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Texas Instruments |
MOSFET P-CH 12V 3.5A 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.8V, 4.5V | 76 mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 1.35nC @ 6V | ±8V | 235pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 2.2A (Ta) | 1.5V, 4.5V | 53 mOhm @ 500mA, 4.5V | 900mV @ 250µA | 3.8nC @ 4.5V | -6V | 512pF @ 6V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 12V 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 2.3A (Ta) | 1.8V, 4.5V | 175 mOhm @ 500mA, 4.5V | 1.2V @ 250µA | 1.14nC @ 6V | -8V | 236pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 12V 1.8A PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 1.8A (Ta) | 1.5V, 4.5V | 116 mOhm @ 400mA, 4.5V | 0.95V @ 250µA | 1.23nC @ 4.5V | -6V | 234pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
12V N-CHANNEL FEMTOFET MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 3.6A (Ta) | 1.8V, 4.5V | 76 mOhm @ 400mA, 4.5V | 1.3V @ 250µA | 1.2nC @ 4.5V | 8V | 156pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 20V 22A 6-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 22A (Ta) | 4.5V, 10V | 15 mOhm @ 5A, 10V | 1.9V @ 250µA | 6.7nC @ 10V | ±20V | 419pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-SON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 22A 6SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 29 mOhm @ 5A, 4.5V | 2V @ 250µA | 3.1nC @ 4.5V | ±20V | 468pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-SON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 3.1A 0402 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 1.8V, 4.5V | 109 mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.35nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 2.3A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 8V | 64 mOhm @ 500mA, 8V | 1.2V @ 250µA | 2.7nC @ 4.5V | 10V | 347pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 88 mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.91nC @ 4.5V | -12V | 189pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 8V | 94 mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.42nC @ 4.5V | -12V | 230pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
12V P-CHANNEL FEMTOFET MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 35 mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | -6V | 628pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 5.9A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 27 mOhm @ 900mA, 10V | 1.7V @ 250µA | 5.1nC @ 10V | 20V | 380pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CHANNEL 30V 25A 6WSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 2.5V, 8V | 15.1 mOhm @ 8A, 8V | 1.2V @ 250µA | 6nC @ 4.5V | ±10V | 879pF @ 15V | - | 16W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 65A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 10.8 mOhm @ 11A, 10V | 2.1V @ 250µA | 3.6nC @ 4.5V | ±20V | 530pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 52A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 52A (Tc) | 4.5V, 10V | 11 mOhm @ 10A, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | +16V, -12V | 530pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 56A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 56A (Tc) | 3V, 8V | 7.5 mOhm @ 17A, 8V | 1.8V @ 250µA | 6.6nC @ 4.5V | +10V, -8V | 955pF @ 15V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 5A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 3V, 8V | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.4W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 100A (Tc) | 3V, 8V | 5.1 mOhm @ 20A, 8V | 1.8V @ 250µA | 11.6nC @ 4.5V | +10V, -8V | 1560pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 60A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 8.2 mOhm @ 17A, 10V | 2.3V @ 250µA | 5.6nC @ 4.5V | +16V, -12V | 800pF @ 12.5V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 10.2 mOhm @ 8A, 10V | 1.9V @ 250µA | 15nC @ 10V | ±20V | 998pF @ 15V | - | 3.2W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET P-CH 8V 9DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 9.9 mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6nC @ 4.5V | -6V | 1130pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 9-DSBGA | 9-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 5.2 mOhm @ 20A, 10V | 2.1V @ 250µA | 8.3nC @ 4.5V | ±20V | 1250pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 50A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 3V, 8V | 10.3 mOhm @ 10A, 8V | 1.8V @ 250µA | 5.1nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 50A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 6V, 10V | 13 mOhm @ 12A, 10V | 3.5V @ 250µA | 18nC @ 10V | ±20V | 1480pF @ 30V | - | 3.2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 28A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 3V, 8V | 2.6 mOhm @ 25A, 8V | 1.55V @ 250µA | 25nC @ 4.5V | +10V, -8V | 3480pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 15.1 mOhm @ 10A, 10V | 3.4V @ 250µA | 22nC @ 10V | ±20V | 1680pF @ 50V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.9 mOhm @ 25A, 10V | 1.8V @ 250µA | 17nC @ 4.5V | ±20V | 2630pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 5.9 mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | ±20V | 2750pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 22A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4 mOhm @ 25A, 10V | 3.4V @ 250µA | 64nC @ 10V | ±20V | 5340pF @ 30V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 200A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 4 mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | ±20V | 5070pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 9.5 mOhm @ 40A, 10V | 2.3V @ 250µA | 24nC @ 10V | ±20V | 1880pF @ 30V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 80V 94A TO220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 9.2 mOhm @ 60A, 10V | 3.4V @ 250µA | 36nC @ 10V | ±20V | 2730pF @ 40V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 86A TO220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 10.5 mOhm @ 55A, 10V | 3.4V @ 250µA | 35nC @ 10V | ±20V | 2670pF @ 50V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 80V 100A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 6.6 mOhm @ 60A, 10V | 3.2V @ 250µA | 50nC @ 10V | ±20V | 3980pF @ 40V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 2.4 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 60V 200A TO-220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 1.6 mOhm @ 100A, 10V | 2.2V @ 250µA | 108nC @ 10V | ±20V | 11430pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 80V TO-220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 2.3 mOhm @ 100A, 10V | 3.2V @ 250µA | 156nC @ 10V | ±20V | 12200pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 20V 500MA PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 2.5V, 8V | 1190 mOhm @ 100mA, 8V | 1.35V @ 2.5µA | 0.281nC @ 10V | 10V | 10.5pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V LGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 1.8V, 4.5V | 205 mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.96nC @ 4.5V | -12V | 198pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 12V 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 2.9A (Ta) | 2.5V, 4.5V | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | ±10V | 291pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 60V 2.2A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 2.2A (Ta) | 4.5V, 10V | 65 mOhm @ 1A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 777pF @ 30V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 25V 59A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 8.5 mOhm @ 17A, 10V | 2.3V @ 250µA | 5nC @ 4.5V | +16V, -12V | 740pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 12V 6DSBGA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 2.5V, 4.5V | 10.2 mOhm @ 1.5A, 4.5V | 1.3V @ 250µA | 11.2nC @ 4.5V | ±10V | 1370pF @ 6V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 8V 3A 6DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 3A (Ta) | 1.8V, 4.5V | 19.4 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3nC @ 4.5V | -6V | 914pF @ 4V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 32.5 mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | ±8V | 595pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 30V 87A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 87A (Tc) | 3V, 8V | 7.9 mOhm @ 14A, 8V | 1.7V @ 250µA | 7nC @ 4.5V | +10V, -8V | 950pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 6.9 mOhm @ 10A, 10V | 1.9V @ 250µA | 22.3nC @ 10V | ±20V | 1510pF @ 15V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 2 mOhm @ 25A, 10V | 1.8V @ 250µA | 68nC @ 10V | ±20V | 4430pF @ 15V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 23.5A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 23.5A (Ta), 100A (Tc) | 4.5V, 10V | 3.1 mOhm @ 20A, 10V | 1.9V @ 250µA | 21.5nC @ 4.5V | ±20V | 3252pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
