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Nexperia USA Inc. |
MOSFET N-CH 80V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 17 mOhm @ 10A, 10V | 4V @ 1mA | 26nC @ 10V | ±20V | 1573pF @ 40V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.6 mOhm @ 25A, 10V | 4V @ 1mA | 118nC @ 10V | ±20V | 9700pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 77A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 77A (Tc) | 10V | 7.6 mOhm @ 25A, 10V | 4V @ 1mA | 21nC @ 10V | ±20V | 1262pF @ 12V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 150V 28.5A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 28.5A (Tj) | 10V | 65 mOhm @ 18A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1250pF @ 30V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.4 mOhm @ 10A, 10V | 2.15V @ 1mA | 64nC @ 10V | ±20V | 3907pF @ 12V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 5.1 mOhm @ 25A, 10V | 4V @ 1mA | 101nC @ 10V | ±20V | 6793pF @ 40V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 100V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 6686pF @ 50V | - | 269W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2 mOhm @ 25A, 10V | 4V @ 1mA | 175nC @ 10V | ±20V | 11323pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 55V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 2.7 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | ±16V | 15300pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.9 mOhm @ 25A, 10V | 2.8V @ 1mA | 260nC @ 10V | ±16V | 15100pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 7.4 mOhm @ 20A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1730pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 60V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V | 2.5 mOhm @ 25A, 10V | 2.1V @ 1mA | 92nC @ 5V | ±10V | 15600pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 75V 27A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 27A (Tc) | 11V | 50 mOhm @ 14A, 11V | 5V @ 2mA | 19nC @ 10V | ±30V | 810pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 68A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 3195pF @ 50V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8423pF @ 20V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V | 1.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | ±10V | 16400pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 60V 92A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 92A (Tc) | 10V | 7.8 mOhm @ 25A, 10V | 4V @ 1mA | 38.7nC @ 10V | ±20V | 2651pF @ 30V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 200V 20A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 130 mOhm @ 10A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 2470pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.6 mOhm @ 25A, 10V | 4V @ 1mA | 141nC @ 10V | ±20V | 8061pF @ 50V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 60V 100A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.2 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8079pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 30V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.1 mOhm @ 15A, 10V | 2.15V @ 1mA | 117nC @ 10V | ±20V | 6810pF @ 12V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 8.7 mOhm @ 10A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3346pF @ 40V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 42.3nC @ 10V | ±20V | 2683pF @ 12V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 100A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | ±20V | 6230pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.1 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8423pF @ 20V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 47A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 2600pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 100A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 5512pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 228A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 228A (Tc) | 10V | 2.3 mOhm @ 90A, 10V | 2.8V @ 1mA | 253nC @ 10V | ±16V | 16000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Nexperia USA Inc. |
MOSFET N-CH 75V 181A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 181A (Tc) | 10V | 3.4 mOhm @ 90A, 10V | 2.8V @ 1mA | 253nC @ 10V | ±16V | 15800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Nexperia USA Inc. |
MOSFET N-CH 60V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | ±20V | 4426pF @ 30V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8079pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 6.9 mOhm @ 15A, 10V | 4V @ 1mA | 71nC @ 10V | ±20V | 4461pF @ 40V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 89A (Tc) | 10V | 9.6 mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | ±20V | 4454pF @ 50V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 12 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 6686pF @ 50V | - | 269W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 100A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 5512pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.7 mOhm @ 25A, 10V | 2V @ 1mA | 95.6nC @ 5V | ±15V | 7665pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 130A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 4.5V, 10V | 3.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 151nC @ 10V | ±20V | 8533pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V SIL3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 7.8 mOhm @ 25A, 10V | 4V @ 1mA | 128nC @ 10V | ±20V | 7110pF @ 50V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 100A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8079pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 60V SOT78 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | ±20V | 5600pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.8 mOhm @ 25A, 10V | 2.15V @ 1mA | 170nC @ 10V | ±20V | 10180pF @ 12V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 130A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 4.5V, 10V | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | ±20V | 10115pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5 mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 120A I2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.3 mOhm @ 25A, 10V | 2.2V @ 1mA | 243nC @ 10V | ±20V | 14850pF @ 15V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 60V 120A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | ±20V | 9997pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 150A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 150A (Tc) | 10V | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 7629pF @ 25V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 8161pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 120V 70A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 6.7 mOhm @ 25A, 10V | 4V @ 1mA | 207.1nC @ 10V | ±20V | 11384pF @ 60V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.7 mOhm @ 25A, 10V | 2.15V @ 1mA | 212nC @ 10V | ±20V | 12493pF @ 12V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 100A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4.1 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 8400pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
