @ 10V | - | 6.16nF @ 10V | Schottky Diode (Body) | - | 175°C (TJ) | SMD Поверхностный монтаж | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Nexperia USA Inc. |
MOSFET N-CH 60V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10170pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.2 mOhm @ 25A, 10V | 4V @ 1mA | 136nC @ 10V | ±20V | 10426pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
PSMN1R0-40ULD/SOT1023/4 LEADS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 280A | - | - | - | 127nC @ 10V | - | - | - | 164W | 150°C (TJ) | SMD Поверхностный монтаж | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Nexperia USA Inc. |
MOSFET N-CH 150V 55.5A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 55.5A (Tc) | 10V | 30 mOhm @ 25A, 10V | 4V @ 1mA | 98nC @ 10V | ±20V | 3680pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 192nC @ 10V | ±20V | 13500pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3 mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | ±20V | 8500pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 200V 8.8A 8HVSON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 8.8A (Tc) | 6V, 10V | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | ±20V | 657pF @ 30V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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Nexperia USA Inc. |
MOSFET N-CH 100V 23.4A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 23.4A (Tc) | 10V | 26.8 mOhm @ 5A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1624pF @ 50V | - | 41.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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Nexperia USA Inc. |
MOSFET N-CH 60V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4 mOhm @ 25A, 10V | 4V @ 1mA | 158nC @ 10V | ±20V | 11180pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 5 mOhm @ 25A, 10V | 4V @ 1mA | 165nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 100V 75A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 8.8 mOhm @ 25A, 10V | 4V @ 1mA | 156nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 120V 70A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 7.9 mOhm @ 25A, 10V | 4V @ 1mA | 167nC @ 10V | ±20V | 9473pF @ 60V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
BUK7J1R0-40H/SOT1023/4 LEADS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
BUK9J0R9-40H/SOT1023/4 LEADS |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
PSMN8R9-100BSE/SOT404/D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 108A | - | - | - | 128nC @ 10V | - | 7.11nF @ 10V | - | 296W | 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 120V 70A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 7.9 mOhm @ 25A, 10V | 4V @ 1mA | 167nC @ 10V | ±20V | 9473pF @ 60V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5 mOhm @ 50A, 10V | 4V @ 1mA | 127nC @ 10V | ±20V | 5000pF @ 25V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5 mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9800pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 200V 20A D2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 130 mOhm @ 10A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 2470pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.3 mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7 mOhm @ 50A, 10V | 4V @ 1mA | 116nC @ 10V | ±20V | 4500pF @ 25V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | SOT-426 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 6.5 mOhm @ 50A, 10V | 2V @ 1mA | - | ±15V | 5836pF @ 25V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 4.5V, 10V | 9.7 mOhm @ 25A, 10V | 2V @ 1mA | 86nC @ 5V | ±15V | 11045pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9 mOhm @ 50A, 10V | 4V @ 1mA | 121nC @ 10V | ±20V | 4700pF @ 25V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7 mOhm @ 50A, 10V | 4V @ 1mA | 116nC @ 10V | ±20V | 4500pF @ 25V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.2 mOhm @ 25A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3789pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 41A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 35 mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2535pF @ 25V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A D2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4.1 mOhm @ 50A, 10V | 4V @ 1mA | 83nC @ 10V | ±20V | 6808pF @ 25V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | SOT-426 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
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Nexperia USA Inc. |
MOSFET N-CH 75V 120A I2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 4.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 234nC @ 10V | ±16V | 15450pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A I2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.6 mOhm @ 25A, 10V | 2.8V @ 1mA | 125nC @ 10V | ±16V | 8020pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 120A I2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | ±16V | 15300pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 120A D2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 4.5V, 10V | 3.4 mOhm @ 25A, 10V | 2.8V @ 1mA | 191nC @ 10V | ±16V | 11516pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 100V 23A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 72 mOhm @ 10A, 10V | 2V @ 1mA | - | ±15V | 1704pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 150V 3.5A SOT96-1 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 150V | 3.5A (Tc) | 10V | 85 mOhm @ 3.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 1310pF @ 25V | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia USA Inc. |
MOSFET N-CH 30V 1.87A SOT883 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 1.87A (Tc) | 2.5V, 4.5V | 420 mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | ±12V | 37pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DFN1006-3 | SC-101, SOT-883 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 7 mOhm @ 25A, 10V | 2V @ 1mA | 45nC @ 5V | ±15V | 5280pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 5 mOhm @ 25A, 10V | 2V @ 1mA | 32nC @ 5V | ±15V | 3373pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 5 mOhm @ 25A, 10V | 2V @ 1mA | 44nC @ 5V | ±15V | 4901pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A I2PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3 mOhm @ 25A, 10V | 2.8V @ 1mA | 260nC @ 10V | ±16V | 15100pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB |
устарелый | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 10 mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | ±15V | 3693pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
