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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 25A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 18 mOhm @ 12A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 21W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 30MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30mA (Tc) | 0V, 10V | 800 Ohm @ 16mA, 10V | 1V @ 8µA | 1.18nC @ 4.5V | ±20V | 51.42pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 150V 1.4A SOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 1.4A (Tc) | 6V, 10V | 480 mOhm @ 1.1A, 10V | 3.5V @ 250µA | 8nC @ 10V | ±20V | 332pF @ 10V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 30V 36A 8PDFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 15 mOhm @ 10A, 10V | 2.5V @ 250µA | 29.3nC @ 10V | ±20V | 1829pF @ 15V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 78A 8PDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 3.8 mOhm @ 19A, 10V | 2.5V @ 250µA | 25nC @ 4.5V | ±20V | 2557pF @ 15V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 3A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.4 Ohm @ 900mA, 10V | 4V @ 250µA | 7.12nC @ 10V | ±30V | 257.3pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 32A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 4.5V, 10V | 37 mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1598pF @ 30V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 1000V 2.5A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 2.5A (Tc) | 10V | 6 Ohm @ 1.25A, 10V | 5.5V @ 250µA | 19nC @ 10V | ±30V | 664pF @ 25V | - | 99W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 150V 9A 8SOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Tc) | 6V, 10V | 65 mOhm @ 4A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1783pF @ 75V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 66A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 66A (Tc) | 10V | 7.3 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 4382pF @ 30V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2 Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 11A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 380 mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | ±30V | 981pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 38A TO251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Tc) | 4.5V, 10V | 17 mOhm @ 20A, 10V | 2.5V @ 250µA | 28.5nC @ 10V | ±20V | 900pF @ 25V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A ITO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37 Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 7A ITO220S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2 Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1169pF @ 50V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5A ITO220S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38 Ohm @ 1.7A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 5A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 10A ITO220S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750 mOhm @ 2.5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1652pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 650V 10A ITO220S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 900 mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 1650pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 100A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 6.7 mOhm @ 30A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 4382pF @ 30V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 8A TO262S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600 mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.6 Ohm @ 3A, 10V | 4.5V @ 250µA | 18.3nC @ 10V | ±30V | 872pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 81A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 81A (Tc) | 10V | 10 mOhm @ 40A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 3900pF @ 30V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 80A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 8 mOhm @ 40A, 10V | 4V @ 250µA | 91.5nC @ 10V | ±20V | 3905pF @ 30V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO262S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950 mOhm @ 2A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220S |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380 mOhm @ 2.7A, 10V | 4V @ 250µA | 21nC @ 10V | ±30V | 810pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900 mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4.5A ITO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900 mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 480pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 4A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 4A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 14A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440 mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 14A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440 mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A TO251 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 190A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 190A (Tc) | 10V | 4.2 mOhm @ 90A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 8600pF @ 30V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 18A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 13A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 260 mOhm @ 3.9A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1273pF @ 100V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A ITO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 9A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2470pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
