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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
TK290A60Y,S4X
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 11.5A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V11.5A (Tc)10V290 mOhm @ 5.8A, 10V4V @ 450µA25nC @ 10V±30V730pF @ 300V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
SSM3K37CT,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.2A CST3 в производствеN-ChannelMOSFET (Metal Oxide)20V200mA (Ta)1.5V, 4.5V2.2 Ohm @ 100mA, 4.5V1V @ 1mA
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±10V12pF @ 10V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
SSM3K16CT(TPL3)
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A CST3 S-MOS устарелыйN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.5V, 4V3 Ohm @ 10mA, 4V1.1V @ 100µA
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±10V9.3pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
SSM3K15CT(TPL3)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A CST3 устарелыйN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V4 Ohm @ 10mA, 4V1.5V @ 100µA
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±20V7.8pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
SSM5N15FU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A USV в производствеN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V4 Ohm @ 10mA, 4V
-
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±20V7.8pF @ 3V
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200mW (Ta)150°C (TJ)SMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
SSM3J112TU,LF
 Toshiba Semiconductor and Storage X34 PB-F UFM S-MOS LF TRANSIST в производствеP-ChannelMOSFET (Metal Oxide)30V1.1A (Ta)4V, 10V390 mOhm @ 500mA, 10V1.8V @ 100µA
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±20V86pF @ 15V
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800mW (Ta)150°CSMD Поверхностный монтажUFM3-SMD, Flat Leads
TPCC8093,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)20V21A (Ta)2.5V, 4.5V5.8 mOhm @ 10.5A, 4.5V1.2V @ 500µA16nC @ 5V±12V1860pF @ 10V
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1.9W (Ta), 30W (Tc)150°CSMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPC6113(TE85L,F,M)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A VS6 в производствеP-ChannelMOSFET (Metal Oxide)20V5A (Ta)2.5V, 4.5V55 mOhm @ 2.5A, 4.5V1.2V @ 200µA10nC @ 5V±12V690pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажVS-6 (2.9x2.8)SOT-23-6 Thin, TSOT-23-6
TPC6110(TE85L,F,M)
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 4.5A VS6 в производствеP-ChannelMOSFET (Metal Oxide)30V4.5A (Ta)
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56 mOhm @ 2.2A, 10V2V @ 100µA14nC @ 10V
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510pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажVS-6 (2.9x2.8)SOT-23-6 Thin, TSOT-23-6
TPN11003NL,LQ
 Toshiba Semiconductor and Storage MOSFET N CH 30V 11A 8TSON-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V11A (Tc)4.5V, 10V11 mOhm @ 5.5A, 10V2.3V @ 100µA7.5nC @ 10V±20V660pF @ 15V
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700mW (Ta), 19W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPC8134,LQ(S
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 5A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)40V5A (Ta)4.5V, 10V52 mOhm @ 2.5A, 10V2V @ 100µA20nC @ 10V+20V, -25V890pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TP89R103NL,LQ
 Toshiba Semiconductor and Storage MOSFET N CH 30V 15A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V15A (Tc)4.5V, 10V9.1 mOhm @ 7.5A, 10V2.3V @ 100µA9.8nC @ 10V±20V820pF @ 15V
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1W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPCP8J01(TE85L,F,M
 Toshiba Semiconductor and Storage X35 PB-FREE POWER MOSFET TRANSIS в производствеP-ChannelMOSFET (Metal Oxide)32V5.5A (Ta)4V, 10V35 mOhm @ 3A, 10V2V @ 1mA34nC @ 10V±20V1760pF @ 10V
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2.14W (Ta)150°C (TJ)SMD Поверхностный монтажPS-88-SMD, Flat Lead
TPC8067-H,LQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V9A (Ta)4.5V, 10V25 mOhm @ 4.5A, 10V2.3V @ 100µA9.5nC @ 10V±20V690pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPC8129,LQ(S
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 9A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)30V9A (Ta)4.5V, 10V22 mOhm @ 4.5A, 10V2V @ 200µA39nC @ 10V+20V, -25V1650pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPN14006NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV в производствеN-ChannelMOSFET (Metal Oxide)60V13A (Ta)6.5V, 10V14 mOhm @ 6.5A, 10V4V @ 200µA15nC @ 10V±20V1300pF @ 30V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPC8092,LQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 15A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V15A (Ta)4.5V, 10V9 mOhm @ 7.5A, 10V2.3V @ 200µA25nC @ 10V±20V1800pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPH6R004PL,LQ
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)40V87A (Ta), 49A (Tc)4.5V, 10V6 mOhm @ 24.5A, 10V2.4V @ 200µA30nC @ 10V±20V2700pF @ 20V
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1.8W (Ta), 81W (Tc)175°CSMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TJ15P04M3,RQ(S
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 15A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V15A (Ta)4.5V, 10V36 mOhm @ 7.5A, 10V2V @ 100µA26nC @ 10V±20V1100pF @ 10V
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29W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK20P04M1,RQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V20A (Ta)4.5V, 10V29 mOhm @ 10A, 10V2.3V @ 100µA15nC @ 10V±20V985pF @ 10V
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27W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TPN6R303NC,LQ
 Toshiba Semiconductor and Storage MOSFET N CH 30V 20A 8TSON-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V20A (Ta)4.5V, 10V6.3 mOhm @ 10A, 10V2.3V @ 200µA24nC @ 10V±20V1370pF @ 15V
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700mW (Ta), 19W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPC8132,LQ(S
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 7A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)40V7A (Ta)4.5V, 10V25 mOhm @ 3.5A, 10V2V @ 200µA34nC @ 10V+20V, -25V1580pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPC8066-H,LQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V11A (Ta)4.5V, 10V16 mOhm @ 5.5A, 10V2.3V @ 100µA15nC @ 10V±20V1100pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TPH6R003NL,LQ
 Toshiba Semiconductor and Storage MOSFET N CH 30V 38A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V38A (Tc)4.5V, 10V6 mOhm @ 19A, 10V2.3V @ 200µA17nC @ 10V±20V1400pF @ 15V
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1.6W (Ta), 34W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPN2R805PL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)45V139A (Ta), 80A (Tc)4.5V, 10V2.8 mOhm @ 40A, 10V2.4V @ 300µA39nC @ 10V±20V3.2nF @ 22.5V
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2.67W (Ta), 104W (Tc)175°CSMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN4R203NC,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 30V 23A 8TSON-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V23A (Ta)4.5V, 10V4.2 mOhm @ 11.5A, 10V2.3V @ 200µA24nC @ 10V±20V1370pF @ 15V
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700mW (Ta), 22W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TK2P60D(TE16L1,NQ)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 2A PW-MOLD в производствеN-ChannelMOSFET (Metal Oxide)600V2A (Ta)10V4.3 Ohm @ 1A, 10V4.4V @ 1mA7nC @ 10V±30V280pF @ 25V
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60W (Tc)150°C (TJ)SMD Поверхностный монтажPW-MOLDTO-252-3, DPak (2 Leads + Tab), SC-63
TPH6R30ANL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)100V66A (Ta), 45A (Tc)4.5V, 10V6.3 mOhm @ 22.5A, 10V2.5V @ 500µA55nC @ 10V±20V4300pF @ 50V
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2.5W (Ta), 54W (Tc)150°CSMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPC8065-H,LQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 13A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V11.6 mOhm @ 6.5A, 10V2.3V @ 200µA20nC @ 10V±20V1350pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
SSM3J118TU(TE85L)
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 1.4A UFM в производствеP-ChannelMOSFET (Metal Oxide)30V1.4A (Ta)4V, 10V240 mOhm @ 650mA, 10V
-
-
±20V137pF @ 15V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
TJ8S06M3L(T6L1,NQ)
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 8A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)60V8A (Ta)6V, 10V104 mOhm @ 4A, 10V3V @ 1mA19nC @ 10V+10V, -20V890pF @ 10V
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27W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK10S04K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 10A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V10A (Ta)6V, 10V28 mOhm @ 5A, 10V3V @ 1mA10nC @ 10V±20V410pF @ 10V
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25W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK8S06K3L(T6L1,NQ)
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 8A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)60V8A (Ta)6V, 10V54 mOhm @ 4A, 10V3V @ 1mA10nC @ 10V±20V400pF @ 10V
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25W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK3P50D,RQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 3A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)500V3A (Ta)10V3 Ohm @ 1.5A, 10V4.4V @ 1mA7nC @ 10V±30V280pF @ 25V
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60W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK60P03M1,RQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)30V60A (Ta)4.5V, 10V6.4 mOhm @ 30A, 10V2.3V @ 500µA40nC @ 10V±20V2700pF @ 10V
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63W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TJ10S04M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 10A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V10A (Ta)6V, 10V44 mOhm @ 5A, 10V3V @ 1mA19nC @ 10V+10V, -20V930pF @ 10V
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27W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TJ15S06M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 15A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)60V15A (Ta)6V, 10V50 mOhm @ 7.5A, 10V3V @ 1mA36nC @ 10V+10V, -20V1770pF @ 10V
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41W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TJ20S04M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 20A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V20A (Ta)6V, 10V22.2 mOhm @ 10A, 10V3V @ 1mA37nC @ 10V+10V, -20V1850pF @ 10V
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41W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK20S04K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V20A (Ta)6V, 10V14 mOhm @ 10A, 10V3V @ 1mA18nC @ 10V±20V820pF @ 10V
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38W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK20S06K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 20A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)60V20A (Ta)6V, 10V29 mOhm @ 10A, 10V3V @ 1mA18nC @ 10V±20V780pF @ 10V
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38W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TPH12008NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 80V 24A SOP в производствеN-ChannelMOSFET (Metal Oxide)80V24A (Tc)10V12.3 mOhm @ 12A, 10V4V @ 300µA22nC @ 10V±20V1900pF @ 40V
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1.6W (Ta), 48W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPC8133,LQ(S
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 9A 8SOP в производствеP-ChannelMOSFET (Metal Oxide)40V9A (Ta)4.5V, 10V15 mOhm @ 4.5A, 10V2V @ 500µA64nC @ 10V+20V, -25V2900pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.154", 3.90mm Width)
TK30S06K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 30A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)60V30A (Ta)6V, 10V18 Ohm @ 15A, 10V3V @ 1mA28nC @ 10V±20V1350pF @ 10V
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58W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK35S04K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 35A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V35A (Ta)6V, 10V10.3 mOhm @ 17.5A, 10V3V @ 1mA28nC @ 10V±20V1370pF @ 10V
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58W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TPN2R503NC,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 30V 40A 8TSON-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V40A (Ta)4.5V, 10V2.5 mOhm @ 20A, 10V2.3V @ 500µA40nC @ 10V±20V2230pF @ 15V
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700mW (Ta), 35W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPH2010FNH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)250V5.6A (Ta)10V198 mOhm @ 2.8A, 10V4V @ 200µA7nC @ 10V±20V600pF @ 100V
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1.6W (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8128,LQ(CM
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 34A 8SOP-ADV в производствеP-ChannelMOSFET (Metal Oxide)30V34A (Ta)4.5V, 10V4.8 mOhm @ 17A, 10V2V @ 500µA115nC @ 10V+20V, -25V4800pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK5P50D(T6RSS-Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)500V5A (Ta)10V1.5 Ohm @ 2.5A, 10V4.4V @ 1mA11nC @ 10V±30V490pF @ 25V
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80W (Tc)150°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
TPN1110ENH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)200V7.2A (Ta)10V114 mOhm @ 3.6A, 10V4V @ 200µA7nC @ 10V±20V600pF @ 100V
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700mW (Ta), 39W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TK5P53D(T6RSS-Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 525V 5A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)525V5A (Ta)10V1.5 Ohm @ 2.5A, 10V4.4V @ 1mA11nC @ 10V±30V540pF @ 25V
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80W (Tc)150°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
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