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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
TPH1110ENH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)200V7.2A (Ta)10V114 mOhm @ 3.6A, 10V4V @ 200µA7nC @ 10V±20V600pF @ 100V
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1.6W (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TJ40S04M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 40A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V40A (Ta)6V, 10V9.1 mOhm @ 20A, 10V3V @ 1mA83nC @ 10V+10V, -20V4140pF @ 10V
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68W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8056-H,LQ(M
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 48A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V48A (Ta)4.5V, 10V2.2 mOhm @ 24A, 10V2.3V @ 1mA74nC @ 10V±20V6200pF @ 10V
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1.6W (Ta), 63W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK6P53D(T6RSS-Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 525V 6A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)525V6A (Ta)10V1.3 Ohm @ 3A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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100W (Tc)150°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
TK7P50D(T6RSS-Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)500V7A (Ta)10V1.22 Ohm @ 3.5A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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100W (Tc)150°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
TJ30S06M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 30A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)60V30A (Ta)6V, 10V21.8 mOhm @ 15A, 10V3V @ 1mA80nC @ 10V+10V, -20V3950pF @ 10V
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68W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TPH8R008NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 80V 34A SOP в производствеN-ChannelMOSFET (Metal Oxide)80V34A (Tc)10V8 mOhm @ 17A, 10V4V @ 500µA35nC @ 10V±20V3000pF @ 40V
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1.6W (Ta), 61W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH4R10ANL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)100V92A (Ta), 70A (Tc)4.5V, 10V4.1 mOhm @ 35A, 10V2.5V @ 1mA75nC @ 10V±20V6.3nF @ 50V
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2.5W (Ta), 67W (Tc)150°CSMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK2Q60D(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 2A PW-MOLD в производствеN-ChannelMOSFET (Metal Oxide)600V2A (Ta)10V4.3 Ohm @ 1A, 10V4.4V @ 1mA7nC @ 10V±30V280pF @ 25V
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60W (Tc)150°C (TJ)Through HolePW-MOLD2TO-251-3 Stub Leads, IPak
TK8A50D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 8A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)500V8A (Ta)10V850 mOhm @ 4A, 10V4V @ 1mA16nC @ 10V±30V800pF @ 25V
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40W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TJ50S06M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 50A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)60V50A (Ta)6V, 10V13.8 mOhm @ 25A, 10V3V @ 1mA124nC @ 10V+10V, -20V6290pF @ 10V
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90W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TJ60S04M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 60A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V60A (Ta)6V, 10V6.3 mOhm @ 30A, 10V3V @ 1mA125nC @ 10V+10V, -20V6510pF @ 10V
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90W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK60S06K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 60A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)60V60A (Ta)6V, 10V8 mOhm @ 30A, 10V3V @ 1mA60nC @ 10V±20V2900pF @ 10V
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88W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK65S04K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 65A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V65A (Ta)6V, 10V4.5 mOhm @ 32.5A, 10V3V @ 1mA63nC @ 10V±20V2800pF @ 10V
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88W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TPC8062-H,LQ(CM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V18A (Ta)4.5V, 10V5.8 mOhm @ 9A, 10V2.3V @ 300µA34nC @ 10V±20V2900pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP8-SOIC (0.173", 4.40mm Width)
TPCA8120,LQ(CM
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 45A 8SOP-ADV в производствеP-ChannelMOSFET (Metal Oxide)30V45A (Ta)4.5V, 10V3 mOhm @ 22.5A, 10V2V @ 1mA190nC @ 10V+20V, -25V7420pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8062-H,LQ(CM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 28A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V28A (Ta)4.5V, 10V5.6 mOhm @ 14A, 10V2.3V @ 300µA34nC @ 10V±20V2900pF @ 10V
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1.6W (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK80S04K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 80A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Ta)6V, 10V3.1 mOhm @ 40A, 10V3V @ 1mA87nC @ 10V±20V4340pF @ 10V
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100W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK80S06K3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 80A DPAK-3 в производствеN-ChannelMOSFET (Metal Oxide)60V80A (Ta)6V, 10V5.5 mOhm @ 40A, 10V3V @ 1mA85nC @ 10V±20V4200pF @ 10V
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100W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK5A45DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 450V 4.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)450V4.5A (Ta)10V1.75 Ohm @ 2.3A, 10V4.4V @ 1mA9nC @ 10V±30V380pF @ 25V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TPCA8057-H,LQ(M
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 42A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V42A (Ta)4.5V, 10V2.6 mOhm @ 21A, 10V2.3V @ 500µA61nC @ 10V±20V5200pF @ 10V
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1.6W (Ta), 57W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8064-H,LQ(CM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 20A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V20A (Ta)4.5V, 10V8.2 mOhm @ 10A, 10V2.3V @ 200µA23nC @ 10V±20V1900pF @ 10V
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1.6W (Ta), 32W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8065-H,LQ(S
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 16A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V16A (Ta)4.5V, 10V11.4 mOhm @ 8A, 10V2.3V @ 200µA20nC @ 10V±20V1600pF @ 10V
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1.6W (Ta), 25W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK6P60W,RVQ
 Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V6.2A (Ta)10V820 mOhm @ 3.1A, 10V3.7V @ 310µA12nC @ 10V±30V390pF @ 300VSuper Junction60W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TJ60S06M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 60A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)60V60A (Ta)6V, 10V11.2 mOhm @ 30A, 10V3V @ 1mA156nC @ 10V+10V, -20V7760pF @ 10V
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100W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TJ80S04M3L(T6L1,NQ
 Toshiba Semiconductor and Storage MOSFET P-CH 40V 80A DPAK-3 в производствеP-ChannelMOSFET (Metal Oxide)40V80A (Ta)6V, 10V5.2 mOhm @ 40A, 10V3V @ 1mA158nC @ 10V+10V, -20V7770pF @ 10V
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100W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK7P60W,RVQ
 Toshiba Semiconductor and Storage MOSFET N CH 600V 7A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V7A (Ta)10V600 mOhm @ 3.5A, 10V3.7V @ 350µA15nC @ 10V±30V490pF @ 300VSuper Junction60W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK25E06K3,S1X(S
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A TO-220AB в производствеN-ChannelMOSFET (Metal Oxide)60V25A (Ta)
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18 mOhm @ 12.5A, 10V
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29nC @ 10V
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60W (Tc)150°C (TJ)Through HoleTO-220-3TO-220-3
TK35E08N1,S1X
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 55A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)80V55A (Tc)10V12.2 mOhm @ 17.5A, 10V4V @ 300µA25nC @ 10V±20V1700pF @ 40V
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72W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
TK10A60D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 10A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V10A (Ta)10V750 mOhm @ 5A, 10V4V @ 1mA25nC @ 10V±30V1350pF @ 25V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK3A60DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V2.5A (Ta)10V2.8 Ohm @ 1.3A, 10V4.4V @ 1mA9nC @ 10V±30V380pF @ 25V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK5A50D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)500V5A (Ta)10V1.5 Ohm @ 2.5A, 10V4.4V @ 1mA11nC @ 10V±30V490pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK6A45DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 450V 5.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)450V5.5A (Ta)10V1.35 Ohm @ 2.8A, 10V4.4V @ 1mA11nC @ 10V±30V490pF @ 25V
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150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK12A50D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 12A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)500V12A (Ta)10V520 mOhm @ 6A, 10V4V @ 1mA25nC @ 10V±30V1350pF @ 25V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK8P60W,RVQ
 Toshiba Semiconductor and Storage MOSFET N CH 600V 8A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V8A (Ta)10V500 mOhm @ 4A, 10V3.7V @ 400µA18.5nC @ 10V±30V570pF @ 300VSuper Junction80W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8055-H,LQ(M
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 56A 8SOP-ADV в производствеN-ChannelMOSFET (Metal Oxide)30V56A (Ta)4.5V, 10V1.9 mOhm @ 28A, 10V2.3V @ 1mA91nC @ 10V±20V7700pF @ 10V
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1.6W (Ta), 70W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK5A53D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 525V 5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)525V5A (Ta)10V1.5 Ohm @ 2.5A, 10V4.4V @ 1mA11nC @ 10V±30V540pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK6A50D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 6A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)500V6A (Ta)10V1.4 Ohm @ 3A, 10V4.4V @ 1mA11nC @ 10V±30V540pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK5A55D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 550V 5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)550V5A (Ta)10V1.7 Ohm @ 2.5A, 10V4.4V @ 1mA11nC @ 10V±30V540pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK7A45DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 450V 6.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)450V6.5A (Ta)10V1.2 Ohm @ 3.3A, 10V4.4V @ 1mA11nC @ 10V±30V540pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK2A65D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 2A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)650V2A (Ta)10V3.26 Ohm @ 1A, 10V4.4V @ 1mA9nC @ 10V±30V380pF @ 25V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK18E10K3,S1X(S
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 18A TO-220AB в производствеN-ChannelMOSFET (Metal Oxide)100V18A (Ta)
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42 mOhm @ 9A, 10V
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33nC @ 10V
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-
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150°C (TJ)Through HoleTO-220-3TO-220-3
TK6A55DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 550V 5.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)550V5.5A (Ta)10V1.48 Ohm @ 2.8A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK6A53D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 525V 6A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)525V6A (Ta)10V1.3 Ohm @ 3A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK7A50D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)500V7A (Ta)10V1.22 Ohm @ 3.5A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK3A65DA(STA4,QM)
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 2.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)650V2.5A (Ta)10V2.51 Ohm @ 1.3A, 10V4.4V @ 1mA11nC @ 10V±30V490pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK5A60D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V5A (Ta)10V1.43 Ohm @ 2.5A, 10V4.4V @ 1mA16nC @ 10V±30V700pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK5A65DA(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 4.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)650V4.5A (Ta)10V1.67 Ohm @ 2.3A, 10V4.4V @ 1mA16nC @ 10V±30V700pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK7A55D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 550V 7A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)550V7A (Ta)10V1.25 Ohm @ 3.5A, 10V4.4V @ 1mA16nC @ 10V±30V700pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK8A45D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 450V 8A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)450V8A (Ta)10V900 mOhm @ 4A, 10V4.4V @ 1mA16nC @ 10V±30V700pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
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