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Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC |
в производстве | P-Channel | MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 80V 150A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 150A (Ta) | 6V, 10V | 3.8 mOhm @ 100A, 6V | 3.2V @ 250µA | 76nC @ 10V | ±20V | 7820pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 12V 3.6A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 3.6A (Ta) | 1.8V, 4.5V | 76 mOhm @ 400mA, 4.5V | 1.3V @ 250µA | 1.2nC @ 4.5V | 8V | 156pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 2.3A LGA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 8V | 64 mOhm @ 500mA, 8V | 1.2V @ 250µA | 2.7nC @ 4.5V | 10V | 347pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V 1.6A 4DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 2.5V, 4.5V | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | -6V | 478pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 12V 1.6A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 1.6A (Ta) | 2.5V, 4.5V | 17.1 mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8nC @ 4.5V | ±10V | 862pF @ 6V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-DSBGA | 4-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 12V |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 35 mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | -6V | 628pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 12V 7.1A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 7.1A (Ta) | 1.8V, 4.5V | 19 mOhm @ 900mA, 4.5V | 1.2V @ 250µA | 5nC @ 4.5V | 8V | 674pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
30V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 27 mOhm @ 900mA, 10V | 1.7V @ 250µA | 5.1nC @ 10V | 20V | 380pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 8V 7.4A 4-PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 7.4A (Ta) | 1.5V, 4.5V | 9.9 mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5nC @ 4.5V | -6V | 1390pF @ 4V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-PICOSTAR | 4-XFLGA |
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Texas Instruments |
MOSFET N-CH 12V 3.5A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 2.5V, 4.5V | 10.2 mOhm @ 1.5A, 4.5V | 1.3V @ 250µA | 11.2nC @ 4.5V | ±10V | 1370pF @ 6V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Texas Instruments |
20-V P-CHANNEL FEMTOFET MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 76 mOhm @ 400mA, 4.5V | 1.05V @ 250µA | 1.33nC @ 4.5V | -20V | 385pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-LGA (0.73x0.64) | 3-XFLGA |
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Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 6.9 mOhm @ 10A, 10V | 1.9V @ 250µA | 22.3nC @ 10V | ±20V | 1510pF @ 15V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
8V P-CHANNEL FEMTOFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 5.7 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 14.6nC @ 4.5V | -6V | 2275pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 9-DSBGA (1.5x1.5) | 9-UFBGA, DSBGA |
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Texas Instruments |
30V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.4 mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 155°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 8V 7.4A 4-PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 7.4A (Ta) | 1.5V, 4.5V | 9.9 mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5nC @ 4.5V | -6V | 1390pF @ 4V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-PICOSTAR | 4-XFLGA |
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Texas Instruments |
MOSFET P-CH 20V 104A 8VSON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 104A (Tc) | 1.8V, 4.5V | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | ±12V | 2120pF @ 10V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 87A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 8.1 mOhm @ 14A, 10V | 2V @ 250µA | 4.3nC @ 4.5V | ±20V | 695pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CHANNEL 8V 5A 9-DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 5.7 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 14.6nC @ 4.5V | -6V | 2275pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 9-DSBGA (1.5x1.5) | 9-UFBGA, DSBGA |
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Texas Instruments |
30V N-CHANNEL NEXFET POWER MOSFE |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.4 mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CHANNEL 40V 50A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 6.6 mOhm @ 17A, 10V | 2.4V @ 250µA | 9.2nC @ 4.5V | ±20V | 1656pF @ 20V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 3.4 mOhm @ 100A, 10V | 3.4V @ 250µA | 98nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 12V 31A 6DSBGA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 31A (Ta) | 2.5V, 4.5V | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | ±8V | 715pF @ 6V | - | 1.65W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 12V 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 2.9A (Ta) | 2.5V, 4.5V | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | ±10V | 291pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
20V P-CHANNEL FEMTOFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 8V | 35 mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5nC @ 4.5V | -12V | 533pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 60V 2.2A PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 2.2A (Ta) | 4.5V, 10V | 65 mOhm @ 1A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 777pF @ 30V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 20V 500MA PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 2.8V, 8V | 1190 mOhm @ 100mA, 8V | 1.35V @ 2.5µA | 0.281nC @ 10V | 10V | 10.5pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
30V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 2.5V, 8V | 15.1 mOhm @ 8A, 8V | 1.2V @ 250µA | 6nC @ 4.5V | ±10V | 879pF @ 15V | - | 16W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET P-CH 8V 3A 6DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 3A (Ta) | 1.8V, 4.5V | 19.4 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3nC @ 4.5V | -6V | 914pF @ 4V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 20V 3.2A 6DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | -6V | 570pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 32.5 mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | ±8V | 595pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-DSBGA | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 7.3 mOhm @ 10A, 10V | 1.9V @ 250µA | 22.2nC @ 10V | ±20V | 1590pF @ 15V | - | 3.2W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 9.7 mOhm @ 8A, 10V | 2V @ 250µA | 15.1nC @ 10V | ±20V | 1030pF @ 15V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 7.3 mOhm @ 10A, 10V | 1.9V @ 250µA | 22.2nC @ 10V | ±20V | 1590pF @ 15V | - | 3.2W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 4.2 mOhm @ 18A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 3W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
30V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.8 mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
30V N-CHANNEL NEXFET POWER MOSFE |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.8 mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 25V 56A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 10 mOhm @ 10A, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | +16V, -12V | 570pF @ 12.5V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 65A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 8V | 12.2 mOhm @ 11A, 8V | 2V @ 250µA | 3.4nC @ 4.5V | ±10V | 506pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 15.1 mOhm @ 10A, 10V | 3.4V @ 250µA | 22nC @ 10V | ±20V | 1680pF @ 50V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 17A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 60A (Tc) | 4.5V, 10V | 6.2 mOhm @ 15A, 10V | 1.9V @ 250µA | 12nC @ 4.5V | ±20V | 2050pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 2.5V, 8V | 4.7 mOhm @ 20A, 8V | 1.1V @ 250µA | 7.1nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 60A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 60A (Tc) | 3V, 8V | 5.4 mOhm @ 18A, 8V | 1.7V @ 250µA | 10nC @ 4.5V | +10V, -8V | 1440pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
40V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 124A (Tc) | 4.5V, 10V | 5.3 mOhm @ 19A, 10V | 2.4V @ 250µA | 61nC @ 10V | ±20V | 4280pF @ 20V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 3.9 mOhm @ 24A, 10V | 1.9V @ 250µA | 11.7nC @ 4.5V | +16V, -12V | 1780pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 113A 5X6 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 113A (Tc) | 4.5V, 10V | 4.5 mOhm @ 25A, 10V | 2.1V @ 250µA | 8.9nC @ 4.5V | +16V, -12V | 1300pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 72A (Ta), 100A (Tc) | 4.5V, 10V | 6.3 mOhm @ 75A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±20V | 3025pF @ 30V | - | 192W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 25V 97A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 97A (Tc) | 3V, 8V | 5 mOhm @ 20A, 8V | 1.4V @ 250µA | 9.7nC @ 4.5V | +10V, -8V | 1365pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SON | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.8 mOhm @ 20A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | +16V, -12V | 2660pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 15V 1.27A 8-TSSOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 15V | 1.27A (Ta) | 2.7V, 10V | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | +2V, -15V | - | - | 504mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
