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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
TSM170N06PQ56 RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 60V 44A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)60V44A (Tc)4.5V, 10V17 mOhm @ 8A, 10V2.5V @ 250µA29nC @ 10V±20V1556pF @ 30V
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73.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM055N03EPQ56 RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V80A (Tc)4.5V, 10V5.5 mOhm @ 20A, 10V2.5V @ 250µA11.1nC @ 4.5V±20V1210pF @ 25V
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74W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM055N03PQ56 RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V80A (Tc)4.5V, 10V5.5 mOhm @ 20A, 10V2.5V @ 250µA11.1nC @ 4.5V±20V1160pF @ 25V
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74W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM230N06CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 34A TO252 в производствеN-ChannelMOSFET (Metal Oxide)60V34A (Tc)4.5V, 10V23 mOhm @ 20A, 10V2.5V @ 250µA28nC @ 10V±20V1680pF @ 25V
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104W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM060N03CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 70A TO252 в производствеN-ChannelMOSFET (Metal Oxide)30V70A (Tc)4.5V, 10V6 mOhm @ 20A, 10V2.5V @ 250µA11.1nC @ 4.5V±20V1160pF @ 25V
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54W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM230N06PQ56 RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 60V 44A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)60V44A (Tc)4.5V, 10V23 mOhm @ 20A, 10V2.5V @ 250µA28nC @ 10V±20V1680pF @ 20V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM4436CS RLG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 8A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)60V8A (Ta)4.5V, 10V36 mOhm @ 4.6A, 10V3V @ 250µA10.5nC @ 4.5V±20V1100pF @ 30V
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2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TSM088NA03CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 61A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V61A (Tc)4.5V, 10V8.8 mOhm @ 13A, 10V2.5V @ 250µA12.6nC @ 10V±20V750pF @ 15V
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56W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM042N03CS RLG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 30A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V30A (Tc)4.5V, 10V4.2 mOhm @ 12A, 10V2.5V @ 250µA24nC @ 4.5V±20V2200pF @ 25V
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7W (Tc)175°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TSM060N03ECP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 70A TO252 в производствеN-ChannelMOSFET (Metal Oxide)30V70A (Tc)4.5V, 10V6 mOhm @ 20A, 10V2.5V @ 250µA11.1nC @ 4.5V±20V1210pF @ 25V
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54W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM170N06CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 38A TO252 в производствеN-ChannelMOSFET (Metal Oxide)60V38A (Tc)4.5V, 10V17 mOhm @ 20A, 10V2.5V @ 250µA28.5nC @ 10V±20V900pF @ 25V
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46W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM085P03CS RLG
 Taiwan Semiconductor Corporation MOSFET P-CHANNEL 30V 34A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)30V34A (Tc)4.5V, 10V8.5 mOhm @ 13A, 10V2.5V @ 250µA56nC @ 10V±20V3216pF @ 15V
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14W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TSM120N06LCS RLG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 23A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)60V23A (Tc)4.5V, 10V12 mOhm @ 10A, 10V2.5V @ 250µA37nC @ 10V±20V2193pF @ 30V
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12.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TSM900N10CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 100V 15A TO252 в производствеN-ChannelMOSFET (Metal Oxide)100V15A (Tc)4.5V, 10V90 mOhm @ 5A, 10V2.5V @ 250µA9.3nC @ 10V±20V1480pF @ 50V
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50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM1NB60CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 1A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V1A (Tc)10V10 Ohm @ 500mA, 10V4.5V @ 250µA6.1nC @ 10V±30V138pF @ 25V
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39W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM9409CS RLG
 Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 3.5A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)60V3.5A (Ta)4.5V, 10V155 mOhm @ 3.5A, 10V1V @ 250µA6nC @ 10V±20V540pF @ 30V
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3W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TSM5NC50CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 500V 5A TO252 в производствеN-ChannelMOSFET (Metal Oxide)500V5A (Tc)10V1.38 Ohm @ 2.4A, 10V4.5V @ 250µA15nC @ 10V±30V586pF @ 50V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM120N06LCR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 60V 54A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)60V54A (Tc)4.5V, 10V12 mOhm @ 10A, 10V2.5V @ 250µA36.5nC @ 10V±20V2116pF @ 30V
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69W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM2N60SCW RPG
 Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 в производствеN-ChannelMOSFET (Metal Oxide)600V600mA (Tc)10V5 Ohm @ 600mA, 10V4V @ 250µA13nC @ 10V±30V435pF @ 25V
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2.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
TSM4NB65CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 650V 4A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)650V4A (Tc)10V3.37 Ohm @ 2A, 10V4.5V @ 250µA13.46nC @ 10V±30V549pF @ 25V
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70W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM036N03PQ56 RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 124A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V124A (Tc)4.5V, 10V3.6 mOhm @ 22A, 10V2.5V @ 250µA50nC @ 10V±20V2530pF @ 15V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM040N03CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 90A TO252 в производствеN-ChannelMOSFET (Metal Oxide)30V90A (Tc)4.5V, 10V4 mOhm @ 24A, 10V2.5V @ 250µA53nC @ 4.5V±20V2200pF @ 25V
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88W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM110NB04LCR RLG
 Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH в производствеN-ChannelMOSFET (Metal Oxide)40V12A (Ta), 54A (Tc)4.5V, 10V11 mOhm @ 12A, 10V2.5V @ 250µA23nC @ 10V±20V1269pF @ 20V
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3.1W (Ta), 68W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerLDFN
TSM220NB06CR RLG
 Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH в производствеN-ChannelMOSFET (Metal Oxide)60V8A (Ta), 35A (Tc)10V22 mOhm @ 8A, 10V4V @ 250µA23nC @ 10V±20V1454pF @ 30V
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3.1W (Ta), 68W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerLDFN
TSM220NB06LCR RLG
 Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH в производствеN-ChannelMOSFET (Metal Oxide)60V8A (Ta), 35A (Tc)4.5V, 10V22 mOhm @ 8A, 10V2.5V @ 250µA23nC @ 10V±20V1314pF @ 30V
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3.1W (Ta), 68W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerLDFN
TSM4NB60CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V4A (Tc)10V2.5 Ohm @ 2A, 10V4.5V @ 250µA14.5nC @ 10V±30V500pF @ 25V
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50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM045NA03CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V108A (Tc)4.5V, 10V4.5 mOhm @ 18A, 10V2.5V @ 250µA19nC @ 10V±20V1194pF @ 15V
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89W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM2N60ECP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 2A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V2A (Tc)10V4 Ohm @ 1A, 10V5V @ 250µA9.5nC @ 10V±30V362pF @ 25V
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52.1W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM130NB06CR RLG
 Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH в производствеN-ChannelMOSFET (Metal Oxide)60V10A (Ta), 51A (Tc)10V13 mOhm @ 10A, 10V4V @ 250µA36nC @ 10V±20V2380pF @ 30V
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3.1W (Ta), 83W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerLDFN
TSM130NB06LCR RLG
 Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH в производствеN-ChannelMOSFET (Metal Oxide)60V10A (Ta), 51A (Tc)4.5V, 10V13 mOhm @ 10A, 10V2.5V @ 250µA37nC @ 10V±20V2175pF @ 30V
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3.1W (Ta), 83W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerLDFN
TSM033NA03CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 129A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V129A (Tc)4.5V, 10V3.3 mOhm @ 21A, 10V2.5V @ 250µA31nC @ 10V±20V1850pF @ 15V
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96W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM070NA04LCR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 40V 91A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)40V91A (Tc)4.5V, 10V7 mOhm @ 14A, 10V2.5V @ 250µA23.5nC @ 10V±20V1469pF @ 20V
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113W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM160P04LCRHRLG
 Taiwan Semiconductor Corporation MOSFET P-CH 40V 51A 8PDFN в производствеP-ChannelMOSFET (Metal Oxide)40V51A (Tc)4.5V, 10V16 mOhm @ 10A, 10V2.5V @ 250µA48nC @ 10V±20V2712pF @ 20V
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69W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM4N60ECP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V4A (Tc)10V2.5 Ohm @ 2A, 10V5V @ 250µA12nC @ 10V±30V545pF @ 25V
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86.2W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM038N04LCP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 40V 135A TO252 в производствеN-ChannelMOSFET (Metal Oxide)40V135A (Tc)4.5V, 10V3.8 mOhm @ 19A, 10V2.5V @ 250µA104nC @ 10V±20V5509pF @ 20V
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125W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM70NB1R4CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 3A TO252 в производствеN-ChannelMOSFET (Metal Oxide)700V3A (Tc)10V1.4 Ohm @ 1.2A, 10V4V @ 250µA7.4nC @ 10V±30V317pF @ 100V
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28W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM60NB600CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 7A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V7A (Tc)10V600 mOhm @ 2.1A, 10V4V @ 250µA13nC @ 10V±30V516pF @ 100V
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63W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM60NB900CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V4A (Tc)10V900 mOhm @ 1.2A, 10V4V @ 250µA9.6nC @ 10V±30V315pF @ 100V
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36.8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM160N10LCR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 100V 46A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)100V46A (Tc)4.5V, 10V16 mOhm @ 8A, 10V2.5V @ 250µA73nC @ 10V±20V4431pF @ 50V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM650N15CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 150V 24A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)150V24A (Tc)6V, 10V65 mOhm @ 4A, 10V4V @ 250µA36nC @ 10V±20V1829pF @ 75V
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96W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM026NA03CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 168A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V168A (Tc)4.5V, 10V2.6 mOhm @ 24A, 10V2.5V @ 250µA41nC @ 10V±20V2540pF @ 15V
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125W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM70N1R4CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CH 700V 3.3A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)700V3.3A (Tc)10V1.4 Ohm @ 1.2A, 10V4V @ 250µA7.7nC @ 10V±30V370pF @ 100V
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38W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM3N80CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 3A TO252 в производствеN-ChannelMOSFET (Metal Oxide)800V3A (Tc)10V4.2 Ohm @ 1.5A, 10V4V @ 250µA19nC @ 10V±30V696pF @ 25V
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94W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM3N90CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CH 900V 2.5A TO252 в производствеN-ChannelMOSFET (Metal Oxide)900V2.5A (Tc)10V5.1 Ohm @ 1.25A, 10V4V @ 250µA17nC @ 10V±30V748pF @ 25V
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94W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM089N08LCR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 80V 67A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)80V67A (Tc)4.5V, 10V8.9 mOhm @ 12A, 10V2.5V @ 250µA90nC @ 10V±20V6119pF @ 40V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM60N750CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)600V6A (Tc)10V750 mOhm @ 3A, 10V4V @ 250µA10.8nC @ 10V±30V554pF @ 100V
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62.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM60NB380CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CH 600V 9.5A TO252 в производствеN-ChannelMOSFET (Metal Oxide)600V9.5A (Tc)10V380 mOhm @ 2.85A, 10V4V @ 250µA19.4nC @ 10V±30V795pF @ 100V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM70N750CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 6A TO252 в производствеN-ChannelMOSFET (Metal Oxide)700V6A (Tc)10V750 mOhm @ 1.8A, 10V4V @ 250µA10.7nC @ 10V±30V555pF @ 100V
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62.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
TSM018NA03CR RLG
 Taiwan Semiconductor Corporation MOSFET N-CH 30V 185A 8PDFN в производствеN-ChannelMOSFET (Metal Oxide)30V185A (Tc)4.5V, 10V1.8 mOhm @ 29A, 10V2.5V @ 250µA56nC @ 10V±20V3479pF @ 15V
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104W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PDFN (5x6)8-PowerTDFN
TSM70N10CP ROG
 Taiwan Semiconductor Corporation MOSFET N-CHANNEL 100V 70A TO252 в производствеN-ChannelMOSFET (Metal Oxide)100V70A (Tc)10V13 mOhm @ 30A, 10V4V @ 250µA145nC @ 10V±20V4300pF @ 30V
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120W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
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