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Rohm Semiconductor |
MOSFET N-CH 250V 5A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 1.36 Ohm @ 2.5A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | ±30V | 350pF @ 25V | - | 2.23W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 5V @ 1mA | 15nC @ 10V | ±30V | 840pF @ 25V | - | 2.23W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.05 Ohm @ 3.5A, 10V | 4.5V @ 1mA | 13nC @ 10V | ±30V | 500pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.6 Ohm @ 2.5A, 10V | 4.5V @ 1mA | 10.8nC @ 10V | ±30V | 320pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 8A TO220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 4V @ 1mA | 23nC @ 10V | ±30V | 1120pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 250pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 16A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 180 mOhm @ 8A, 10V | 5.25V @ 1mA | 26nC @ 10V | ±30V | 1370pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 1.3 Ohm @ 3.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±30V | 450pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 11A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 500 mOhm @ 5.5A, 10V | 4.5V @ 1mA | 30nC @ 10V | ±30V | 1000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 620 mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 250V 22A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 22A (Tc) | 10V | 140 mOhm @ 11A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 3200pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535 mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 430pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 45A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 45A (Tc) | 10V | 55 mOhm @ 22.5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 4200pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 11A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390 mOhm @ 3.8A, 10V | 4V @ 1mA | 32nC @ 10V | ±20V | 670pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 250V 51A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 65 mOhm @ 25.5A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 7000pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 21A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 210 mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 950 mOhm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 580pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 12A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 420 mOhm @ 6A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3PF |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 220 mOhm @ 10A, 10V | 4.15V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 250V 51A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Ta) | 10V | - | - | - | ±30V | - | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 12A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 510 mOhm @ 6A, 10V | 5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 4A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | ±20V | 280pF @ 25V | Schottky Diode (Isolated) | 58W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 100V 30A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Ta) | 4V, 10V | 46 mOhm @ 15A, 10V | 2.5V @ 1mA | 60nC @ 10V | ±20V | 2100pF @ 25V | - | 50W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | LPTS | SC-83 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | ±20V | 280pF @ 25V | Schottky Diode (Isolated) | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 620 mOhm @ 2.4A, 10V | 5V @ 1mA | 14.5nC @ 10V | ±20V | 470pF @ 25V | Schottky Diode (Isolated) | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | ±20V | 540pF @ 25V | Schottky Diode (Isolated) | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 11A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390 mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | ±20V | 740pF @ 25V | Schottky Diode (Isolated) | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | ±20V | 2000pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196 mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | Schottky Diode (Isolated) | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196 mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 15A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290 mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | Schottky Diode (Isolated) | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 20A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196 mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 24A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | ±20V | 2000pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 24A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165 mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | ±20V | 2000pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 35A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102 mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | ±20V | 3000pF @ 25V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 150 mOhm @ 15A, 10V | 5V @ 1mA | 43nC @ 10V | ±30V | 2180pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
2.5V DRIVE NCH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 350mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A EMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A SST3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4 Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 250MA EMT3F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 160 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.4nC @ 10V | ±20V | 230pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A HSMT8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 6 mOhm @ 13A, 10V | 2.5V @ 1mA | 36nC @ 10V | ±20V | 1900pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A TUMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | ±10V | 110pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 3A TSMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 62 mOhm @ 3A, 4.5V | 1V @ 1mA | 16nC @ 4.5V | -8V | 2000pF @ 6V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 40V 12A 8HSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta) | 4.5V, 10V | 16.2 mOhm @ 12A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 570pF @ 20V | - | 3W (Ta), 25W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
