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Rohm Semiconductor |
MOSFET NCH 650V 70A TO247N |
в производстве | N-Channel | SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | +22V, -4V | 1526pF @ 500V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO-247 |
в производстве | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 2080pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 4A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 45 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.5nC @ 5V | ±20V | 1000pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4A TUMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 30 mOhm @ 4A, 4.5V | 1V @ 1mA | 37nC @ 4.5V | -8V | 4000pF @ 6V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TUMT6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 4.5V | 56 mOhm @ 3.5A, 4.5V | 1.5V @ 1mA | 6.4nC @ 4.5V | 12V | 350pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 4.5A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4V, 10V | 35 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 14nC @ 5V | ±20V | 1350pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 14A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4V, 10V | 7 mOhm @ 14A, 10V | 2.5V @ 1mA | 150nC @ 10V | ±20V | 8000pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 200V 70A LPTS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 42.7 mOhm @ 35A, 10V | 5V @ 1mA | 125nC @ 10V | ±30V | 6900pF @ 25V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 37 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 6nC @ 10V | ±20V | 250pF @ 15V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 200V 8A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 8A (Tc) | 10V | 770 mOhm @ 4A, 10V | 5.25V @ 1mA | 8.5nC @ 10V | ±30V | 330pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 1.5A TSMT6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 3.5nC @ 10V | ±20V | 110pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 18A 8-HSMT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.3 mOhm @ 18A, 10V | 2.5V @ 1mA | 22.4nC @ 10V | ±20V | 1520pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 30A 8-HSOP |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 2.2 mOhm @ 30A, 10V | 2.5V @ 1mA | 39.8nC @ 10V | ±20V | 2500pF @ 15V | - | 3W (Ta), 33W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 40V 26A 8HSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta) | 4.5V, 10V | 3.3 mOhm @ 26A, 10V | 2.5V @ 1mA | 44nC @ 10V | ±20V | 2988pF @ 20V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 40V 30A 8HSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta) | 4.5V, 10V | 2.5 mOhm @ 30A, 10V | 2.5V @ 1mA | 56.8nC @ 10V | ±20V | 4230pF @ 20V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 300 mOhm @ 7.5A, 10V | 4.15V @ 1mA | 50nC @ 10V | ±30V | 1700pF @ 25V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
2.5V DRIVE NCH MOSFET AEC-Q101 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 2.5V, 4.5V | 580 mOhm @ 500mA, 4.5V | 1.5V @ 1mA | 4nC @ 4V | ±12V | 60pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
NCH 60V 1.5A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 2nC @ 5V | ±20V | 110pF @ 10V | - | 800mW (Ta) | 150°C | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
2.5V DRIVE NCH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | - | 270pF @ 10V | - | 800mW (Ta) | 150°C | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
PCH -20V -6.5A MIDDLE POWER MOSF |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Tc) | 4.5V | 21 mOhm @ 6.5A, 4.5V | 1.2V @ 1mA | 22nC @ 4.5V | ±8V | 1520pF @ 10V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SC-95-6 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 14.6 mOhm @ 9.5A, 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | ±20V | 680pF @ 15V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 250V 6A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 6A (Tc) | 10V | 530 mOhm @ 3A, 10V | 5V @ 1mA | 15nC @ 10V | ±30V | 840pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 200V 10A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 10A (Tc) | 10V | 182 mOhm @ 5A, 10V | 5.25V @ 1mA | 25nC @ 10V | ±30V | 1400pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET CORRESPONDS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25 mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 190V 10A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 190V | 10A (Tc) | 4V, 10V | 182 mOhm @ 5A, 10V | 2.5V @ 1mA | 52nC @ 10V | ±20V | 2000pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 250V/33A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Ta) | 10V | 105 mOhm @ 16.5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 4500pF @ 25V | - | 211W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LPTS | SC-83 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A VMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A EMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 2.2 Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A WEMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | ±10V | 110pF @ 10V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 60V 1.5A TUMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 2nC @ 5V | 20V | 110pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 160 mOhm @ 2A, 10V | 2.5V @ 1mA | 3.2nC @ 5V | ±20V | 230pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.5A WEMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 2.5V, 4.5V | 240 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | ±12V | 80pF @ 10V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
1.5V DRIVE PCH MOSFET |
устарелый | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.1A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 1.1A (Ta) | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 105 mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | ±10V | 850pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 45V 1A TUMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 45V | 1A (Ta) | 4V, 10V | 460 mOhm @ 1A, 10V | 2.5V @ 1mA | 2.3nC @ 5V | ±20V | 160pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 3.5A TUMT6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.5V, 4.5V | 42 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 22nC @ 4.5V | -8V | 2700pF @ 6V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A WEMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | ±10V | 110pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 45V | 2A (Ta) | 2.5V, 4.5V | 190 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 2.3nC @ 4.5V | ±12V | 150pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1A WEMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 390 mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | ±12V | 150pF @ 10V | Schottky Diode (Body) | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | 75 mOhm @ 3A, 10V | 2.5V @ 1mA | 12nC @ 10V | ±20V | 480pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.5A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 100 mOhm @ 2.5A, 4.5V | 2V @ 1mA | 6.4nC @ 4.5V | ±12V | 580pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 10A 8HUML |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 26 mOhm @ 5A, 4.5V | 1V @ 1mA | 55nC @ 4.5V | -8V | 5500pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 2A WEMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | ±10V | 180pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 50 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.3nC @ 5V | ±20V | 180pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 20V 3A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 80 mOhm @ 3A, 4.5V | 2V @ 1mA | 9nC @ 4.5V | ±12V | 800pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 120 mOhm @ 2A, 10V | - | 4.3nC @ 5V | ±20V | 370pF @ 10V | - | 1W (Ta) | - | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 215 mOhm @ 1.5A, 4.5V | 2V @ 1mA | 3nC @ 4.5V | ±12V | 270pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
