номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Rohm Semiconductor MOSFET N-CH 600V 35A TO247 в производствеN-ChannelMOSFET (Metal Oxide)600V35A (Tc)10V102 mOhm @ 18.1A, 10V4V @ 1mA110nC @ 10V±20V2720pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 30A TO3PF в производствеN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V130 mOhm @ 14.5A, 10V4V @ 1mA85nC @ 10V±20V2100pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-3PFTO-3P-3 Full Pack
Rohm Semiconductor MOSFET N-CH 600V 30A TO247 в производствеN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V130 mOhm @ 14.5A, 10V4V @ 1mA85nC @ 10V±20V2100pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 15A TO-220FM устарелыйN-ChannelMOSFET (Metal Oxide)600V15A (Ta)10V350 mOhm @ 7.5A, 10V5V @ 1mA42nC @ 10V±30V1660pF @ 25V
-
50W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CH 600V 20A TO-220FM устарелыйN-ChannelMOSFET (Metal Oxide)600V20A (Ta)10V220 mOhm @ 10A, 10V4.5V @ 1mA65nC @ 10V±30V2040pF @ 25V
-
50W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CH 500V 16A TO-220FM устарелыйN-ChannelMOSFET (Metal Oxide)500V16A (Ta)10V325 mOhm @ 8A, 10V5V @ 1mA46nC @ 10V±30V1700pF @ 25V
-
50W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CH 600V 20A TO-220FM устарелыйN-ChannelMOSFET (Metal Oxide)600V20A (Tc)10V250 mOhm @ 10A, 10V5V @ 1mA65nC @ 10V±30V2040pF @ 25V
-
50W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CH 600V 47A TO247 в производствеN-ChannelMOSFET (Metal Oxide)600V47A (Tc)10V72 mOhm @ 25.8A, 10V4V @ 1mA145nC @ 10V±20V3850pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 46A TO247 устарелыйN-ChannelMOSFET (Metal Oxide)600V46A (Tc)10V98 mOhm @ 23A, 10V5V @ 1mA150nC @ 10V±30V6230pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 46A TO247 устарелыйN-ChannelMOSFET (Metal Oxide)600V46A (Tc)10V90 mOhm @ 23A, 10V4.5V @ 1mA150nC @ 10V±30V6000pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 46A TO-3PF устарелыйN-ChannelMOSFET (Metal Oxide)600V46A (Ta)10V93 mOhm @ 23A, 10V5V @ 1mA150nC @ 10V±30V6100pF @ 25V
-
120W (Tc)150°C (TJ)Through HoleTO-3PFTO-220-3 Full Pack
Rohm Semiconductor 4V DRIVE NCH MOSFET CORRESPONDS в производствеN-ChannelMOSFET (Metal Oxide)30V300mA (Ta)4V, 10V1.2 Ohm @ 300mA, 10V2.5V @ 1mA
-
±20V20pF @ 10V
-
200mW150°C (TJ)SMD Поверхностный монтажUMT3SC-70, SOT-323
Rohm Semiconductor MOSFET P-CHANNEL 30V 2.5A TSMT3 в производствеP-ChannelMOSFET (Metal Oxide)30V2.5A (Ta)10V91 mOhm @ 2.5A, 10V2.5V @ 1mA2.7nC @ 4.5V±20V220pF @ 15V
-
1W (Tc)150°C (TJ)SMD Поверхностный монтажTSMT3SC-96
Rohm Semiconductor NCH 20V 2.5A MIDDLE POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)20V2.5A (Ta)1.5V, 4.5V54 mOhm @ 2.5A, 4.5V1.3V @ 1mA5nC @ 4.5V±10V370pF @ 10V
-
800mW (Ta)150°C (TJ)SMD Поверхностный монтажTUMT33-SMD, Flat Leads
Rohm Semiconductor 2.5V DRIVE NCH MOSFET AEC-Q101 в производствеN-ChannelMOSFET (Metal Oxide)30V3.5A (Ta)2.5V, 4.5V56 mOhm @ 3.5A, 4.5V1.5V @ 1mA6.4nC @ 4.5V
-
350pF @ 10V
-
1W (Ta)150°CSMD Поверхностный монтажTUMT66-SMD, Flat Leads
Rohm Semiconductor PCH -30V -2.5A POWER MOSFET в производствеP-ChannelMOSFET (Metal Oxide)30V2.5A (Ta)4V, 10V75 mOhm @ 2.5A, 10V2.5V @ 1mA12nC @ 10V±20V480pF @ 10V
-
1W (Ta)150°C (TJ)SMD Поверхностный монтажTUMT66-SMD, Flat Leads
Rohm Semiconductor MOSFET P-CH 12V 2A TSMT3 устарелыйP-ChannelMOSFET (Metal Oxide)12V2A (Ta)1.5V, 4.5V105 mOhm @ 2A, 4.5V1V @ 1mA6.5nC @ 4.5V±10V770pF @ 6V
-
1W (Ta)150°C (TJ)SMD Поверхностный монтажTSMT3SC-96
Rohm Semiconductor MOSFET P-CH 30V 3A TSMT в производствеP-ChannelMOSFET (Metal Oxide)30V
-
-
91 mOhm @ 3A, 10V2.5V @ 1mA5.4nC @ 10V
-
240pF @ 15V
-
-
-
SMD Поверхностный монтажTSMT6 (SC-95)SC-74, SOT-457
Rohm Semiconductor MOSFET P-CHANNEL 20V 6A TSMT3 в производствеP-ChannelMOSFET (Metal Oxide)20V6A (Ta)4.5V21.1 mOhm @ 6A, 4.5V1.2V @ 1mA19.2nC @ 4.5V±8V1360pF @ 10V
-
1W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTSMT3SC-96
Rohm Semiconductor MOSFET N-CHANNEL 30V 9.5A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V9.5A (Ta)10V14.6 mOhm @ 9.5A, 10V2.5V @ 1mA8.3nC @ 4.5V±20V680pF @ 15V
-
2W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
Rohm Semiconductor NCH 30V 11A MIDDLE POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)30V11A (Tc)4.5V9 mOhm @ 4.5A, 11V1.5V @ 10mA22nC @ 4.5V±12V2410pF @ 15V
-
1.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTSMT88-SMD, Flat Lead
Rohm Semiconductor 4V DRIVE PCH MOSFET CORRESPONDS в производствеP-ChannelMOSFET (Metal Oxide)45V6A (Ta)4V, 10V36 mOhm @ 6A, 10V2.5V @ 1mA32.2nC @ 5V±20V2700pF @ 10V
-
2W (Ta)150°CSMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
Rohm Semiconductor PCH -30V -5.5A MIDDLE POWER MOSF в производствеP-ChannelMOSFET (Metal Oxide)30V5.5A (Tc)10V24.5 mOhm @ 5.5A, 10V2.5V @ 1mA18.8nC @ 10V±20V860pF @ 15V
-
1.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTSMT88-SMD, Flat Lead
Rohm Semiconductor NCH 60V 8A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)60V8A (Ta)4V, 10V80 mOhm @ 8A, 10V2.5V @ 1mA9.4nC @ 10V±20V380pF @ 10V
-
15W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor PCH -45V -4.5A POWER MOSFET в производствеP-ChannelMOSFET (Metal Oxide)45V4.5A (Ta)4V, 10V155 mOhm @ 4.5A, 10V3V @ 1mA12nC @ 5V±20V550pF @ 10V
-
15W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor MOSFET P-CHANNEL 20V 30A 8HSMT в производствеP-ChannelMOSFET (Metal Oxide)20V30A (Tc)4.5V6.7 mOhm @ 15A, 4.5V1.2V @ 1mA60nC @ 4.5V±8V4800pF @ 10V
-
20W (Tc)150°C (TJ)SMD Поверхностный монтаж8-HSMT (3.2x3)8-PowerVDFN
Rohm Semiconductor NCH 60V 15A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)60V15A (Ta)4V, 10V40 mOhm @ 15A, 10V3V @ 1mA18nC @ 10V±20V930pF @ 10V
-
20W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor NCH 250V 4A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)250V4A (Tc)10V1.3 Ohm @ 2A, 10V5.5V @ 1mA8.5nC @ 10V±30V350pF @ 25V
-
29W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor NCH 200V 7.5A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)200V7.5A (Tc)10V325 mOhm @ 3.75A, 10V5.25V @ 1mA15nC @ 10V±30V755pF @ 25V
-
52W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor NCH 100V 10A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)100V10A (Ta)4V, 10V133 mOhm @ 5A, 10V2.5V @ 1mA18nC @ 10V±20V700pF @ 25V
-
20W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor NCH 190V 7.5A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)190V7.5A (Tc)4V, 10V336 mOhm @ 3.8A, 10V2.5V @ 1mA30nC @ 10V±20V1100pF @ 25V
-
52W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Rohm Semiconductor NCH 600V 15A POWER MOSFET в производствеN-ChannelMOSFET (Metal Oxide)600V15A (Tc)10V290 mOhm @ 6.5A, 10V5V @ 1mA27.5nC @ 10V±20V1050pF @ 25V
-
60W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CHANNEL 600V 30A TO247 в производствеN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V130 mOhm @ 14.5A, 10V5V @ 1mA56nC @ 10V±20V2350pF @ 25V
-
305W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor MOSFET N-CH 600V 30A TO220FM в производствеN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V130 mOhm @ 14.5A, 10V5V @ 1mA56nC @ 10V±20V2350pF @ 25V
-
86W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
Rohm Semiconductor MOSFET N-CHANNEL 600V 30A TO3PF в производствеN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V130 mOhm @ 14.5A, 10V5V @ 1mA56nC @ 10V±20V2350pF @ 25V
-
86W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PFTO-3P-3 Full Pack
Rohm Semiconductor MOSFET N-CHANNEL 600V 35A TO3PF в производствеN-ChannelMOSFET (Metal Oxide)600V35A (Tc)10V102 mOhm @ 18.1A, 10V5V @ 1mA72nC @ 10V±20V3000pF @ 25V
-
102W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PFTO-3P-3 Full Pack
Rohm Semiconductor MOSFET N-CHANNEL 600V 76A TO247 в производствеN-ChannelMOSFET (Metal Oxide)600V76A (Tc)10V55 mOhm @ 38A, 10V5V @ 1mA115nC @ 10V±30V7000pF @ 25V
-
740W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247TO-247-3
Rohm Semiconductor 1.2V DRIVE NCH MOSFET в производствеN-ChannelMOSFET (Metal Oxide)50V200mA (Ta)1.2V, 4.5V
-
1V @ 1mA
-
±8V25pF @ 10V
-
350mW (Ta)150°C (TJ)SMD Поверхностный монтажSST3TO-236-3, SC-59, SOT-23-3
Rohm Semiconductor MOSFET P-CH 45V 700MA TUMT5 в производствеP-ChannelMOSFET (Metal Oxide)45V700mA (Ta)4V, 10V800 mOhm @ 700mA, 10V2.5V @ 1mA1.7nC @ 5V±20V120pF @ 10VSchottky Diode (Isolated)1W (Ta)150°C (TJ)SMD Поверхностный монтажTUMT56-SMD (5 Leads), Flat Lead
Rohm Semiconductor MOSFET P-CH 20V 0.1A UMT3F в производствеP-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.2V, 4.5V3.8 Ohm @ 100mA, 4.5V1V @ 100µA
-
±10V15pF @ 10V
-
150mW (Ta)150°C (TJ)SMD Поверхностный монтажUMT3FSC-85
Rohm Semiconductor MOSFET P-CH 12V 6A TSMT8 в производствеP-ChannelMOSFET (Metal Oxide)12V6A (Ta)1.5V, 4.5V23 mOhm @ 6A, 4.5V1V @ 1mA34nC @ 4.5V±10V2800pF @ 6V
-
700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMT88-SMD, Flat Lead
Rohm Semiconductor MOSFET N-CH 30V 13A 8PSOP устарелыйN-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V12.6 mOhm @ 13A, 10V2.5V @ 1mA12nC @ 10V±20V650pF @ 15V
-
3W (Ta)150°C (TJ)SMD Поверхностный монтаж8-PSOP8-SMD, Flat Lead
Rohm Semiconductor MOSFET N-CH 50V 0.2A UMT3 устарелыйN-ChannelMOSFET (Metal Oxide)50V200mA (Ta)1.2V, 4.5V2.2 Ohm @ 200mA, 4.5V1V @ 1mA
-
±8V25pF @ 10V
-
200mW (Ta)150°C (TJ)SMD Поверхностный монтажUMT3SC-70, SOT-323
Rohm Semiconductor MOSFET N-CH 1.2V DRIVE EMT3FM в производствеN-ChannelMOSFET (Metal Oxide)50V200mA (Ta)0.9V, 4.5V2.2 Ohm @ 200mA, 4.5V800mV @ 1mA
-
±8V26pF @ 10V
-
150mW (Ta)150°C (TJ)SMD Поверхностный монтажEMT3F (SOT-416FL)SC-89, SOT-490
Rohm Semiconductor MOSFET N-CH 30V 8A HSMT8 в производствеN-ChannelMOSFET (Metal Oxide)30V8A (Ta)4.5V, 10V15.2 mOhm @ 8A, 10V2.5V @ 1mA14.5nC @ 10V±20V660pF @ 15V
-
2W (Ta)150°C (TJ)SMD Поверхностный монтаж8-HSMT (3.2x3)8-PowerVDFN
Rohm Semiconductor MOSFET N-CH 20V 0.2A VMT3 в производствеN-ChannelMOSFET (Metal Oxide)20V200mA (Ta)1.2V, 2.5V1.2 Ohm @ 200mA, 2.5V1V @ 1mA
-
±8V25pF @ 10V
-
150mW (Ta)150°C (TJ)SMD Поверхностный монтажVMT3SOT-723
Rohm Semiconductor MOSFET N-CH 20V 0.2A UMT3F в производствеN-ChannelMOSFET (Metal Oxide)20V200mA (Ta)1.2V, 2.5V1.2 Ohm @ 200mA, 2.5V1V @ 1mA
-
±8V25pF @ 10V
-
150mW (Ta)150°C (TJ)SMD Поверхностный монтажUMT3FSC-85
Rohm Semiconductor MOSFET N-CH 20V 1A VML1006 в производствеN-ChannelMOSFET (Metal Oxide)20V1A (Ta)1.2V, 4.5V470 mOhm @ 500mA, 4.5V1V @ 1mA
-
±8V40pF @ 10V
-
400mW (Ta)150°C (TJ)SMD Поверхностный монтажDFN1006-3 (VML1006)SC-101, SOT-883
Rohm Semiconductor MOSFET N-CH 30V 1.4A WEMT6 устарелыйN-ChannelMOSFET (Metal Oxide)30V1.4A (Ta)4V, 10V240 mOhm @ 1.4A, 10V2.5V @ 1mA1.4nC @ 5V±20V70pF @ 10V
-
700mW (Ta)150°C (TJ)SMD Поверхностный монтаж6-WEMTSOT-563, SOT-666
Rohm Semiconductor MOSFET N-CH 30V 300MA SOT-323 устарелыйN-ChannelMOSFET (Metal Oxide)30V300mA (Ta)4V, 10V1.2 Ohm @ 300mA, 10V
-
-
±20V20pF @ 10V
-
200mW (Ta)
-
SMD Поверхностный монтажUMT3SC-70, SOT-323
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5
  6. 6
  7. 7
  8. 8
  9. 9
  10. 10