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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8DSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 0.85 mOhm @ 50A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6900pF @ 15V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Ta) | 10V | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.8 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | SMD Поверхностный монтаж | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 240W (Tc) | 150°C (TA) | SMD Поверхностный монтаж | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | ±30V | 720pF @ 10V | - | 144W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A 5DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | Super Junction | 156W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | ±30V | 1470pF @ 10V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 170W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 57A (Ta) | 10V | 40 mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | ±30V | 6250pF @ 300V | - | 360W (Tc) | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520 mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3PL |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 18 mOhm @ 50A, 10V | 3.7V @ 5mA | 360nC @ 10V | ±30V | 15000pF @ 30V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 43A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Ta) | 10V | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 53W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Ta) | 10V | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 52A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.2 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 90A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 126W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 1.7 Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 72A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 72A (Ta) | 10V | 4.3 mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5500pF @ 40V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Ta) | 10V | 840 mOhm @ 4A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 100A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 2.7 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Tc) | 10V | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 72A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Tc) | 10V | 4.5 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO220SIS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3PN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 38 mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
