Nexperia агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - BUK7226-75A,118 PSMN4R0-40YS,115 - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
BUK7226-75A,118	Nexperia USA Inc.	MOSFET N-CH 75V 45A DPAK	устарелый	N-Channel	MOSFET (Metal Oxide)	75V	45A (Tc)	10V	26 mOhm @ 25A, 10V	4V @ 1mA	48nC @ 10V	±20V	2385pF @ 25V	-	158W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN4R0-40YS,115	Nexperia USA Inc.	MOSFET N-CH 40V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4.2 mOhm @ 15A, 10V	4V @ 1mA	38nC @ 10V	±20V	2410pF @ 20V	-	106W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
BUK7675-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 20.3A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	55V	20.3A (Tc)	10V	75 mOhm @ 10A, 10V	4V @ 1mA	-	±20V	483pF @ 25V	-	62W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R9-30MLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 70A LFPAK33	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	70A (Tc)	4.5V, 10V	2.9 mOhm @ 25A, 10V	2.15V @ 1mA	36.1nC @ 10V	±20V	2419pF @ 15V	-	91W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
PSMN035-150B,118	Nexperia USA Inc.	MOSFET N-CH 150V 50A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	150V	50A (Tc)	10V	35 mOhm @ 25A, 10V	4V @ 1mA	79nC @ 10V	±20V	4720pF @ 25V	-	250W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP9NQ20T,127	Nexperia USA Inc.	MOSFET N-CH 200V 8.7A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	200V	8.7A (Tc)	10V	400 mOhm @ 4.5A, 10V	4V @ 1mA	24nC @ 10V	±30V	959pF @ 25V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMK35EP,518	Nexperia USA Inc.	MOSFET P-CH 30V 14.9A 8-SOIC	устарелый	P-Channel	MOSFET (Metal Oxide)	30V	14.9A (Tc)	10V	19 mOhm @ 9.2A, 10V	3V @ 250µA	42nC @ 10V	±25V	2100pF @ 25V	-	6.9W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SO	8-SOIC (0.154", 3.90mm Width)
PMK30EP,518	Nexperia USA Inc.	MOSFET P-CH 30V 14.9A 8-SOIC	устарелый	P-Channel	MOSFET (Metal Oxide)	30V	14.9A (Tc)	10V	19 mOhm @ 9.2A, 10V	3V @ 250µA	50nC @ 10V	±20V	2240pF @ 25V	-	6.9W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN1R4-30YLDX	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.42 mOhm @ 25A, 10V	2.2V @ 1mA	54.8nC @ 10V	±20V	3840pF @ 15V	-	166W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
BUK9Y7R2-60E,115	Nexperia USA Inc.	MOSFET N-CH 60V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	100A (Tc)	5V	5.6 mOhm @ 25A, 10V	2.1V @ 1mA	35nC @ 5V	±10V	5026pF @ 25V	-	167W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
PSMN1R7-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.7 mOhm @ 15A, 10V	2.15V @ 1mA	77.9nC @ 10V	±20V	5057pF @ 12V	-	109W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
PSMN5R2-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK56	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	100A (Tc)	5V, 10V	5.2 mOhm @ 25A, 10V	2.1V @ 1mA	39.4nC @ 5V	±20V	6319pF @ 25V	-	195W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
BUK7604-40A,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4.5 mOhm @ 25A, 10V	4V @ 1mA	117nC @ 10V	±20V	5730pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9230-100B,118	Nexperia USA Inc.	MOSFET N-CH 100V 47A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	47A (Tc)	5V, 10V	28 mOhm @ 25A, 10V	2V @ 1mA	33nC @ 5V	±15V	3805pF @ 25V	-	167W (Tc)	-55°C ~ 185°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7227-100B,118	Nexperia USA Inc.	MOSFET N-CH 100V 48A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	27 mOhm @ 25A, 10V	4V @ 1mA	37nC @ 10V	±20V	2789pF @ 25V	-	167W (Tc)	-55°C ~ 185°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK624R5-30C,118	Nexperia USA Inc.	MOSFET N-CH 30V 90A DPAK	устарелый	N-Channel	MOSFET (Metal Oxide)	30V	90A (Tc)	10V	4.5 mOhm @ 25A, 10V	2.8V @ 1mA	78nC @ 10V	±16V	4707pF @ 25V	-	158W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6207-55C,118	Nexperia USA Inc.	MOSFET N-CH 55V 90A DPAK	устарелый	N-Channel	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	7.8 mOhm @ 25A, 10V	2.8V @ 1mA	82nC @ 10V	±20V	5160pF @ 25V	-	158W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9Y8R5-80EX	Nexperia USA Inc.	MOSFET N-CH 80V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	80V	100A (Tc)	5V	8 mOhm @ 25A, 10V	2.1V @ 1mA	54.7nC @ 5V	±10V	8167pF @ 25V	-	238W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
BUK9520-100B,127	Nexperia USA Inc.	MOSFET N-CH 100V 63A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	100V	63A (Tc)	4.5V, 10V	18.5 mOhm @ 25A, 10V	2V @ 1mA	53.4nC @ 5V	±15V	5657pF @ 25V	-	203W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PH2925U,115	Nexperia USA Inc.	MOSFET N-CH 25V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V	3 mOhm @ 25A, 4.5V	950mV @ 1mA	92nC @ 4.5V	±10V	6150pF @ 10V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
BUK662R5-30C,118	Nexperia USA Inc.	MOSFET N-CH 30V 100A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2.8 mOhm @ 25A, 10V	2.8V @ 1mA	114nC @ 10V	±16V	6960pF @ 25V	-	204W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9E08-55B,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A I2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	55V	75A (Tc)	5V, 10V	7 mOhm @ 25A, 10V	2V @ 1mA	45nC @ 5V	±15V	5280pF @ 25V	-	203W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN1R4-40YLDX	Nexperia USA Inc.	MOSFET N-CH 40V 100A LFPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	1.4 mOhm @ 25A, 10V	2.2V @ 1mA	96nC @ 10V	±20V	6661pF @ 20V	-	238W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	LFPAK56, Power-SO8	SC-100, SOT-669, 4-LFPAK
PSMN063-150D,118	Nexperia USA Inc.	MOSFET N-CH 150V 29A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	150V	29A (Tc)	10V	63 mOhm @ 15A, 10V	4V @ 1mA	55nC @ 10V	±20V	2390pF @ 25V	-	150W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK664R8-75C,118	Nexperia USA Inc.	MOSFET N-CH 75V 120A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	75V	120A (Tc)	4.5V, 10V	5 mOhm @ 25A, 10V	2.8V @ 1mA	177nC @ 10V	±16V	11400pF @ 25V	-	263W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN025-100D,118	Nexperia USA Inc.	MOSFET N-CH 100V 47A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	47A (Tc)	10V	25 mOhm @ 25A, 10V	4V @ 1mA	61nC @ 10V	±20V	2600pF @ 25V	-	150W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7608-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	8 mOhm @ 25A, 10V	4V @ 1mA	-	±20V	4352pF @ 25V	-	254W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK962R8-30B,118	Nexperia USA Inc.	MOSFET N-CH 30V 75A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	30V	75A (Tc)	5V, 10V	2.4 mOhm @ 25A, 10V	2V @ 1mA	89nC @ 5V	±15V	10185pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK661R6-30C,118	Nexperia USA Inc.	MOSFET N-CH 30V 120A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	30V	120A (Tc)	10V	1.6 mOhm @ 25A, 10V	2.8V @ 1mA	229nC @ 10V	±16V	14964pF @ 25V	-	306W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7506-55A,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	6.3 mOhm @ 25A, 10V	4V @ 1mA	-	±20V	6000pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9506-75B,127	Nexperia USA Inc.	MOSFET N-CH 75V 75A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	75V	75A (Tc)	4.5V, 10V	5.5 mOhm @ 25A, 10V	2V @ 1mA	95nC @ 5V	±15V	11693pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK763R1-40B,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	3.1 mOhm @ 25A, 10V	4V @ 1mA	94nC @ 10V	±20V	6808pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK762R7-30B,118	Nexperia USA Inc.	MOSFET N-CH 30V 75A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	2.7 mOhm @ 25A, 10V	4V @ 1mA	91nC @ 10V	±20V	6212pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7905-40AIE,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	5 mOhm @ 50A, 10V	4V @ 1mA	127nC @ 10V	±20V	5000pF @ 25V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
BUK7909-75AIE,127	Nexperia USA Inc.	MOSFET N-CH 75V 75A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	9 mOhm @ 50A, 10V	4V @ 1mA	121nC @ 10V	±20V	4700pF @ 25V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
BUK7908-40AIE,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A TO220AB	устарелый	N-Channel	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	8 mOhm @ 50A, 10V	4V @ 1mA	84nC @ 10V	±20V	3140pF @ 25V	Current Sensing	221W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
BUK761R6-40E,118	Nexperia USA Inc.	MOSFET N-CH 40V 120A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	1.6 mOhm @ 25A, 10V	4V @ 1mA	145nC @ 10V	±20V	11340pF @ 25V	-	349W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN004-60B,118	Nexperia USA Inc.	MOSFET N-CH 60V 75A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	3.6 mOhm @ 25A, 10V	4V @ 1mA	168nC @ 10V	±20V	8300pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R5-30BLEJ	Nexperia USA Inc.	MOSFET N-CH 30V 120A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	1.5 mOhm @ 25A, 10V	2.15V @ 1mA	228nC @ 10V	±20V	14934pF @ 15V	-	401W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7C10-75AITE,118	Nexperia USA Inc.	MOSFET N-CH 75V 75A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	10 mOhm @ 50A, 10V	4V @ 1mA	121nC @ 10V	±20V	4700pF @ 25V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
PSMN070-200B,118	Nexperia USA Inc.	MOSFET N-CH 200V 35A D2PAK	устарелый	N-Channel	MOSFET (Metal Oxide)	200V	35A (Tc)	10V	70 mOhm @ 17A, 10V	4V @ 1mA	77nC @ 10V	±20V	4570pF @ 25V	-	250W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R8-100BS,118	Nexperia USA Inc.	MOSFET N-CH 100V 120A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	3.9 mOhm @ 25A, 10V	4V @ 1mA	170nC @ 10V	±20V	9900pF @ 50V	-	306W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R8-80BS,118	Nexperia USA Inc.	MOSFET N-CH 80V 120A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	3 mOhm @ 25A, 10V	4V @ 1mA	139nC @ 10V	±20V	9961pF @ 40V	-	306W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E13-60E,127	Nexperia USA Inc.	MOSFET N-CH 60V 58A I2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	58A (Tc)	10V	13 mOhm @ 15A, 10V	4V @ 1mA	22.9nC @ 10V	±20V	1730pF @ 25V	-	96W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I²Pak, TO-262AA
PHP18NQ10T,127	Nexperia USA Inc.	MOSFET N-CH 100V 18A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	90 mOhm @ 9A, 10V	4V @ 1mA	21nC @ 10V	±20V	633pF @ 25V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP27NQ11T,127	Nexperia USA Inc.	MOSFET N-CH 110V 27.6A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	110V	27.6A (Tc)	10V	50 mOhm @ 14A, 10V	4V @ 1mA	30nC @ 10V	±20V	1240pF @ 25V	-	107W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP20N06T,127	Nexperia USA Inc.	MOSFET N-CH 55V 20.3A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	55V	20.3A (Tc)	10V	75 mOhm @ 10A, 10V	4V @ 1mA	11nC @ 10V	±20V	483pF @ 25V	-	62W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN2R7-30PL,127	Nexperia USA Inc.	MOSFET N-CH 30V TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.7 mOhm @ 15A, 10V	2.15V @ 1mA	66nC @ 10V	±20V	3954pF @ 12V	-	170W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP33NQ20T,127	Nexperia USA Inc.	MOSFET N-CH 200V 32.7A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	32.7A (Tc)	10V	77 mOhm @ 15A, 10V	4V @ 1mA	32.2nC @ 10V	±20V	1870pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7E3R1-40E,127	Nexperia USA Inc.	MOSFET N-CH 40V 100A I2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	3.1 mOhm @ 25A, 10V	4V @ 1mA	79nC @ 10V	±20V	6200pF @ 25V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I²Pak, TO-262AA

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные