Taiwan Semiconductor агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - TSM70N900CP ROG TSM340N06CH X0G - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
TSM70N900CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CH 700V 4.5A TO252	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	4.5A (Tc)	10V	900 mOhm @ 1.5A, 10V	4V @ 250µA	9.7nC @ 10V	±30V	482pF @ 100V	-	50W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM340N06CH X0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 30A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	30A (Tc)	4.5V, 10V	34 mOhm @ 15A, 10V	2.5V @ 250µA	16.6nC @ 10V	±20V	1180pF @ 30V	-	66W (Tc)	150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
TSM024NA04LCR RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 170A 8PDFN	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	170A (Tc)	4.5V, 10V	2.4 mOhm @ 25A, 10V	2.5V @ 250µA	67nC @ 10V	±20V	4224pF @ 20V	-	125W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PDFN (5x6)	8-PowerTDFN
TSM033NA04LCR RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 141A 8PDFN	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	141A (Tc)	4.5V, 10V	3.3 mOhm @ 20A, 10V	2.5V @ 250µA	47nC @ 10V	±20V	3130pF @ 20V	-	125W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PDFN (5x6)	8-PowerTDFN
TSM4459CS RLG	Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 30V 17A 8SOP	в производстве	P-Channel	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	5.2 mOhm @ 9A, 10V	3V @ 250µA	78.4nC @ 4.5V	±20V	6205pF @ 15V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOP	8-SOIC (0.154", 3.90mm Width)
TSM60NB1R4CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 3A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	1.4 Ohm @ 900mA, 10V	4V @ 250µA	7.12nC @ 10V	±30V	257.3pF @ 100V	-	28.4W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM015NA03CR RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 30V 205A 8PDFN	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	205A (Tc)	4.5V, 10V	1.5 mOhm @ 32A, 10V	2.5V @ 250µA	67nC @ 10V	±20V	4243pF @ 15V	-	104W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-PDFN (5x6)	8-PowerTDFN
TSM045NB06CR RLG	Taiwan Semiconductor Corporation	MOSFET SINGLE N-CHANNEL TRENCH	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	16A (Ta), 104A (Tc)	10V	5 mOhm @ 16A, 10V	4V @ 250µA	104nC @ 10V	±20V	6870pF @ 30V	-	3.1W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-PDFN (5x6)	8-PowerLDFN
TSM048NB06LCR RLG	Taiwan Semiconductor Corporation	MOSFET SINGLE N-CHANNEL TRENCH	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	16A (Ta), 107A (Tc)	4.5V, 10V	4.8 mOhm @ 16A, 10V	2.5V @ 250µA	105nC @ 10V	±20V	6253pF @ 30V	-	3.1W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	8-PDFN (5x6)	8-PowerLDFN
TSM4NB65CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 650V 4A TO251	устарелый	N-Channel	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	3.37 Ohm @ 2A, 10V	4.5V @ 250µA	13.46nC @ 10V	±30V	549pF @ 25V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM900N10CH X0G	Taiwan Semiconductor Corporation	MOSFET N-CH 100V 15A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	15A (Tc)	4.5V, 10V	90 mOhm @ 5A, 10V	2.5V @ 250µA	9.3nC @ 10V	±20V	1480pF @ 50V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
TSM1NB60CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 1A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	10 Ohm @ 500mA, 10V	4.5V @ 250µA	6.1nC @ 10V	±30V	138pF @ 25V	-	39W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60N600CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 8A TO252	устарелый	N-Channel	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	600 mOhm @ 4A, 10V	4V @ 250µA	13nC @ 10V	±30V	743pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM70N600CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 700V 8A TO252	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	600 mOhm @ 4A, 10V	4V @ 250µA	12.6nC @ 10V	±30V	743pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM2N60ECH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 2A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4 Ohm @ 1A, 10V	5V @ 250µA	9.5nC @ 10V	±30V	362pF @ 25V	-	52.1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM600N25ECH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 250V 8A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	600 mOhm @ 4A, 10V	5V @ 250µA	8.4nC @ 10V	±30V	423pF @ 25V	-	52W (Tc)	150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM2N100CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 1000V 1.85A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	1.85A (Tc)	10V	8.5 Ohm @ 900mA, 10V	5.5V @ 250µA	17nC @ 10V	±30V	625pF @ 25V	-	77W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60N380CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 11A TO252	устарелый	N-Channel	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	380 mOhm @ 5.5A, 10V	4V @ 250µA	20.5nC @ 10V	±30V	1040pF @ 100V	-	125W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM4N60ECH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	2.5 Ohm @ 2A, 10V	5V @ 250µA	12nC @ 10V	±30V	545pF @ 25V	-	86.2W (Tc)	150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60NB900CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	900 mOhm @ 1.2A, 10V	4V @ 250µA	9.6nC @ 10V	±30V	315pF @ 100V	-	36.8W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM7NC65CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 650V 7A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	1.35 Ohm @ 2A, 10V	4.5V @ 250µA	24nC @ 10V	±30V	1169pF @ 50V	-	44.6W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM70N1R4CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 700V 3.3A TO251	устарелый	N-Channel	MOSFET (Metal Oxide)	700V	3.3A (Tc)	10V	1.4 Ohm @ 1.2A, 10V	4V @ 250µA	7.7nC @ 10V	±30V	370pF @ 100V	-	38W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM3N80CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 800V 3A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4.2 Ohm @ 1.5A, 10V	4V @ 250µA	19nC @ 10V	±30V	696pF @ 25V	-	94W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM3N90CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 900V 2.5A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	900V	2.5A (Tc)	10V	5.1 Ohm @ 1.25A, 10V	4V @ 250µA	17nC @ 10V	±30V	748pF @ 25V	-	94W (Tc)	150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60N750CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 6A TO251	устарелый	N-Channel	MOSFET (Metal Oxide)	600V	6A (Tc)	10V	750 mOhm @ 3A, 10V	4V @ 250µA	10.8nC @ 10V	±30V	554pF @ 100V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60NB600CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 7A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	600 mOhm @ 2.1A, 10V	4V @ 250µA	13nC @ 10V	±30V	516pF @ 100V	-	63W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM70N750CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 700V 6A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	6A (Tc)	10V	750 mOhm @ 1.8A, 10V	4V @ 250µA	10.7nC @ 10V	±30V	555pF @ 100V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM70N900CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 700V 4.5A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	4.5A (Tc)	10V	900 mOhm @ 1.5A, 10V	4V @ 250µA	9.7nC @ 10V	±30V	482pF @ 100V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60NB600CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 8A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	600 mOhm @ 1.7A, 10V	4V @ 250µA	16nC @ 10V	±30V	528pF @ 100V	-	41.7W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM80N950CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 800V 6A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	950 mOhm @ 3A, 10V	4V @ 250µA	19.6nC @ 10V	±30V	691pF @ 100V	-	110W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60N600CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 8A TO251	устарелый	N-Channel	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	600 mOhm @ 4A, 10V	4V @ 250µA	13nC @ 10V	±30V	743pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60NB380CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 9.5A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	380 mOhm @ 2.85A, 10V	4V @ 250µA	19.4nC @ 10V	±30V	795pF @ 100V	-	83W (Tc)	-50°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM80N1R2CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 5.5A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	5.5A (Tc)	10V	1.2 Ohm @ 2.75A, 10V	4V @ 250µA	19.4nC @ 10V	±30V	685pF @ 100V	-	110W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM70N600CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 700V 8A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	600 mOhm @ 4A, 10V	4V @ 250µA	12.6nC @ 10V	±30V	743pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM60N380CZ C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 11A TO220	устарелый	N-Channel	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	380 mOhm @ 5.5A, 10V	4V @ 250µA	20.5nC @ 10V	±30V	1040pF @ 100V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TSM70N380CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 700V 11A TO251	в производстве	N-Channel	MOSFET (Metal Oxide)	700V	11A (Tc)	10V	380 mOhm @ 3.3A, 10V	4V @ 250µA	18.8nC @ 10V	±30V	981pF @ 100V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
TSM160N10CZ C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 100V 160A TO220	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	160A (Tc)	10V	5.5 mOhm @ 30A, 10V	4V @ 250µA	154nC @ 10V	±20V	9840pF @ 30V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
TSM60NB190CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 18A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	190 mOhm @ 3.7A, 10V	4V @ 250µA	32nC @ 10V	±30V	1311pF @ 100V	-	59.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM60NB150CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 24A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	150 mOhm @ 4.3A, 10V	4V @ 250µA	43nC @ 10V	±30V	1765pF @ 100V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM9N90ECI C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 900V 9A ITO220	в производстве	N-Channel	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	1.4 Ohm @ 4.5A, 10V	4V @ 250µA	72nC @ 10V	±30V	2470pF @ 25V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
TSM7N90CI C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 900V 7A ITO220	в производстве	N-Channel	MOSFET (Metal Oxide)	900V	7A (Tc)	10V	1.9 Ohm @ 3.5A, 10V	4V @ 250µA	49nC @ 10V	±30V	1969pF @ 25V	-	40.3W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
TSM80N400CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 800V 12A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	400 mOhm @ 2.7A, 10V	4V @ 250µA	51nC @ 10V	±30V	1848pF @ 100V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM60NB099CF C0G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 38A ITO220S	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	99 mOhm @ 5.3A, 10V	4V @ 250µA	62nC @ 10V	±30V	2587pF @ 100V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
TSM60NB099CZ C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 38A TO220	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	99 mOhm @ 11.3A, 10V	4V @ 250µA	62nC @ 10V	±30V	2587pF @ 100V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TSM60NB099PW C1G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 38A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	99 mOhm @ 11.7A, 10V	4V @ 250µA	62nC @ 10V	±30V	2587pF @ 100V	-	329W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
TSM60NB041PW C1G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 78A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	78A (Tc)	10V	41 mOhm @ 21.7A, 10V	4V @ 250µA	139nC @ 10V	±30V	6120pF @ 100V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
TSM2N7002KCX RFG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 300MA SOT23	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	300mA (Ta)	4.5V, 10V	2 Ohm @ 300mA, 10V	2.5V @ 250µA	0.4nC @ 4.5V	±20V	30pF @ 25V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM650P03CX RFG	Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 30V 4.1A SOT23	в производстве	P-Channel	MOSFET (Metal Oxide)	30V	4.1A (Tc)	2.5V, 10V	65 mOhm @ 4A, 10V	900mV @ 250µA	6.4nC @ 4.5V	±12V	810pF @ 15V	-	1.56W (Tc)	150°C (TJ)	SMD Поверхностный монтаж	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM4424CS RVG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 20V 8A 8SOP	в производстве	N-Channel	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	11.2nC @ 4.5V	±8V	500pF @ 10V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOP	8-SOIC (0.154", 3.90mm Width)
TSM4806CS RLG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 20V 28A 8SOP	в производстве	N-Channel	MOSFET (Metal Oxide)	20V	28A (Ta)	1.8V, 4.5V	20 mOhm @ 20A, 4.5V	1V @ 250µA	12.3nC @ 4.5V	±8V	961pF @ 15V	-	2W (Ta)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOP	8-SOIC (0.154", 3.90mm Width)

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные