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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 2720pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 350 mOhm @ 7.5A, 10V | 5V @ 1mA | 42nC @ 10V | ±30V | 1660pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 220 mOhm @ 10A, 10V | 4.5V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 16A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Ta) | 10V | 325 mOhm @ 8A, 10V | 5V @ 1mA | 46nC @ 10V | ±30V | 1700pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250 mOhm @ 10A, 10V | 5V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 47A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72 mOhm @ 25.8A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 3850pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO247 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 98 mOhm @ 23A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 6230pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO247 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 90 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | ±30V | 6000pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO-3PF |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Ta) | 10V | 93 mOhm @ 23A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 6100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-220-3 Full Pack |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET CORRESPONDS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 4V, 10V | 1.2 Ohm @ 300mA, 10V | 2.5V @ 1mA | - | ±20V | 20pF @ 10V | - | 200mW | 150°C (TJ) | SMD Поверхностный монтаж | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET P-CHANNEL 30V 2.5A TSMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 10V | 91 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 2.7nC @ 4.5V | ±20V | 220pF @ 15V | - | 1W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
NCH 20V 2.5A MIDDLE POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 54 mOhm @ 2.5A, 4.5V | 1.3V @ 1mA | 5nC @ 4.5V | ±10V | 370pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
2.5V DRIVE NCH MOSFET AEC-Q101 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 4.5V | 56 mOhm @ 3.5A, 4.5V | 1.5V @ 1mA | 6.4nC @ 4.5V | - | 350pF @ 10V | - | 1W (Ta) | 150°C | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
PCH -30V -2.5A POWER MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 12nC @ 10V | ±20V | 480pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 2A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.5V, 4.5V | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | ±10V | 770pF @ 6V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | - | - | 91 mOhm @ 3A, 10V | 2.5V @ 1mA | 5.4nC @ 10V | - | 240pF @ 15V | - | - | - | SMD Поверхностный монтаж | TSMT6 (SC-95) | SC-74, SOT-457 |
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Rohm Semiconductor |
MOSFET P-CHANNEL 20V 6A TSMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 4.5V | 21.1 mOhm @ 6A, 4.5V | 1.2V @ 1mA | 19.2nC @ 4.5V | ±8V | 1360pF @ 10V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 14.6 mOhm @ 9.5A, 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | ±20V | 680pF @ 15V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 30V 11A MIDDLE POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V | 9 mOhm @ 4.5A, 11V | 1.5V @ 10mA | 22nC @ 4.5V | ±12V | 2410pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
4V DRIVE PCH MOSFET CORRESPONDS |
в производстве | P-Channel | MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | 36 mOhm @ 6A, 10V | 2.5V @ 1mA | 32.2nC @ 5V | ±20V | 2700pF @ 10V | - | 2W (Ta) | 150°C | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
PCH -30V -5.5A MIDDLE POWER MOSF |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Tc) | 10V | 24.5 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 18.8nC @ 10V | ±20V | 860pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
NCH 60V 8A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 80 mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 380pF @ 10V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -45V -4.5A POWER MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 45V | 4.5A (Ta) | 4V, 10V | 155 mOhm @ 4.5A, 10V | 3V @ 1mA | 12nC @ 5V | ±20V | 550pF @ 10V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CHANNEL 20V 30A 8HSMT |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 30A (Tc) | 4.5V | 6.7 mOhm @ 15A, 4.5V | 1.2V @ 1mA | 60nC @ 4.5V | ±8V | 4800pF @ 10V | - | 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
NCH 60V 15A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4V, 10V | 40 mOhm @ 15A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 930pF @ 10V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 250V 4A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Tc) | 10V | 1.3 Ohm @ 2A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | ±30V | 350pF @ 25V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 200V 7.5A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 7.5A (Tc) | 10V | 325 mOhm @ 3.75A, 10V | 5.25V @ 1mA | 15nC @ 10V | ±30V | 755pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 100V 10A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4V, 10V | 133 mOhm @ 5A, 10V | 2.5V @ 1mA | 18nC @ 10V | ±20V | 700pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 190V 7.5A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 190V | 7.5A (Tc) | 4V, 10V | 336 mOhm @ 3.8A, 10V | 2.5V @ 1mA | 30nC @ 10V | ±20V | 1100pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 15A POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290 mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 30A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 30A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 35A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102 mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | ±20V | 3000pF @ 25V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 76A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 55 mOhm @ 38A, 10V | 5V @ 1mA | 115nC @ 10V | ±30V | 7000pF @ 25V | - | 740W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
1.2V DRIVE NCH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | - | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 350mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 45V 700MA TUMT5 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 45V | 700mA (Ta) | 4V, 10V | 800 mOhm @ 700mA, 10V | 2.5V @ 1mA | 1.7nC @ 5V | ±20V | 120pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A UMT3F |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET P-CH 12V 6A TSMT8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.5V, 4.5V | 23 mOhm @ 6A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | ±10V | 2800pF @ 6V | - | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A 8PSOP |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 12.6 mOhm @ 13A, 10V | 2.5V @ 1mA | 12nC @ 10V | ±20V | 650pF @ 15V | - | 3W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-PSOP | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 2.2 Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 1.2V DRIVE EMT3FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2 Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A HSMT8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 15.2 mOhm @ 8A, 10V | 2.5V @ 1mA | 14.5nC @ 10V | ±20V | 660pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A VMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2 Ohm @ 200mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A UMT3F |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2 Ohm @ 200mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET N-CH 20V 1A VML1006 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.2V, 4.5V | 470 mOhm @ 500mA, 4.5V | 1V @ 1mA | - | ±8V | 40pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | DFN1006-3 (VML1006) | SC-101, SOT-883 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | ±20V | 70pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 30V 300MA SOT-323 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 4V, 10V | 1.2 Ohm @ 300mA, 10V | - | - | ±20V | 20pF @ 10V | - | 200mW (Ta) | - | SMD Поверхностный монтаж | UMT3 | SC-70, SOT-323 |