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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
3N163-E3
 Vishay Siliconix MOSFET P-CH 40V 50MA TO-72 устарелыйP-ChannelMOSFET (Metal Oxide)40V50mA (Ta)20V250 Ohm @ 100µA, 20V5V @ 10µA
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±30V3.5pF @ 15V
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375mW (Ta)-55°C ~ 150°C (TJ)Through HoleTO-72TO-206AF, TO-72-4 Metal Can
3N164
 Vishay Siliconix MOSFET P-CH 30V 50MA TO-206AF устарелыйP-ChannelMOSFET (Metal Oxide)30V50mA (Ta)20V300 Ohm @ 100µA, 20V5V @ 10µA
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±30V3.5pF @ 15V
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375mW (Ta)-55°C ~ 150°C (TJ)Through HoleTO-72TO-206AF, TO-72-4 Metal Can
IRFD113
 Vishay Siliconix MOSFET N-CH 60V 800MA 4-DIP устарелыйN-ChannelMOSFET (Metal Oxide)60V800mA (Tc)10V800 mOhm @ 800mA, 10V4V @ 250µA7nC @ 10V±20V200pF @ 25V
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1W (Tc)-55°C ~ 150°C (TJ)Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
IRFD213
 Vishay Siliconix MOSFET N-CH 250V 450MA 4-DIP устарелыйN-ChannelMOSFET (Metal Oxide)250V450mA (Ta)
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2 Ohm @ 270mA, 10V4V @ 250µA8.2nC @ 10V
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140pF @ 25V
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-55°C ~ 150°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRFD9123
 Vishay Siliconix MOSFET P-CH 100V 1A 4-DIP устарелыйP-ChannelMOSFET (Metal Oxide)100V1A (Ta)
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600 mOhm @ 600mA, 10V4V @ 250µA18nC @ 10V
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390pF @ 25V
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Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
IRFP21N60L
 Vishay Siliconix MOSFET N-CH 600V 21A TO-247AC устарелыйN-ChannelMOSFET (Metal Oxide)600V21A (Tc)10V320 mOhm @ 13A, 10V5V @ 250µA150nC @ 10V±30V4000pF @ 25V
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330W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
IRFP22N60K
 Vishay Siliconix MOSFET N-CH 600V 22A TO-247AC устарелыйN-ChannelMOSFET (Metal Oxide)600V22A (Tc)10V280 mOhm @ 13A, 10V5V @ 250µA150nC @ 10V±30V3570pF @ 25V
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370W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
IRFP26N60L
 Vishay Siliconix MOSFET N-CH 600V 26A TO-247AC устарелыйN-ChannelMOSFET (Metal Oxide)600V26A (Tc)10V250 mOhm @ 16A, 10V5V @ 250µA180nC @ 10V±30V5020pF @ 25V
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470W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
IRFPS38N60L
 Vishay Siliconix MOSFET N-CH 600V 38A SUPER247 устарелыйN-ChannelMOSFET (Metal Oxide)600V38A (Tc)10V150 mOhm @ 23A, 10V5V @ 250µA320nC @ 10V±30V7990pF @ 25V
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540W (Tc)-55°C ~ 150°C (TJ)Through HoleSUPER-247 (TO-274AA)TO-274AA
IRFPS40N60K
 Vishay Siliconix MOSFET N-CH 600V 40A SUPER247 устарелыйN-ChannelMOSFET (Metal Oxide)600V40A (Tc)10V130 mOhm @ 24A, 10V5V @ 250µA330nC @ 10V±30V7970pF @ 25V
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570W (Tc)-55°C ~ 150°C (TJ)Through HoleSUPER-247 (TO-274AA)TO-274AA
SI4752DY-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 25A 8-SO устарелыйN-ChannelMOSFET (Metal Oxide)30V25A (Tc)4.5V, 10V5.5 mOhm @ 10A, 10V2.2V @ 1mA43nC @ 10V±20V1700pF @ 15VSchottky Diode (Body)3W (Ta), 6.25W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SIHB30N60E-E3
 Vishay Siliconix MOSFET N-CH 600V 29A D2PAK устарелыйN-ChannelMOSFET (Metal Oxide)600V29A (Tc)10V125 mOhm @ 15A, 10V4V @ 250µA130nC @ 10V±30V2600pF @ 100V
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250W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHW23N60E-GE3
 Vishay Siliconix MOSFET N-CH 600V 23A TO-247AD в производствеN-ChannelMOSFET (Metal Oxide)600V23A (Tc)10V158 mOhm @ 12A, 10V4V @ 250µA95nC @ 10V±20V2418pF @ 100V
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227W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
SIHW47N65E-GE3
 Vishay Siliconix MOSFET N-CH 650V 47A TO-247AD в производствеN-ChannelMOSFET (Metal Oxide)650V47A (Tc)10V72 mOhm @ 24A, 10V4V @ 250µA273nC @ 10V±20V5682pF @ 100V
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417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
SIR482DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V35A (Tc)4.5V, 10V5.6 mOhm @ 20A, 10V2.3V @ 250µA38nC @ 10V±20V1575pF @ 15V
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5W (Ta), 27.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SIR814DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 устарелыйN-ChannelMOSFET (Metal Oxide)40V60A (Tc)4.5V, 10V2.1 mOhm @ 20A, 10V2.3V @ 250µA86nC @ 10V±20V3800pF @ 20V
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6.25W (Ta), 104W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SIS330DN-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 35A 1212-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V35A (Tc)4.5V, 10V5.6 mOhm @ 10A, 10V2.5V @ 250µA35nC @ 10V±20V1300pF @ 15V
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3.7W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8PowerPAK® 1212-8
SIS334DN-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 20A 1212-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V20A (Tc)4.5V, 10V11.3 mOhm @ 10A, 10V2.4V @ 250µA18nC @ 10V±20V640pF @ 15V
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3.8W (Ta), 50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8PowerPAK® 1212-8
SIS448DN-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 35A 1212-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V35A (Tc)4.5V, 10V5.6 mOhm @ 10A, 10V2.3V @ 250µA38nC @ 10V±20V1575pF @ 15V
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3.7W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8PowerPAK® 1212-8
SUD50N03-06AP-T4E3
 Vishay Siliconix MOSFET N-CH 30V 90A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)30V90A (Tc)4.5V, 10V5.7 mOhm @ 20A, 10V2.4V @ 250µA95nC @ 10V±20V3800pF @ 15V
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10W (Ta), 83W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
SUP53P06-20-GE3
 Vishay Siliconix MOSFET P-CH 60V 9.2A TO220AB устарелыйP-ChannelMOSFET (Metal Oxide)60V9.2A (Ta), 53A (Tc)4.5V, 10V19.5 mOhm @ 30A, 10V3V @ 250µA115nC @ 10V±20V3500pF @ 25V
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3.1W (Ta), 104.2W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
VP0300B-E3
 Vishay Siliconix MOSFET P-CH 30V 0.32A TO-205 устарелыйP-ChannelMOSFET (Metal Oxide)30V320mA (Ta)
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2.5 Ohm @ 1A, 12V4.5V @ 1mA
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150pF @ 15V
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VP0808B
 Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 устарелыйP-ChannelMOSFET (Metal Oxide)80V880mA (Ta)10V5 Ohm @ 1A, 10V4.5V @ 1mA
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±20V150pF @ 25V
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6.25W (Ta)-55°C ~ 150°C (TJ)Through HoleTO-39TO-205AD, TO-39-3 Metal Can
VP0808B-2
 Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 устарелыйP-ChannelMOSFET (Metal Oxide)80V880mA (Ta)10V5 Ohm @ 1A, 10V4.5V @ 1mA
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±20V150pF @ 25V
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6.25W (Ta)-55°C ~ 150°C (TJ)Through HoleTO-39TO-205AD, TO-39-3 Metal Can
VP0808B-E3
 Vishay Siliconix MOSFET P-CH 80V 0.88A TO-205 устарелыйP-ChannelMOSFET (Metal Oxide)80V880mA (Ta)10V5 Ohm @ 1A, 10V4.5V @ 1mA
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±20V150pF @ 25V
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6.25W (Ta)-55°C ~ 150°C (TJ)Through HoleTO-39TO-205AD, TO-39-3 Metal Can
VP1008B
 Vishay Siliconix MOSFET P-CH 100V .79A TO-205 устарелыйP-ChannelMOSFET (Metal Oxide)100V790mA (Ta)10V5 Ohm @ 1A, 10V4.5V @ 1mA
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±20V150pF @ 25V
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6.25W (Ta)-55°C ~ 150°C (TJ)Through HoleTO-39TO-205AD, TO-39-3 Metal Can
VQ1004P
 Vishay Siliconix MOSFET N-CH 60V 0.4A TO-205 устарелый
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5V, 10V
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±20V
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VQ1004P-2
 Vishay Siliconix MOSFET N-CH 60V 0.4A TO-205 устарелый
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5V, 10V
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±20V
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VQ1004P-E3
 Vishay Siliconix MOSFET N-CH 60V 0.4A TO-205 устарелый
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5V, 10V
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±20V
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SUD06N10-225L-GE3
 Vishay Siliconix MOSFET N-CH 100V 6.5A DPAK устарелыйN-ChannelMOSFET (Metal Oxide)100V6.5A (Tc)4.5V, 10V200 mOhm @ 3A, 10V3V @ 250µA4nC @ 5V±20V240pF @ 25V
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1.25W (Ta), 16.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252AATO-252-3, DPak (2 Leads + Tab), SC-63
SIR330DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V35A (Tc)4.5V, 10V5.6 mOhm @ 10A, 10V2.5V @ 250µA35nC @ 10V±20V1300pF @ 15V
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5W (Ta), 27.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SUD42N03-3M9P-GE3
 Vishay Siliconix MOSFET N-CH 30V 42A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)30V42A (Tc)4.5V, 10V3.9 mOhm @ 22A, 10V2.5V @ 250µA100nC @ 10V±20V3535pF @ 15V
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2.5W (Ta), 73.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
SQ2319ES-T1-GE3
 Vishay Siliconix MOSFET P-CH 40V 4.6A TO-236 устарелыйP-ChannelMOSFET (Metal Oxide)40V4.6A (Tc)4.5V, 10V75 mOhm @ 3A, 10V2.5V @ 250µA16nC @ 10V±20V620pF @ 25V
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3W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
VS-FA38SA50LCP
 Vishay Semiconductor Diodes Division MOSFET N-CH 500V 38A SOT-227 устарелыйN-ChannelMOSFET (Metal Oxide)500V38A (Tc)10V130 mOhm @ 23A, 10V4V @ 250µA420nC @ 10V±20V6900pF @ 25V
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500W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
VS-FB180SA10P
 Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 устарелыйN-ChannelMOSFET (Metal Oxide)100V180A (Tc)10V6.5 mOhm @ 180A, 10V4V @ 250µA380nC @ 10V±20V10700pF @ 25V
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480W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
SIR808DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 25V 20A POWERPAK устарелыйN-ChannelMOSFET (Metal Oxide)25V20A (Tc)4.5V, 10V8.9 mOhm @ 17A, 10V2.5V @ 250µA22.8nC @ 10V±20V815pF @ 12.5V
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29.8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SUD45P04-16P-GE3
 Vishay Siliconix MOSFET P-CH 40V 36A TO252 устарелыйP-ChannelMOSFET (Metal Oxide)40V36A (Tc)4.5V, 10V16.2 mOhm @ 14A, 20V2.5V @ 250µA100nC @ 10V±20V2765pF @ 20V
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2.1W (Ta), 41.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252AATO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N02-09P-GE3
 Vishay Siliconix MOSFET N-CH 20V 20A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)20V20A (Ta)4.5V, 10V14 mOhm @ 20A, 10V3V @ 250µA16nC @ 10V±20V1300pF @ 10V
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39.5W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-12P-GE3
 Vishay Siliconix MOSFET N-CH 30V 16.8A TO252 устарелыйN-ChannelMOSFET (Metal Oxide)30V16.8A (Ta)4.5V, 10V17 mOhm @ 20A, 10V3V @ 250µA42nC @ 10V±20V1600pF @ 25V
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39W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
SUM120N04-1M7L-GE3
 Vishay Siliconix MOSFET N-CH 40V 120A D2PAK устарелыйN-ChannelMOSFET (Metal Oxide)40V120A (Tc)4.5V, 10V17 mOhm @ 30A, 10V2.5V @ 250µA285nC @ 10V±20V11685pF @ 20V
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375W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM25P10-138-E3
 Vishay Siliconix MOSFET P-CH 100V 16.7A D2PAK устарелыйN-ChannelMOSFET (Metal Oxide)100V16.7A (Tc)6V, 10V13.8 mOhm @ 6A, 10V4V @ 250µA60nC @ 10V±20V2110pF @ 25V
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3.75W (Ta), 88.2W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM50P10-42-E3
 Vishay Siliconix MOSFET P-CH 100V 36A D2PAK устарелыйN-ChannelMOSFET (Metal Oxide)100V36A (Tc)4.5V, 10V4.2 mOhm @ 14A, 10V3V @ 250µA160nC @ 10V±20V4600pF @ 50V
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18.8W (Ta), 125W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUP25P10-138-GE3
 Vishay Siliconix MOSFET P-CH 100V 16.3A TO220AB устарелыйN-ChannelMOSFET (Metal Oxide)100V16.3A (Tc)6V, 10V13.8 mOhm @ 6A, 10V4V @ 250µA60nC @ 10V±20V2100pF @ 50V
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3.1W (Ta), 73.5W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
SI4128BDY-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V устарелый
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4.5V, 10V
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±25V
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SIR774DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V устарелый
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4.5V, 10V
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±20V
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SIHFR1N60ATR-GE3
 Vishay Siliconix MOSFET N-CH 600V 1.4A TO252AA в производствеN-ChannelMOSFET (Metal Oxide)600V1.4A (Tc)10V7 Ohm @ 840mA, 10V4V @ 250µA14nC @ 10V±30V229pF @ 25V
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36W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD-PAK (TO-252AA)TO-252-3, DPak (2 Leads + Tab), SC-63
SI7792DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V P-PACK SO-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V40.6A (Ta), 60A (Tc)4.5V, 10V2.1 mOhm @ 20A, 10V2.5V @ 250µA135nC @ 10V±20V4.735nF @ 15VSchottky Diode (Body)6.25W (Ta), 104W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SI7794DP-T1-GE3
 Vishay Siliconix MOSFET N-CH 30V P-PACK SO-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V28.6A (Ta), 60A (Tc)4.5V, 10V3.4 mOhm @ 20A, 10V2.5V @ 250µA72nC @ 10V±20V2.52nF @ 15VSchottky Diode (Body)5W (Ta), 48W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® SO-8PowerPAK® SO-8
SIHB22N60S-GE3
 Vishay Siliconix MOSFET N-CH 650V TO263 устарелыйN-ChannelMOSFET (Metal Oxide)600V22A (Tc)10V190 mOhm @ 11A, 10V4V @ 250µA110nC @ 10V±30V2.81nF @ 25V
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250W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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